CHAMP CMT04N60XN252 Power mosfet Datasheet

CMT04N60
POWER MOSFET
GENERAL DESCRIPTION
FEATURES
This advanced high voltage MOSFET is designed to ‹
Higher Current Rating
withstand high energy in the avalanche mode and switch ‹
Lower Rds(on)
efficiently. This new high energy device also offers a ‹
Lower Capacitances
drain-to-source diode with fast recovery time. Designed for ‹
Lower Total Gate Charge
high voltage, high speed switching applications such as ‹
Tighter VSD Specifications
power supplies, converters, power motor controls and ‹
Avalanche Energy Specified
bridge circuits.
PIN CONFIGURATION
SYMBOL
Front View
SOURCE
Front View
DRAIN
TO-252
GATE
TO-220/TO-220FP
D
G
S
1
2
3
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
Rating
Drain to Current - Continuous
- Pulsed
Gate-to-Source Voltage - Continue
- Non-repetitive
Total Power Dissipation
Symbol
Value
Unit
ID
4.0
A
IDM
14
VGS
±30
V
VGSM
±40
V
PD
W
TO-220
83
TO-220FP
30
Operating and Storage Temperature Range
Single Pulse Drain-to-Source Avalanche Energy - TJ = 25℃
TJ, TSTG
-55 to 150
℃
EAS
80
mJ
θJC
1.30
℃/W
θJA
100
TL
260
(VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω)
Thermal Resistance - Junction to Case
- Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
℃
Page 1
CMT04N60
POWER MOSFET
ORDERING INFORMATION
Part Number
Package
CMT04N60GN220*
TO-220
CMT04N60XN220*
TO-220
CMT04N60GN220FP*
TO-220 Full Package
CMT04N60XN220FP*
TO-220 Full Package
CMT04N60GN252*
TO-252
CMT04N60XN252*
TO-252
*Note: G : Suffix for Pb Free Product
X : Suffix for Halogen and Pb Free Product
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, TJ = 25℃.)
CMT04N60
Characteristic
Drain-Source Breakdown Voltage
Symbol
Min
V(BR)DSS
600
Typ
Max
Units
V
(VGS = 0 V, ID = 250 μA)
Drain-Source Leakage Current
IDSS
uA
(VDS =600 V, VGS = 0 V)
1
Gate-Source Leakage Current-Forward
IGSSF
100
nA
IGSSR
100
nA
4.0
V
2.2
Ω
(Vgsf = 30 V, VDS = 0 V)
Gate-Source Leakage Current-Reverse
(Vgsr = - 30 V, VDS = 0 V)
Gate Threshold Voltage
VGS(th)
2.0
(VDS = VGS, ID = 250 μA)
Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) *
RDS(on)
Forward Transconductance (VDS = 50 V, ID = 2.0 A) *
gFS
Input Capacitance
Ciss
540
760
Coss
125
180
pF
pF
Crss
8.0
20
pF
td(on)
12
20
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
(VDS = 25 V, VGS = 0 V,
f = 1.0 MHz)
(VDD = 300 V, ID = 4.0 A,
VGS = 10 V,
RG = 9.1Ω) *
(VDS = 480 V, ID = 4.0 A,
VGS = 10 V)*
Internal Drain Inductance
2.5
mhos
tr
7.0
10
ns
ns
td(off)
19
40
ns
tf
10
20
ns
10
Qg
5.0
Qgs
2.7
nC
nC
Qgd
2.0
nC
LD
4.5
nH
LS
7.5
nH
(Measured from the drain lead 0.25” from package to center of die)
Internal Drain Inductance (Measured from the source lead 0.25” from
package to source bond pad)
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Turn-On Time
Reverse Recovery Time
(IS = 4.0 A,
dIS/dt = 100A/μs)
VSD
1.5
V
ton
**
ns
trr
655
ns
* Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2%
** Negligible, Dominated by circuit inductance
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
Page 2
CMT04N60
POWER MOSFET
TYPICAL CHARACTERISTICS
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
Page 3
CMT04N60
POWER MOSFET
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
Page 4
CMT04N60
POWER MOSFET
TO-220
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
Page 5
CMT04N60
POWER MOSFET
PACKAGE DIMENSION
TO-220
TO-220FP
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
Page 6
CMT04N60
POWER MOSFET
TO-252
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
Page 7
CMT04N60
POWER MOSFET
IMPORTANT NOTICE
Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any
integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or
environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for
use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is
understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the
customer should provide adequate design and operating safeguards.
HsinChu Headquarter
Sales & Marketing
5F, No. 11, Park Avenue II,
Science-Based Industrial Park,
HsinChu City, Taiwan
T E L : +886-3-567 9979
F A X : +886-3-567 9909
21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City,
Taipei County 22102,
Taiwan R.O.C
T E L : +886-2-2696 3558
F A X : +886-2-2696 3559
2011/03/23 Rev. 1.5
Champion Microelectronic Corporation
Page 8
Similar pages