Renesas CR12AM Mitsubishi semiconductor thyristor Datasheet

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
CR12AM
Dimensions
in mm
3.2±0.2
4.5
1.3
4
7.0
16 MAX
10.5 MAX
∗
TYPE
NAME
VOLTAGE
CLASS
φ3.6±0.2
12.5 MIN
3.8 MAX
1.0
0.8
2.5
0.5
2.6
4.5
2.5
∗
123
24
3
• IT (AV) ......................................................................... 12A
• VDRM ..............................................................400V/600V
• IGT ..........................................................................30mA
1
1
2
3
4
Measurement point of
case temperature
CATHODE
ANODE
GATE
ANODE
TO-220
APPLICATION
Switching mode power supply, ECR, motor control
MAXIMUM RATINGS
Symbol
Voltage class
Parameter
8
12
Unit
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
720
V
VR (DC)
DC reverse voltage
320
480
V
VDRM
Repetitive peak off-state voltage
400
600
V
VD (DC)
DC off-state
320
480
V
Ratings
Unit
18.8
A
Commercial frequency, sine half wave, 180° conduction, Tc =91°C
12.0
A
Surge on-state current
60Hz sine half wave 1 full cycle, peak value, non-repetitive
360
A
I2t
I2t
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
544
A2s
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Symbol
Conditions
Parameter
IT (RMS)
RMS on-state current
IT (AV)
Average on-state current
ITSM
for fusing
5
W
0.5
W
Peak gate forward voltage
6
V
VRGM
Peak gate reverse voltage
10
V
IFGM
Peak gate forward current
2
Tj
Junction temperature
Storage temperature
Tstg
—
Weight
Typical value
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Limits
Test conditions
Min.
Typ.
Max.
Unit
IRRM
Repetitive peak reverse current
Tj=125°C, V RRM applied
—
—
2.0
mA
IDRM
Repetitive peak off-state current
Tj=125°C, V DRM applied
—
—
2.0
mA
VTM
On-state voltage
Tc=25°C, ITM =40A,
—
—
1.6
V
VGT
Gate trigger voltage
Tj=25°C, VD=6V, IT=1A
—
—
1.5
V
VGD
Gate non-trigger voltage
Tj=125°C, VD=1/2VDRM
0.2
—
—
V
IGT
Gate trigger current
Tj=25°C, VD=6V, IT=1A
—
—
30
mA
IH
Holding current
Tj=25°C, VD=12V
—
15
—
mA
R th (j-c)
Thermal resistance
Junction to case ✽1
—
—
1.2
°C/W
✽1. The contact thermal resistance R th (c-f) is 1.0°C/W with greased.
MAXIMUM ON-STATE CHARACTERISTICS
103
7 Tc = 25°C
5
3
2
102
7
5
3
2
101
7
5
3
2
100
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
400
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
PERFORMANCE CURVES
360
320
280
240
200
160
120
80
40
0
100
2 3 4 5 7 101
2 3 4 5 7 102
CONDUCTION TIME
(CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
PGM = 5W
PG(AV)
= 0.5W
VGT = 1.5V
100
7
5
3
2
IFGM
= 2A
IGT = 30mA
10–1
VGD = 0.2V
7
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
103
7 TYPICAL EXAMPLE
5
3
2
102
7
5
3
2
101
7
5
3
2
100
–40 –20 0 20 40 60 80 100 120 140 160
GATE CURRENT (mA)
JUNCTION TEMPERATURE (°C)
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
1.6
GATE TRIGGER VOLTAGE (V)
GATE TRIGGER CURRENT (Tj = t°C)
GATE TRIGGER CURRENT (Tj = 25°C)
VFGM = 6V
101
7
5
3
2
1.4
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
,,,,,,,,,,,,,,
1.2
DISTRIBUTION
1.0
TYPICAL EXAMPLE
0.8
0.6
0.4
0.2
0
–40 –20
0
20
40
60
80 100 120
TRANSIENT THERMAL IMPEDANCE (°C/W)
GATE VOLTAGE (V)
3
2
100 (%)
GATE CHARACTERISTICS
101
7
5
3
2
100
7
5
3
2
10–1
7
5
3
2
10–2
10–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1
TIME (s)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
64
56
θ
CASE TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
JUNCTION TEMPERATURE (°C)
360°
180°
120°
RESISTIVE,
90°
40 INDUCTIVE
60°
LOADS
32
48
θ = 30°
24
16
8
0
