SAVANTIC BD939F Silicon npn power transistor Datasheet

SavantIC Semiconductor
Product Specification
BD939F
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·For power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-220F) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
120
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
3
A
ICM
Collector current-Peak
6
A
PC
Collector dissipation
14
W
Tj
Junction temperature
150
Tstg
Storage temperature
-50~150
TC=25
SavantIC Semiconductor
Product Specification
BD939F
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA; IB=0
100
V
V(BR)EBO
Emitter-base breakdown voltage
IE=1mA; IC=0
7
V
VCEsat
Collector-emitter saturation voltage
IC=1A; IB=0.2A
0.7
V
VBEsat
Base-emitter saturation voltage
IC=1A; IB=0.2A
1.5
V
ICBO
Collector cut-off current
VCB=120V; IE=0
50
µA
IEBO
Emitter cut-off current
VEB=7V; IC=0
50
µA
hFE-1
DC current gain
IC=0.2A ; VCE=4V
40
hFE-2
DC current gain
IC=1A ; VCE=4V
15
Transition frequency
IC=0.25A ; VCE=10V
3
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
250
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
BD939F
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