TIP140F/141F/142F TIP140F/141F/142F Monolithic Construction With Built In BaseEmitter Shunt Resistors • Complement to TIP145F/146F/147F • High DC Current Gain : hFE = 1000 @ VCE = 4V, IC = 5A (Min.) • Industrial Use TO-3PF 1 1.Base NPN Epitaxial Darlington Transistor 2.Collector Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage VCEO Collector-Emitter Voltage : TIP140F : TIP141F : TIP142F : TIP140F : TIP141F : TIP142F Value 60 80 100 Units V V V 60 80 100 V V V VEBO Emitter-Base Voltage 5 V IC Collector Current (DC) 10 A ICP Collector Current (Pulse) 15 A IB Base Current (DC) 0.5 A PC Collector Dissipation (TC=25°C) 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 65 ~ 150 °C 3.Emitter Equivalent Circuit C B R1 R2 R1 ≅ 8kΩ R 2 ≅ 0.12 k Ω E Electrical Characteristics TC=25°C unless otherwise noted Symbol VCEO(sus) ICEO ICBO Parameter Collector-Emitter Sustaining Voltage : TIP140F : TIP141F : TIP142F Test Condition IC = 30mA, IB = 0 Min. Typ. Max. 60 80 100 Units V V V Collector Cut-off Current : TIP140F : TIP141F : TIP142F VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 2 2 2 mA mA mA : TIP140F : TIP141F : TIP142F VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 1 1 1 mA mA mA 2 mA Collector Cut-off Current IEBO Emitter Cut-off Current VBE = 5V, IC = 0 hFE DC Current Gain VCE = 4V, IC = 5A VCE = 4V, IC = 10A VCE(sat) Collector-Emitter Saturation Voltage IC = 5A, IB = 10mA IC = 10A, IB = 40mA 2 3 V V V 1000 500 VBE(sat) Base-Emitter Saturation Voltage IC = 10A, IB = 40mA 3.5 VBE(on) Base-Emitter On Voltage VCE = 4V, IC = 10A 3 tD Delay Time tR Rise Time tSTG Storage Time VCC = 30V, IC = 5A IB 1= 20mA, IB2 = -20mA RL = 6Ω tF Fall Time ©2002 Fairchild Semiconductor Corporation V 0.15 µs 0.55 µs 2.5 µs 2.5 µs Rev. B1, December 2002 TIP140F/141F/142F Typical Characteristics 10 IB = 2000uA IB= IB = 1800uA 8 IB = 1600uA 7 IB = 1400uA 100k uA 1200 00uA = 10 IB = 800uA IB VCE = 4V IB = 600uA hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT 9 IB = 400uA 6 5 4 IB = 200uA 3 2 10k 1k 100 1 0 0 1 2 3 4 10 0.1 5 1 Figure 1. Static Characteristics VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 2. DC current Gain 1000 10 f=0.1MHz Cob[pF], CAPACITANCE IC=500IB VBE(sat) 1 VCE(sat) 0.1 100 10 0.01 0.1 1 10 1 100 IC[A], COLLECTOR CURRENT Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage 100 1000 Figure 4. Collector Output Capacitance 100 PC[W], POWER DISSIPATION 100 10 DC IC[A], COLLECTOR CURRENT 10 VCB[V], COLLECTOR-BASE VOLTAGE 1 TIP140F TIP141F 80 60 40 20 TIP142F 0 0.1 1 10 100 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2002 Fairchild Semiconductor Corporation 1000 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. B1, December 2002 TIP140F/141F/142F Package Dimensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 14.50 ±0.20 0.85 ±0.03 2.00 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, December 2002 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ Bottomless™ FAST® FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ EcoSPARK™ GTO™ E2CMOS™ HiSeC™ EnSigna™ I2C™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2002 Fairchild Semiconductor Corporation Rev. I1