ASI MRF460 Npn silicon rf power transistor Datasheet

MRF460
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF460 is Designed for
12.5 Volt Power Amplifier Applications
up to 30 MHz.
FEATURES INCLUDE:
• Omnigold™ Metalization System
• PG = 12 dB Min. @ 30 MHz & 40 W
• Efficiency 40%
PACKAGE STYLE .500" 4L FLANGE
MAXIMUM RATINGS
IC
215 A
VCBO
40 V
VCEO
20 V
VEBO
4.0 V
PDISS
175 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
1.0 °C/W
CHARACTERISTICS
1 = COLLECTOR
2 = BASE
3 & 4 = EMITTER
TC = 25 °C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BVCES
IC = 100 mA
40
V
BVCEO
IC = 100 mA
20
V
BVEBO
IE = 5.0 mA
4.0
V
ICES
VCE = 12.5 V
hFE
VCE = 5.0 V
COB
VCB = 12.5 V
GPE
IMD
ηC
10
IC = 1.0 A
20
f = 1.0 MHz
IC = 4.7 A
--300
12
VCC = 12.5 V
f = 30 MHz
POUT = 40 W (PEP)
45
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
350
15
-35
40
mA
pF
dB
-30
dB
%
REV. A
1/1
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