WINNERJOIN MJD112 To-251/to-252-2 plastic-encapsulate transistor Datasheet

RoHS
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
MJD112
TO-251/TO-252-2 Plastic-Encapsulate Transistors
TO-251
TO-252-2
MJD112
TRANSISTOR (NPN)
1. BASE
FEATURES
y Complementary darlington power transistors
dpak for surface mount applications
2. COLLECTOR
3. EMITTER
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
2
A
PC
Collector Power Dissipation
1
W
RθJC
Thermal resistance, junction to case
6.25
℃/W
RθJA
Thermal resistance, junction to Ambient
71.4
℃/W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-55-150
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=1mA,IE=0
100
V
Collector-emitter breakdown voltage
V(BR)CEO
IC =30mA,IB=0
100
V
Emitter-base breakdown voltage
V(BR)EBO
IE=5mA,IC=0
5
V
Collector cut-off current
ICBO
VCB=100V,IE=0
20
µA
Collector-emitter cut-off current
ICEO
VCE=50V,IE=0
20
µA
Emitter cut-off current
IEBO
VEB=5V,IC=0
2
mA
hFE(1)
VCE=3V,IC=500mA
500
hFE(2)
VCE=3V,IC=2A
1000
hFE(3)
VCE=3V,IC=4A
200
VCE(sat)1
IC=2A,IB=8mA
2
V
VCE(sat)2
IC=4A,IB=40mA
3
V
2.8
V
DC current gain
12000
Collector-emitter saturation voltage
Base-emitter voltage
VBE
Transition frequency
fT
Collector output capacitance
Cob
VCE=3V,IC=2A
VCE=10V,IC=0.75A,f=1MHz
VCB=10V,IE=0,f=0.1MHz
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn
25
MHz
100
E-mail:[email protected]
pF
RoHS
MJD112
Typical Characteristics
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn
MJD112
E-mail:[email protected]
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