FJPF13007 FJPF13007 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector- Base Voltage Parameter Value 700 Units V V CEO Collector- Emitter Voltage VEBO Emitter- Base Voltage 400 V 9 IC Collector Current (DC) 8 V A ICP Collector Current (Pulse) 16 A IB Base Current PC Collector Dissipation (TC=25°C) TJ TSTG 4 A 40 W Junction Temperature 150 °C Storage Temperature - 65 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Base Breakdown Voltage Test Condition IC = 10mA, IB = 0 Min. 400 Typ. Max. Units V IEBO Emitter Cut-off Current VEB = 9V, IC = 0 hFE DC Current Gain VCE = 5V, IC = 2A VCE = 5V, IC = 5A 1 mA VCE(sat) Collector-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A IC = 8A, IB = 2A 1 2 3 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 2A, IB = 0.4A IC = 5A, IB = 1A 1.2 1.6 V V Cob Output Capacitance VCB = 10V , f = 0.1MHz fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A tON Turn On Time tSTG Storage Time tF Fall Time VCC =125V, IC = 5A IB1 = - IB2 = 1A RL = 50Ω 8 5 60 30 110 pF 4 MHz 1.6 µs 3 µs 0.7 µs * Pulse Test: PW≤300µs, Duty Cycle≤2% hFE Classification Classification R(H1) O(H2) hFE1 15 ~ 28 26 ~ 39 ©2004 Fairchild Semiconductor Corporation Rev. B, July 2004 FJPF13007 VBE(sat), VCE(sat)[V], SATURATION VOLTAGE Typical Characteristics 100 hFE, DC CURRENT GAIN VCE = 5V 10 1 0.1 1 10 10 IC = 3 IB 1 VBE(sat) VCE(sat) 0.1 0.01 0.1 1 IC[A], COLLECTOR CURRENT Figure 1. DC current Gain 1000 tR, tD [ns], TURN ON TIME Cob[pF], CAPACITANCE 100 Figure 2. Saturation Voltage 1000 100 10 tR 100 tD, VBE(off)=5V VCC=125V IC=5IB 1 0.1 1 10 100 10 0.1 1000 1 VCB[V], COLLECTOR-BASE VOLTAGE 10 IC[A], COLLECTOR CURRENT Figure 3. Collector Output Capacitance Figure 4. Turn On Time 100 10000 VCC=125V IC=5IB IC[A], COLLECTOR CURRENT tSTG, tF [ns], TURN OFF TIME 10 IC[A], COLLECTOR CURRENT tSTG 1000 100 tF 10 0.1 1 IC[A], COLLECTOR CURRENT Figure 5. Turn Off Time ©2004 Fairchild Semiconductor Corporation 10 10µs 10 1ms DC 100µs 1 0.1 0.01 1 10 100 1000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 6. Forward Biased Safe Operating Area Rev. B, July 2004 FJPF13007 Typical Characteristics (Continued) 60 Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1 0.1 0.01 10 50 PC[W], POWER DISSIPATION IC[A], COLLECTOR CURRENT 100 40 30 20 10 0 100 1000 10000 VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Reverse Biased Safe Operating Area ©2004 Fairchild Semiconductor Corporation 0 25 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 8. Power Derating Rev. B, July 2004 FJPF13007 Package Dimensions 3.30 ±0.10 TO-220F 10.16 ±0.20 2.54 ±0.20 ø3.18 ±0.10 (7.00) (1.00x45°) 15.87 ±0.20 15.80 ±0.20 6.68 ±0.20 (0.70) 0.80 ±0.10 ) 0° (3 9.75 ±0.30 MAX1.47 #1 +0.10 0.50 –0.05 2.54TYP [2.54 ±0.20] 2.76 ±0.20 2.54TYP [2.54 ±0.20] 9.40 ±0.20 4.70 ±0.20 0.35 ±0.10 Dimensions in Millimeters ©2004 Fairchild Semiconductor Corporation Rev. B, July 2004 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FPS™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ Across the board. Around the world.™ The Power Franchise® Programmable Active Droop™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerSaver™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ µSerDes™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2004 Fairchild Semiconductor Corporation Rev. I11