IXYS IXGH40N60 Low vce(sat) igbt, high speed igbt Datasheet

Low VCE(sat) IGBT
High speed IGBT
IXGH/IXGM 40 N60
IXGH/IXGM 40 N60A
Symbol
Test Conditions
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
I C25
TC = 25°C, limited by leads
75
A
I C90
TC = 90°C
40
A
I CM
TC = 25°C, 1 ms
150
A
SSOA
(RBSOA)
VGE = 15 V, T VJ = 125°C, RG = 22 Ω
Clamped inductive load, L = 30 µH
ICM = 80
@ 0.8 VCES
A
PC
TC = 25°C
250
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
TJ
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-204 = 18 g, TO-247 = 6 g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
°C
300
VCES
IC25
VCE(sat)
600 V
600 V
75 A
75 A
2.5 V
3.0 V
TO-247 AD (IXGH)
G
C
E
TO-204 AE (IXGM)
C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
International standard packages
2nd generation HDMOSTM process
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Voltage rating guaranteed at high
temperature (125°C)
l
l
l
l
l
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
BVCES
IC
= 250 µA, VGE = 0 V
600
VGE(th)
IC
= 250 µA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
I GES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC90, VGE = 15 V
V
5
V
l
l
l
TJ = 25°C
TJ = 125°C
40N60
40N60A
200
1
µA
mA
±100
nA
2.5
3.0
V
V
l
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power density
l
l
© 1996 IXYS All rights reserved
91513E (3/96)
IXGH 40N60
IXGM 40N60
IXGH 40N60A IXGM 40N60A
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
I C = IC90; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
25
35
S
4500
pF
300
pF
Cres
60
pF
Qg
200
250
nC
45
80
nC
88
120
nC
Cies
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Qgc
Eoff
Inductive load, T J = 25°°C
IC = IC90 , VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 22 Ω
Switching times may increase
for VCE (Clamp) > 0.8 • V CES, 40N60A
higher TJ or increased RG
40N60A
3
mJ
td(on)
Inductive load, TJ = 125°°C
100
ns
IC = IC90, VGE = 15 V,
L = 100 µH
200
ns
4
mJ
td(on)
tri
td(off)
tfi
tri
Eon
td(off)
tfi
Eoff
VCE = 0.8 VCES ,
RG = R off = 22 Ω
40N60
40N60A
Remarks: Switching times
may increase for VCE
(Clamp) > 0.8 • VCES , higher 40N60
TJ or increased R G
40N60A
100
ns
200
ns
600
ns
200
ns
600
1000
ns
600
300
2000
800
ns
ns
12
6
RthCK
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
mJ
mJ
0.5 K/W
RthJC
TO-247 AD Outline
0.25
TO-204AE Outline
K/W
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGH 40N60
IXGM 40N60
IXGH 40N60A IXGM 40N60A
Fig. 1 Saturation Characteristics
Fig. 2 Output Characterstics
350
80
VGE = 15V
T J = 25°C
70
300
IC - Amperes
IC - Amperes
60
VGE = 15V
50
13V
11V
9V
7V
5V
40
30
20
13V
11V
9V
250
200
150
7V
100
50
10
0
5V
0
0
1
2
3
4
5
0
2
4
6
VCE - Volts
10 12 14 16 18 20
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
10
T J = 25°C
9
1.4
VCE(sat) - Normalized
8
7
VCE - Volts
8
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
6
5
4
3
IC = 40A
2
1
4
5
6
7
8
IC = 80A
1.3
1.2
1.1
IC = 40A
1.0
0.9
IC = 20A
0.8
IC = 20A
0
0.7
-50
9 10 11 12 13 14 15
-25
0
VGE - Volts
25
50
75
100 125 150
TJ - Degrees C
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
1.2
80
VCE = 100V
VGE(th) @ 250µA
BV / VCE(sat) - Normalized
70
60
IC - Amperes
T J = 25°C
50
40
30
20
TJ = 25°C
10
1.1
1.0
0.9
BVCES @ 3mA
0.8
0.7
0.6
T J = 125°C
0
0
1
2
3
4
5
6
VGE - Volts
© 1996 IXYS All rights reserved
7
8
9
10
0.5
-50
-25
0
25
50
75
TJ - Degrees C
100 125 150
IXGH 40N60
IXGM 40N60
IXGH 40N60A IXGM 40N60A
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
100
15
IC = 40A
dV/dt < 3V/ns
10
IC - Amperes
VGE - Volts
T J = 125°C
V CE = 500V
12
9
6
1
0.1
3
0
0.01
0
50
100
150
200
250
0
100
200
Total Gate Charge - (nC)
300
400
500
600
700
VCE - Volts
Fig.9 Capacitance Curves
4500
Cies
Capacitance - pF
4000
3500
3000
2500
2000
1500
Coes
1000
Cres
500
0
0
5
10
15
20
25
VCE - Volts
Fig.10 Transient Thermal Impedance
1
Zthjc (K/W)
D=0.5
0.1 D=0.2
D=0.1
D=0.05
D=0.02
D = Duty Cycle
0.01 D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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