NTE NTE2902 N-channel silicon junction field effect transistor Datasheet

NTE2902
N-Channel Silicon Junction
Field Effect Transistor
Description:
The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier
applications.
Absolute Maximum Ratings: (Note 1)
Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA
Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +150°C
Note 1. Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress values (not normal operating conditions) and are not
valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
-25
-
-
V
TA = +25°C
-
-
-1.0
nA
TA = +125°C
-
-
-1.0
μA
-2.0
-
-6.5
V
OFF Characteristics
Gate-Source Breakdown Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
V(BR)GSS IG = 1.0μA, VDS = 0
IGSS
VGS(off)
VGS = 15V,
VDS = 0
VDS = 10V, ID = 1nA
ON Characteristics
Zero-Gate Voltage Drain Current
IDSS
VDS = 10V, VGS = 0, Note 2
24
-
60
mA
Gate-Source Forward Voltage
VGS(f)
VDS = 0, IG = 1mA
-
-
1.0
V
Note 2. Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 3%.
Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
f = 100MHz
-
0.5
-
mmhos
f = 100MHz
-
0.25
-
mmhos
gos
f = 1kHz
-
-
250
μmhos
Common-Gate Power Gain
Gpg
f = 100MHz
-
16
-
dB
Common-Source Forward
Transconductance
Re(yfs)
f = 100MHz
-
12
-
mmhos
8000
-
Common-Gate Input Conductance
Re(yig)
-
12
-
mmhos
-
150
-
μmhos
-
150
-
μmhos
VDS = 0, VGS = -10V,
f = 1MHz
-
1.8
2.5
pF
-
4.3
5.0
pF
VDS = 10V, ID = 10mA,
f = 100Hz
-
10
-
nV/√Hz
Small-Signal Characteristics
Common- Source Input Conductance
Re(yis)
Common-Source Output
Conductance
Re(yos)
VDS = 10V,
ID = 10mA
gfs
Common-Gate Forward
Transconductance
gfg
Common-Gate Output Conductance
gog
Gate-Drain Capacitance
Cgd
Gate-Source Capacitance
Cgs
f = 1kHz
f = 100MHz
VDS = 10V, ID = 10mA,
f = 1kHz
18000 μmhos
Functional Characteristics
Equivalent Short-Circuit Input
Noise Voltage
en
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
G S D
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
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