Sirectifier MUR3020 Ultra fast recovery diode Datasheet

MUR3020, MUR3030
Ultra Fast Recovery Diodes
Dimensions TO-247AC
A
C(TAB)
C
A
C
A=Anode, C=Cathode, TAB=Cathode
VRSM
V
200
300
MUR3020
MUR3030
Symbol
VRRM
V
200
300
Test Conditions
Dim.
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
Maximum Ratings
Unit
IFRMS
IFAVM
TC=145oC; rectangular, d=0.5
70
30
A
IFSM
TVJ=45oC; tp=10ms (50Hz), sine
300
A
1.2
mJ
0.3
A
EAS
IAR
o
TVJ=25 C; non-repetitive; IAS=3A; L=180uH
VA=1.5.VR typ.; f=10kHz; repetitive
-55...+175
175
-55...+150
TVJ
TVJM
Tstg
Ptot
TC=25oC
Md
mounting torque
Weight
typical
o
C
165
W
0.8...1.2
Nm
6
g
MUR3020, MUR3030
Ultra Fast Recovery Diodes
Symbol
Test Conditions
Characteristic Values
typ.
max.
Unit
IR
TVJ=25oC; VR=VRRM
TVJ=150oC; VR=VRRM
250
1
uA
mA
VF
IF=30A; TVJ=150oC
TVJ=25oC
0.91
1.25
V
RthJC
RthCH
trr
IRM
0.9
0.25
IF=1A; -di/dt=200A/us; VR=30V; TVJ=25oC
30
o
VR=100V; IF=50A; -diF/dt=100A/us; TVJ=100 C
K/W
ns
7
A
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
* Planar passivated chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Soft recovery behaviour
* Antiparallel diode for high frequency
switching devices
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Inductive heating
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
* Avalanche voltage rated for reliable
operation
* Soft reverse recovery for low
EMI/RFI
* Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
MUR3020, MUR3030
Ultra Fast Recovery Diodes
60
800
30
TVJ = 100°C
nC
A
40
VR = 150V
25
600
IF
TVJ = 100°C
A
VR = 150V
IRM
Qr
20
IF = 60A
TVJ=150°C
IF = 60A
IF = 30A
IF = 30A
400
TVJ=100°C
IF = 15A
15
IF = 15A
TVJ= 25°C
20
10
200
5
0
0.0
0.5
1.0
VF
V
0
100
1.5
Fig. 1 Forward current IF versus VF
0
A/us 1000
-diF/dt
Fig. 2 Reverse recovery charge Qr
versus -diF/dt
1.4
90
1.2
trr
200
600 A/us
800 1000
-diF/dt
400
Fig. 3 Peak reverse current IRM
versus -diF/dt
14
TVJ = 100°C
ns
0
TVJ = 100°C
V
VR = 150V
80
IF = 30A
VFR
Kf
0.8
70
IRM
IF = 15A
Qr
0.6
0.6
IF = 30A
60
10
0.4
50
0.4
0.2
40
0
40
80
120 °C 160
8
0
TVJ
200
400
600
800 1000
A/us
0
200
400
-diF/dt
Fig. 4 Dynamic parameters Qr, IRM
versus TVJ
Fig. 5 Recovery time trr versus -diF/dt
1
0.0
600 A/us
800 1000
diF/dt
Fig. 6 Peak forward voltage VFR and tfr
versus diF/dt
Constants for ZthJC calculation:
K/W
i
0.1
1
2
3
ZthJC
0.01
0.001
0.0001
0.00001
0.0001
0.001
tfr
VFR
IF = 60A
0.8
us
1.0
tfr
12
1.0
1.2
0.01
s
0.1
t
Fig. 7 Transient thermal resistance junction to case
1
Rthi (K/W)
ti (s)
0.465
0.179
0.256
0.005
0.0003
0.04
Similar pages