UMS CHE1270-QAG 12-40ghz wide band detector Datasheet

CHE1270-QAG
RoHS COMPLIANT
12-40GHz Wide Band Detector
GaAs Monolithic Microwave IC in SMD leadless package
Description
UMS
E1270
YYWW
The CHE1270-QAG is a detector that
integrates a matched detector diode (Vdet)
and a reference diode (Vref).
It is designed for a wide range of applications
where an accurate transmitted power control
is required, typically commercial
communication systems.
CHE1270
RF IN
Matching
The circuit is manufactured with a Schottky
diode MMIC process, 1µm gate length, via
holes through the substrate and air bridges.
Vdet
It is available in leadless SMD package.
Vref
DC
Transmitted power detection (mV)
Main Features
■ Wide frequency range: 12-40GHz
■ 30dB dynamic range
■ ESD protected
■ 16L-QFN3x3 SMD package
Vdetect= Vref-Vdet (mV)
10000
12 GHz
17GHz
22GHz
32GHz
37GHz
40GHz
27GHz
1000
100
10
1
Main Characteristics
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
Input power (dBm)
Tamb = +25°C, VDC = +4.5V
Symbol
Parameter
Min
Typ
12
Max
Unit
40
GHz
F
Frequency range
Dr
Dynamic range
30
dB
RL
Return Loss
-10
dB
ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions!
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
1/8
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHE1270-QAG
12-40GHz Detector
Electrical Characteristics (1)
Tamb = +25°C, VDC = +4.5V
Symbol
Parameter
Min
F
Frequency range
Dr
Dynamic range (for Input Power detection)
IPd
Input Power detection
Typ
Max
Unit
40
GHz
12
30
-15
Vdetect Voltage detection Vref – Vdet
dB
15
dBm
10
to
2000
mV
Return Loss (12 – 36GHz)
-10
dB
Return Loss (36 – 40GHz)
-8
dB
VDC
Bias Voltage
4.5
V
IDC
Bias Current
70
µA
from IPd_min to IPd_max
RL
(1) These values are representative of onboard measurements as defined on the drawing 96272-B
(page 8) with 27kΩ resistor in parallel on Vdet and Vref pads.
Absolute Maximum Ratings (1)
Tamb = +25°C
Symbol
VDC
P_max
Parameter
Values
Unit
Bias voltage
6
V
Maximum Power
18
dBm
Top
Operating temperature range
-40 to +85
°C
Tstg
Storage temperature range
-55 to +125
°C
(1) Operation of this device above anyone of these parameters may cause permanent damage.
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHE1270-QAG
12-40GHz Detector
Typical Measured Performance
Tamb = +25°C, Vdc = +4.5V, 27k Ω resistor in parallel on Vdet and Vref pads (see notes,
page 7).
- Return Loss measurement in the package access plans (refer to the “definition of the Sij
reference planes” section below).
Return Loss versus frequency
0
-2
-4
-6
Return Loss (dB)
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
2
4
6
8
10 12 14
16
18
20 22 24
26
28
30 32 34
36
38
40 42 44
Freq (GHz)
- Power measurements in the plan of the connectors, using the proposed land pattern &
board 96272-B (see page 8).
Transmitted power detection versus Input power
Vdetect= Vref-Vdet (mV)
10000
12 GHz
17GHz
22GHz
32GHz
37GHz
40GHz
27GHz
1000
100
10
1
-20 -18 -16 -14 -12 -10
-8
-6
-4
-2
0
2
4
6
8
10
12
14
16
Input power (dBm)
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
CHE1270-QAG
12-40GHz Detector
Transmitted power detection versus frequency @ -15dBm Input power
40
Vdetect= Vref-Vdet (mV)
35
30
25
20
15
10
5
0
12
14
16
18
20
22
24
26
28
30
32
34
36
38
40
Freq (GHz)
Transmitted power detection versus frequency @ +15dBm Input power
2000
1900
Vdetect= Vref-Vdet (mV)
1800
1700
1600
1500
1400
1300
1200
1100
1000
12
14
16
18
20
22
24
26
28
Freq (GHz)
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
30
32
34
36
38
40
CHE1270-QAG
12-40GHz Detector
Package outline (1):
E1270
Matt
Free
Units
tin,
Lead
From the standard
(Green)
1-
Nc
9-
Gnd
mm
2-
Gnd
10-
Nc
JEDEC MO-220
3-
RF IN
11-
Gnd
(VEED)
4-
Gnd
12-
Nc
5-
VDET
13-
Nc
6-
DC
14-
Nc
7-
VREF
15-
Nc
8-
Nc
16-
Nc
17- GND
(1)
The package outline drawing included to this data-sheet is given for indication. Refere to the application note
AN0017 available at http://www.ums-gaas.com for exact package dimensions.
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
5/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
CHE1270-QAG
12-40GHz Detector
Definition of the Sij reference planes
The reference planes used for Sij
measurements
given
above
are
symmetrical from the symmetrical axis of
the package (see drawing beside). The
input and output reference planes are
located at 2.65mm offset (input wise and
output wise respectively) from this axis.
Then, the given Sij parameters incorporate
the land pattern of the evaluation
motherboard recommended at the page 8.
Recommanded package footprint
Refere to the application note AN0017 available at http://www.ums-gaas.com for package
foot print recommandations.
SMD mounting procedure
The SMD leadless package has been designed for high volume surface mount PCB
assembly process. The dimensions and footprint required for the PCB (motherboard) are
given in the drawings above.
For the mounting process standard techniques involving solder paste and a suitable reflow
process can be used. For further details, see application note AN0017.
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHE1270-QAG
12-40GHz Detector
Notes
CHE1270
RF IN
Matching
27kΩ
Ω
Vdet
27kΩ
Ω
Vref
DC
Recommended external resistors assembly
27kΩ resistors in parallel with Vdet and Vref pads are recommended to provide the best
behaviour in the whole operating temperature range.
As the voltage detection is the difference between Vref and Vdet, the external resistor value
should be identical on these two ports.
For information, a variation of 3% leads around 1mV variation of detected voltage.
Due to ESD protection circuits on RF input, an external capacitance might be requested to
isolate the product from external voltage that could be present on the RF access.
ESD protections are also implemented on Vdet and Vref accesses.
The DC connection (on DC pad) does not include any decoupling capacitor in package,
therefore it is mandatory to provide a good external DC decoupling on the PC board, as
close as possible to the package.
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
CHE1270-QAG
12-40GHz Detector
Evaluation mother board:
Compatible with the proposed footprint.
Based on typically Ro4003 / 8mils or equivalent.
Using a microstrip to coplanar transition to access the package.
Recommended for the implementation of this product on a module board.
Decoupling capacitors of 10nF ±10% are recommended for all DC accesses.
(See application note AN0017 for details).
(Not used)
Capacitor 10nF
Vref
DC
Vdet
Resistor 27kΩ
Ordering Information
QFN 3x3 RoHS compliant package:
CHE1270-QAG/XY
Stick: XY = 20
Tape & reel: XY = 21
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United Monolithic
Semiconductors S.A.S
Ref. : DSCHE1270-QAG8205 - 25 Jun 08
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Similar pages