ON MUN2114T1G Bias resistor transistor Datasheet

MUN2111T1 Series
Preferred Devices
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The
Bias Resistor Transistor (BRT) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The
use of a BRT can reduce both system cost and board space. The device
is housed in the SC−59 package which is designed for low power
surface mount applications.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Moisture Sensitivity Level: 1
• ESD Rating − Human Body Model: Class 1
ESD Rating − Machine Model: Class B
• The SC−59 package can be soldered using wave or reflow.
The modified gull−winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
• Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
IC
100
mAdc
Symbol
Max
Unit
PD
230 (Note 1)
338 (Note 2)
1.8 (Note 1)
2.7 (Note 2)
mW
Collector Current
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PIN 3
COLLECTOR
(OUTPUT)
R1
PIN 2
BASE
(INPUT)
R2
PIN 1
EMITTER
(GROUND)
3
2
1
SC−59
CASE 318D
PLASTIC
MARKING DIAGRAM
6x M
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
°C/W
Thermal Resistance −
Junction−to−Ambient
RqJA
540 (Note 1)
370 (Note 2)
°C/W
Thermal Resistance −
Junction−to−Lead
RqJL
264 (Note 1)
287 (Note 2)
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150
°C
6x = Specific Device Code*
M = Date Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
DEVICE MARKING INFORMATION
*See device marking table on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 inch Pad.
 Semiconductor Components Industries, LLC, 2005
January, 2005 − Rev. 14
1
Publication Order Number:
MUN2111T1/D
MUN2111T1 Series
DEVICE MARKING AND RESISTOR VALUES
Package
Marking
R1 (K)
R2 (K)
Shipping †
SC−59
6A
10
10
3000 / Tape & Reel
SC−59
(Pb−Free)
6A
10
10
3000 / Tape & Reel
SC−59
6B
22
22
3000 / Tape & Reel
SC−59
(Pb−Free)
6B
22
22
3000 / Tape & Reel
SC−59
6C
47
47
3000 / Tape & Reel
SC−59
(Pb−Free)
6C
47
47
3000 / Tape & Reel
SC−59
6D
10
47
3000 / Tape & Reel
SC−59
(Pb−Free)
6D
10
47
3000 / Tape & Reel
MUN2115T1 (Note 3)
SC−59
6E
10
∞
3000 / Tape & Reel
MUN2116T1 (Note 3)
SC−59
6F
4.7
∞
3000 / Tape & Reel
SC−59
(Pb−Free)
6F
4.7
∞
3000 / Tape & Reel
MUN2130T1 (Note 3)
SC−59
6G
1.0
1.0
3000 / Tape & Reel
MUN2131T1 (Note 3)
SC−59
6H
2.2
2.2
3000 / Tape & Reel
MUN2132T1 (Note 3)
SC−59
6J
4.7
4.7
3000 / Tape & Reel
SC−59
(Pb−Free)
6J
4.7
4.7
3000 / Tape & Reel
MUN2133T1 (Note 3)
SC−59
6K
4.7
47
3000 / Tape & Reel
MUN2134T1 (Note 3)
SC−59
6L
22
47
3000 / Tape & Reel
MUN2136T1
SC−59
6N
100
100
3000 / Tape & Reel
MUN2137T1
SC−59
6P
47
22
3000 / Tape & Reel
MUN2140T1 (Note 3)
SC−59
6T
47
∞
3000 / Tape & Reel
Device
MUN2111T1
MUN2111T1G
MUN2112T1
MUN2112T1G
MUN2113T1
MUN2113T1G
MUN2114T1
MUN2114T1G
MUN2116T1G (Note 3)
MUN2132T1G (Note 3)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
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2
MUN2111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
ICBO
−
−
100
nAdc
ICEO
−
−
500
nAdc
IEBO
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.05
0.13
0.20
mAdc
Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0)
V(BR)CBO
50
−
−
Vdc
Collector−Emitter Breakdown Voltage (Note 4)
(IC = 2.0 mA, IB = 0)
V(BR)CEO
50
−
−
Vdc
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
120
60
100
140
140
250
250
5.0
15
27
140
130
150
140
250
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Characteristic
OFF CHARACTERISTICS
Collector−Base Cutoff Current (VCB = 50 V, IE = 0)
Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
ON CHARACTERISTICS (Note 4)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
Collector−Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2130T1
MUN2136T1
MUN2137T1
MUN2131T1
MUN2116T1
MUN2132T1
MUN2134T1
MUN2140T1
(IC = 10 mA, IB = 5.0 mA)
(IC = 10 mA, IB = 1.0 mA)
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
MUN2111T1
MUN2112T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2113T1
MUN2140T1
MUN2136T1
MUN2137T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW)
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
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3
VCE(sat)
VOL
Vdc
Vdc
MUN2111T1 Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VOH
4.9
−
−
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
70
32.9
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
100
47
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
130
61.1
61.1
kW
0.8
0.17
−
0.8
0.055
0.38
1.7
1.0
0.21
−
1.0
0.1
0.47
2.1
1.2
0.25
−
1.2
0.185
0.56
2.6
ON CHARACTERISTICS (Note 4)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW)
MUN2130T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
MUN2115T1
MUN2116T1
MUN2131T1
MUN2132T1
MUN2140T1
Input Resistor
MUN2111T1
MUN2112T1
MUN2113T1
MUN2114T1
MUN2115T1
MUN2116T1
MUN2130T1
MUN2131T1
MUN2132T1
MUN2133T1
MUN2134T1
MUN2136T1
MUN2137T1
MUN2140T1
Resistor Ratio
MUN2111T1/MUN2112T1/MUN2113T1/
MUN2136T1
MUN2114T1
MUN2115T1/MUN2116T1/MUN2140T1
MUN2130T1/MUN2131T1/MUN2132T1
MUN2133T1
MUN2134T1
MUN2137T1
R1/R2
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%.