0
4
8
12
16
20
24
28
32
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
RESISTIVE,
INDUCTIVE
140
θ
LOADS
360°
120
100
80
θ = 30°
60
90°
60°
180°
120°
40
20
0
0
2
4
6
8
10
12
14
16
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12AM
MEDIUM POWER USE
AMBIENT TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
160
140
θ
360°
120
180°
RESISTIVE,
120° INDUCTIVE
LOADS
NATURAL
CONVECTION
100
80
60
θ = 30°
40
60°
90°
20
0
0
AVERAGE POWER DISSIPATION (W)
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
64
56
360°
100
RESISTIVE
LOADS
80
θ = 30°
60
90°
180°
60° 120°
40
20
0
0
4
8
12
16
20
24
28
16
θ
0
θ
360°
8
0
4
8
12
RESISTIVE LOADS
16 20 24 28 32
140
θ
120
360°
80
θ
RESISTIVE
120° LOADS
NATURAL
CONVECTION
60
θ = 30°
40
60°
20
0
32
180°
100
AVERAGE ON-STATE CURRENT (A)
90°
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(RECTANGULAR WAVE)
64
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
56
θ
140
48
360°
CASE TEMPERATURE (°C)
AVERAGE POWER DISSIPATION (W)
θ = 30°
24
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
AMBIENT TEMPERATURE (°C)
CASE TEMPERATURE (°C)
120
θ
60°
32
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
160
θ
90°
40
AVERAGE ON-STATE CURRENT (A)
140
180°
120°
48
RESISTIVE,
INDUCTIVE
LOADS
40
32
24
θ = 30°
180° 270°
120°
DC
90°
60°
16
8
0
0
4
8
12
16
20
24
28
32
AVERAGE ON-STATE CURRENT (A)
θ
360°
120
RESISTIVE,
INDUCTIVE
LOADS
100
80
60
θ = 30° 90° 180°
40
DC
60° 120° 270°
20
0
0
4
8
12
16
20
24
28
32
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12AM
MEDIUM POWER USE
DC
80
270°
60
180°
θ = 30°
40
60°
90°
120°
20
0
0
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
100 (%)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(RECTANGULAR WAVE)
160
RESISTIVE,
INDUCTIVE
140
LOADS
θ
NATURAL
120
360°
CONVECTION
100
200
180
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
80
#
60
40
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
HOLDING CURRENT (mA)
BREAKOVER VOLTAGE (dv/dt = vV/µs )
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
100 (%)
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
160
Tj = 125°C
TYPICAL
140
EXAMPLE
120
IGT (25°C)
# 10.1mA
100
20
103
7
5
3
2
102
7
5
3
2
101
7
5
3
2
RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)
Ta = 25°C
VD = 100V
RL = 12Ω
TYPICAL
EXAMPLE
IGT (25°C)
# 11.2mA
TURN-ON TIME (µs)
9.0
8.0
7.0
6.0
5.0
4.0
3.0
#
2.0
1.0
0
0 10 20 30 40 50 60 70 80 90 100
GATE CURRENT (mA)
#2
#1
100 (%)
JUNCTION TEMPERATURE (°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj=t°C)
REPETITIVE PEAK REVERSE VOLTAGE (Tj=25°C)
10.0
TYPICAL EXAMPLE
IGT (25°C)
# 1 10.6mA
# 2 11.6mA
100
–40 –20 0 20 40 60 80 100 120 140 160
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
TURN-ON TIME VS. GATE CURRENT
TYPICAL EXAMPLE
160
BREAKOVER VOLTAGE (T j = t°C)
BREAKOVER VOLTAGE (T j = 25°C )
AMBIENT TEMPERATURE (°C)
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
REPETITIVE PEAK REVERSE VOLTAGE VS.
JUNCTION TEMPERATURE
200
TYPICAL EXAMPLE
180
160
140
120
100
80
60
40
20
0
–40 –20 0 20 40 60 80 100 120 140 160
JUNCTION TEMPERATURE (°C)
Feb.1999
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12AM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT (tw)
GATE TRIGGER CURRENT (DC)
100 (%)
GATE TRIGGER CURRENT VS.
GATE CURRENT PULSE WIDTH
104
7 TYPICAL EXAMPLE
5
3
2
tw
0.1s
103
7
5
3
2
102
7
5
3
2
101
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
GATE CURRENT PULSE WIDTH (µs)
Feb.1999
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