Fairchild FDS6912A Dual n-channel logic level powertrench mosfet Datasheet

FDS6912A
Dual N-Channel Logic Level PowerTrench MOSFET
General Description
Features
These N-Channel Logic Level MOSFETs are produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
superior switching performance.
• 6 A, 30 V.
RDS(ON) = 28 mΩ @ VGS = 10 V
RDS(ON) = 35 mΩ @ VGS = 4.5 V
• Fast switching speed
• Low gate charge
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
DD1
DD1
D2
D
5
DD2
6
4
3
Q1
7
SO-8
Pin 1 SO-8
G2
S2 S
8
S
2
Q2
1
S
Absolute Maximum Ratings
Symbol
G1
S1 G
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
6
A
– Continuous
(Note 1a)
– Pulsed
PD
20
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
(Note 1c)
TJ, TSTG
W
0.9
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6912A
FDS6912A
13’’
12mm
2500 units
2003 Fairchild Semiconductor Corporation
FDS6912A Rev D(W)
FDS6912A
July 2003
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
30
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate–Source Leakage
On Characteristics
VGS(th)
V
25
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55°C
VGS = ±20 V, VDS = 0 V
mV/°C
1
10
µA
±100
nA
(Note 2)
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
1
1.9
–4.5
3
V
ID(on)
On–State Drain Current
VGS = 10 V, ID = 6 A
VGS = 4.5 V, ID = 5 A
VGS = 10 V, ID = 6 A,TJ = 125°C
VGS = 10 V, VDS = 5 V
19
24
27
28
35
44
gFS
Forward Transconductance
VDS = 10 V,
ID = 6 A
25
S
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
575
pF
145
pF
65
pF
2.1
Ω
mV/°C
20
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
VGS = 15 mV, f = 1.0 MHz
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
3
6
ns
Qg
Total Gate Charge
5.8
8.1
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 15 V,
VGS = 10 V,
VDS = 15 V,
VGS = 5 V
ID = 1 A,
RGEN = 6 Ω
ID = 6 A,
8
16
ns
5
10
ns
23
37
ns
1.7
nC
2.1
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 1.3 A
IF = 6 A,
diF/dt = 100 A/µs
(Note 2)
0.75
1.3
A
1.2
V
20
nS
10
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a 0.5in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02
in2 pad of 2 oz
copper
c) 135°C/W when mounted on a
minimum mounting pad.
Scale 1 : 1 on letter size paper
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6912A Rev D(W)
FDS6912A
Electrical Characteristics
FDS6912A
Typical Characteristics
20
2.2
4.0V
3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10.0V
ID, DRAIN CURRENT (A)
16
6.0V
4.5V
12
8
3.0V
4
1.8
1.4
0
4.5V
5.0
6.0V
10.0V
1
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
0
2
Figure 1. On-Region Characteristics.
4
8
12
ID, DRAIN CURRENT (A)
16
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.08
ID = 3A
ID = 6A
VGS = 10.0V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.0
0.6
0
1.4
1.2
1
0.8
0.07
0.06
0.05
TA = 125oC
0.04
0.03
TA = 25oC
0.02
0.01
0.6
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
2
150
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
16
ID, DRAIN CURRENT (A)
VGS = 3.5V
12
TA = 125oC
-55oC
8
25oC
4
10
TA = 125oC
1
0.1
25oC
0.01
-55oC
0.001
0.0001
0
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6912A Rev D(W)
FDS6912A
Typical Characteristics
800
ID = 6A
f = 1MHz
VGS = 0 V
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
600
Ciss
400
Coss
200
2
Crss
0
0
0
2
4
6
8
Qg, GATE CHARGE (nC)
10
0
12
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
50
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
20
Figure 8. Capacitance Characteristics.
100
100µs
10
1ms
10ms
100ms
1s
1
10s
DC
VGS = 10V
SINGLE PULSE
RθJA = 135oC/W
0.1
o
TA = 25 C
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
5
10
15
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * R θJA
RθJA = 135°C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
TJ - T A = P * R θJA(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6912A Rev D(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I5
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