SavantIC Semiconductor Product Specification MJL21194 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PL package ·Complement to type MJL21193 ·Excellent gain linearity APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Fig.1 simplified outline (TO-3PL) and symbol Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS MAX UNIT VCBO Collector-base voltage Open emitter 400 V VCEO Collector-emitter voltage Open base 250 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 16 A ICM Collector current-peak 30 A IB Base current 5 A PD Total power dissipation 200 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 0.7 UNIT /W SavantIC Semiconductor Product Specification MJL21194 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=100mA ;IB=0 VCE(sat)-1 Collector-emitter saturation voltage IC=8A ;IB=0.8A 1.4 V VCE(sat)-2 Collector-emitter saturation voltage IC=16A ;IB=3.2A 4.0 V VBE(ON) Base-emitter on voltage IC=8A ; VCE=5V 2.2 V ICEX Collector cut-off current VCE=250V; VBE(off)=1.5V 100 µA ICEO Collector cut-off current VCE=200V; IB=0 100 µA IEBO Emitter cut-off current VEB=5V; IC=0 100 µA hFE-1 DC current gain IC=8A ; VCE=5V 25 hFE-2 DC current gain IC=16A ; VCE=5V 8 Transition frequency IC=1A ; VCE=10V,f=1MHz 4 Collector output capacitance f=1MHz;VCB=10V,IE=0 fT COB CONDITIONS 2 MIN TYP. MAX 250 UNIT V 75 MHz 500 pF SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 MJL21194