+12 V
PD, POWER DISSIPATION (mW)
350
300
250
Typical Application
for PNP BRTs
200
150
100
RqJA= 370°C/W
LOAD
50
0
−50
0
50
100
150
TA, AMBIENT TEMPERATURE (5°C)
Figure 1. Derating Curve
Figure 2. Inexpensive, Unregulated Current Source
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4
MUN2111T1 Series
1000
1
VCE = 10 V
IC/IB = 10
TA = −2°5C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2111T1
25°C
75°C
0.1
0.01
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA = 75°C
100
−25°C
10
80
1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. VCE(sat) vs. IC
100
IC, COLLECTOR CURRENT (mA)
1
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
10
TA = −25°C
1
0.1
VO = 5 V
0.01
0.001
50
25°C
75°C
0
Figure 5. Output Capacitance
6
7
8
2
3
4
5
Vin, INPUT VOLTAGE (VOLTS)
1
VO = 0.2 V
TA = −25°C
10
25°C
75°C
1
0.1
0
10
9
Figure 6. Output Current vs. Input Voltage
100
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
f = 1 MHz
lE = 0 V
TA = 25°C
2
0
100
Figure 4. DC Current Gain
4
3
25°C
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 7. Input Voltage vs. Output Current
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5
50
10
MUN2111T1 Series
1000
10
VCE = 10 V
IC/IB = 10
TA = −25°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2112T1
25°C
1
75°C
0.1
0.01
0
20
40
60
IC, COLLECTOR CURRENT (mA)
TA = 75°C
100
10
80
1
10
Figure 9. DC Current Gain
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
2
1
0
10
TA = −25°C
1
0.1
0.01
VO = 5 V
1
0
Figure 10. Output Capacitance
100
25°C
75°C
0.001
50
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
4
0
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25°C
10
75°C
1
0
9
Figure 11. Output Current vs. Input Voltage
TA = −25°C
0.1
10
0
IC, COLLECTOR CURRENT (mA)
Figure 8. VCE(sat) vs. IC
3
25°C
−25°C
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 12. Input Voltage vs. Output Current
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6
50
10
MUN2111T1 Series
1
1000
IC/IB = 10
TA = −25°C
25°C
75°C
0.1
0.01
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2113T1
0
10
20
30
IC, COLLECTOR CURRENT (mA)
TA = 75°C
25°C
10
40
−25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
Figure 13. VCE(sat) vs. IC
100
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
0.6
0.4
0.2
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
−25°C
0.1
0.01
VO = 5 V
1
2
3
4
5
6
7
8
Vin, INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = −25°C
25°C
10
75°C
1
0
9
Figure 16. Output Current vs. Input Voltage
100
0.1
25°C
1
0.001
0
50
TA = 75°C
10
Figure 15. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1
0.8
100
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 17. Input Voltage vs. Output Current
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7
50
10
MUN2111T1 Series
180
1
IC/IB = 10
25°C
140
0.1
75°C
25°C
−25°C
120
100
0.01
80
60
40
20
0.00
0
1
20
40
60
IC, COLLECTOR CURRENT (mA)
0
80
1
2
4.5
6 8 10 15 20 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
100
3.5
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
lE = 0 V
TA = 25°C
4
3
2.5
2
1.5
1
0.5
0
2
4
6
8
10 15
TA = 75°C
10
VO = 5 V
1
20 25 30 35 40 45 50
25°C
−25°C
0
2
4
Figure 20. Output Capacitance
TA = −25°C
25°C
75°C
1
VO = 0.2 V
0
8
Figure 21. Output Current vs. Input Voltage
10
0.1
6
Vin, INPUT VOLTAGE (VOLTS)
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
0
4
Figure 19. DC Current Gain
Figure 18. VCE(sat) vs. IC
Cob, CAPACITANCE (pF)
TA = 75°C
VCE = 10 V
160
TA = −25°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE
(VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2114T1
10
20
30
40
IC, COLLECTOR CURRENT (mA)
Figure 22. Input Voltage vs. Output Current
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8
50
10
MUN2111T1 Series
1
1000
IC/IB =10
25°C
75°C
0.1
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V)
TYPICAL ELECTRICAL CHARACTERISTICS − MUN2131T1
−25°C
0.01
0
5
10
15
20
25
30
100
25°C
75°C
10
1
35
IC/IB = 10
−25°C
1
10
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 23. VCE(sat) vs. IC
Figure 24. DC Current Gain
10
IC, COLLECTOR CURRENT (mA)
100
f = 1 MHz
IE = 0 A
TA = 25°C
8
6
4
2
0
5
10
15
20
25
30
35
40
45
75°C
10
1
TA = 25°C
0.01
0.01
50 55
−25°C
0
1
2
3
VO = 5 V
4
5
6
7
VR, REVERSE BIAS VOLTAGE (V)
Vin, INPUT VOLTAGE (V)
Figure 25. Output Capacitance
Figure 26. Output Current vs. Input Voltage
10
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
12
0
100
TA = −25°C
75°C
1
25°C
VO = 0.2 V
0.1
0
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 27. Input Voltage vs. Output Current
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9
25
8
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2136T1
1000
75°C
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
0.1
0.01
75°C
25°C
−25°C
1
2
3
4
5
IC, COLLECTOR CURRENT (mA)
6
10
1
7
1
10
IC, COLLECTOR CURRENT (mA)
Figure 28. Maximum Collector Voltage vs.
Collector Current
100
IC, COLLECTOR CURRENT (mA)
1.0
f = 1 MHz
IE = 0 V
TA = 25°C
0.8
0.6
0.4
0.2
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
25°C
TA = −25°C
1
VO = 5 V
0.1
60
0
1
2
3
4
TA = −25°C
VO = 0.2 V
75°C
0
2
6
7
8
9
Figure 31. Output Current vs. Input Voltage
10
1
5
Vin, INPUT VOLTAGE (VOLTS)
100
25°C
75°C
10
Figure 30. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
100
Figure 29. DC Current Gain
1.2
0
25°C
VCE = 10 V
IC/IB = 10
0
TA = −25°C
100
4
6
8
10 12
14
16
IC, COLLECTOR CURRENT (mA)
18
Figure 32. Input Voltage vs. Output Current
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10
20
10
MUN2111T1 Series
TYPICAL ELECTRICAL CHARACTERISTICS — MUN2137T1
1000
hFE, DC CURRENT GAIN
VCE(sat), MAXIMUM COLLECTOR
VOLTAGE (VOLTS)
1
TA = −25°C
75°C
0.1
25°C
0.01
IC/IB = 10
0
5
10 15
20 25 30 35 40
IC, COLLECTOR CURRENT (mA)
45
75°C
25°C
VCE = 10 V
10
50
TA = −25°C
100
1
10
IC, COLLECTOR CURRENT (mA)
Figure 33. Maximum Collector Voltage vs.
Collector Current
Figure 34. DC Current Gain
100
1.0
IC, COLLECTOR CURRENT (mA)
1.2
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
TA = −25°C
10
25°C
1
0.1
0.01
0.001
60
75°C
VO = 5 V
0
1
2
3
4
VO = 0.2 V
1
TA = −25°C
75°C
25°C
0
6
7
8
9
10
Figure 36. Output Current vs. Input Voltage
100
10
5
Vin, INPUT VOLTAGE (VOLTS)
Figure 35. Output Capacitance
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
1.4
f = 1 MHz
IE = 0 V
TA = 25°C
100
5
10
15
20
IC, COLLECTOR CURRENT (mA)
Figure 37. Input Voltage vs. Output Current
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11
25
11
MUN2111T1 Series
PACKAGE DIMENSIONS
SC−59
CASE 318D−04
ISSUE F
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
L
3
S
2
DIM
A
B
C
D
G
H
J
K
L
S
B
1
D
G
J
C
INCHES
MIN
MAX
0.1063 0.1220
0.0512 0.0669
0.0394 0.0511
0.0138 0.0196
0.0670 0.0826
0.0005 0.0040
0.0034 0.0070
0.0079 0.0236
0.0493 0.0649
0.0985 0.1181
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
K
H
MILLIMETERS
MIN
MAX
2.70
3.10
1.30
1.70
1.00
1.30
0.35
0.50
1.70
2.10
0.013
0.100
0.09
0.18
0.20
0.60
1.25
1.65
2.50
3.00
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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