CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through (SPST) switch. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. 10A 5A 10A1 B C F G RF RF IN 10dB 5dB 10B The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. 5B OUT 10dB 10B1 A D E H Typical on wafer Measurements Gain versus attenuation states It is available in chip form. 0dB state Main Features 5dB state ■ Performances: 6-18GHz ■ 20dBm saturated output power ■ 19 dB gain ■ 3 bit attenuator for 26dB range ■ DC power consumption, 300mA @ 4.5V ■ Chip size: 6.68 x 2.46 x 0.1mm 10dB state Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 6 18 GHz G Small signal gain @ Attenuator state 0dB 19 dB Psat Saturated Output power @ Attenuator state 0dB 20 dBm ATT dyn Attenuator range with 3bit 25 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHA3513-8144 - 23 May 08 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 6-18GHz Digital Variable Amplifier CHA3513 Electrical Characteristics on wafer Tamb = +25°C Vd = Pads B, D, F = 4.5V, Vg = Pads A, C, E tuned for Id = 300mA Symbol Fop Parameter Min Operating frequency range (1) G Typ 6 Max Unit 18 GHz Small signal gain @ Attenuator state 0dB (1) ATT bit ATT dyn 6-17GHz 17 19 dB 17-18GHz 15 16 dB Attenuator bit: State 5dB 4.5 5 6.5 dB State 10 dB 1 9.5 10 12 dB State 10dB 2 9.5 10 12 dB Attenuator range with 3bit 25 dB Small signal gain @ Attenuator state 0dB & switch OFF (1) -35 dB P1dB Output power at 1dB compression @ Attenuator state 0dB (1) 18 dBm Psat Saturated Output power @ Attenuator state 0dB (1) 20 dBm Noise figure @ Attenuator state 0dB 12 dB Input Return Loss all attenuator states -15 -9 dB Output Return Loss all attenuator states & switch ON -15 -9 dB Vd Drain bias DC voltage (Pads B, D, F) 4.5 Id Bias current @ small signal 300 Vc Control voltage for Attenuator bits & SPST switch Is NF RL_IN RL_OUT -5 V 350 mA 0 V (1) These values are representative of on-wafer measurements that are made without bonding wires at the RF ports. Ref. : DSCHA3513-8144 - 23 May 08 2/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Digital Variable Amplifier CHA3513 Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum Drain bias voltage ( Pads B,D,F) +5 V Id Drain bias current with Vd=4.5V 450 mA Vg Gate bias voltage (Pads A,C,E) -2 to +0.4 V Vc Attenuator bits & SPST control voltage -7 to +0.6 V Pin Maximum input power overdrive (2) +20.0 dBm Tch Maximum channel temperature +175 °C Ta Operating temperature range -40 to +70 °C Storage temperature range -55 to +125 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. 3bit VGA Control interface The attenuator states are controlled by 6 voltages. The SPST switch is controlled by 2 voltages. state 0 1 2 3 4 6 7 8 Theoretical attenuation Voltage CONTROL PAD Switch control 10A (V) 10B (V) 5A (V) 5B (V) 10A1 (V) 10B1 (V) G H dB 0 référence 5 10 config.1 15 config.1 15 config.2 10 config.2 25 Isolation -5 -5 0 0 -5 -5 0 -5 0 0 -5 -5 0 0 -5 0 -5 0 -5 0 0 -5 0 -5 0 -5 0 -5 -5 0 -5 0 -5 -5 -5 -5 0 0 0 -5 0 0 0 0 -5 -5 -5 0 -5 -5 -5 -5 -5 -5 -5 0 0 0 0 0 0 0 0 -5 Ref. : DSCHA3513-8144 - 23 May 08 3/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Digital Variable Amplifier CHA3513 Typical on wafer Measurements @ 25°C Bias conditions: Vd = 4.5V, Vg tuned for Id = 300mA 0dB state 5dB state 10dB states Linear Gain versus attenuator states Linear Gain with SPST switch OFF Ref. : DSCHA3513-8144 - 23 May 08 4/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Digital Variable Amplifier CHA3513 Saturated output power @ nominal state dB(S11) versus frequency for all state Attenuator value versus frequency for all states Switch OFF dB(S22) versus frequency for all states Ref. : DSCHA3513-8144 - 23 May 08 Attenuator phase variation versus frequency for all states 5/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Digital Variable Amplifier CHA3513 Typical test fixture Measurements @ 25°C Bias conditions: Vd = 4.5V, Vg tuned for Id = 300mA Linear Gain versus attenuation states 25 20 15 10 5 Gain dB 0 -5 -10 -15 -20 -25 -30 -35 Switch OFF -40 -45 -50 0 2 4 6 8 10 12 14 16 18 20 22 24 26 22 24 26 Frequency GHz Input Return Loss versus attenuation states 0 -5 Input return loss (dB) -10 -15 -20 -25 -30 -35 -40 -45 -50 0 2 4 6 8 10 12 14 16 18 20 Frequency GHz Ref. : DSCHA3513-8144 - 23 May 08 6/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Digital Variable Amplifier CHA3513 Output Return Loss versus attenuation states 0 Switch OFF -5 Output return loss( dB) -10 -15 -20 -25 -30 0 2 4 6 8 10 12 14 16 18 20 22 24 Frequency GHz Ref. : DSCHA3513-8144 - 23 May 08 7/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 26 6-18GHz Digital Variable Amplifier CHA3513 Chip Assembly and Mechanical Data To Vd DC Drain Supply 100nF 10nF 120pF 10A 5A 10A1 120pF B C F H 10B 5B 10B1 A D 120pF E G Note: Supply feed should be capacitively bypassed. 25µm diameter gold wire is to be prefered. Recommended circuit bonding table Label 10A, 10B 5A, 5B 10A1, 10B1 B D F A C E H G Type Decoupling Comment Vc Vc Vc Vd Vd Vd Vg Vg Vg Vc Vc Not required Not required Not required 120pF / 10nF 120pF / 10nF 120pF / 10nF Not required Not required Not required Not required Not required First 10dB pad control 5dB pad control Second 10dB pad control Drain Supply Drain Supply Drain Supply Gate Supply Gate Supply Gate Supply Switch control Switch control Ref. : DSCHA3513-8144 - 23 May 08 8/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Digital Variable Amplifier CHA3513 Bonding pad positions (Chip thickness: 100µm) Ref. : DSCHA3513-8144 - 23 May 08 9/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 6-18GHz Digital Variable Amplifier CHA3513 Ordering Information Chip form : CHA3513-99F/00 Elettronica S.p.A has the intellectual property of this MMIC and gives to United Monolithic Semiconductors S.A.S. non-exclusive license to sell it. Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA3513-8144 - 23 May 08 10/10 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice