ON MBT35200 High current surface mount pnp silicon switching transistor for load management in portable application Datasheet

MBT35200MT1
High Current Surface
Mount PNP Silicon
Switching Transistor for
Load Management in
Portable Applications
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A Device of the X Family
35 VOLTS
2.0 AMPS
PNP TRANSISTOR
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCEO
–35
Vdc
Collector-Base Voltage
VCBO
–55
Vdc
Emitter-Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–2.0
Adc
Collector Current — Peak
ICM
–5.0
A
Electrostatic Discharge
ESD
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS
3
Characteristic
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
TA = 25°C
Derate above 25°C
Symbol
Max
Unit
PD (Note 1.)
625
mW
5.0
mW/°C
RθJA (Note 1.)
200
°C/W
PD (Note 2.)
1.0
W
8.0
mW/°C
Thermal Resistance,
Junction to Ambient
RθJA (Note 2.)
120
°C/W
Thermal Resistance,
Junction to Lead #1
RθJL
80
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
5
1
6
CASE 318G
TSOP
STYLE 6
DEVICE MARKING
G4 (date code)
PDsingle
(Notes 2. & 3.)
1.75
W
TJ, Tstg
–55 to
+150
°C
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 X 1.0 inch Pad
3. ref: Figure 9
 Semiconductor Components Industries, LLC, 2000
August, 2000 – Rev. 1
4
2
ORDERING INFORMATION
1
Device
Package
Shipping
MBT35200MT1
Case 318G
3000/Tape & Reel
Publication Order Number:
MBT35200MT1/D
MBT35200MT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typical
Max
–35
–45
—
–55
–65
—
–5.0
–7.0
—
—
–0.03
–0.1
—
–0.03
–0.1
—
–0.01
–0.1
100
100
100
200
200
200
—
400
—
—
—
—
–0.125
–0.175
–0.260
–0.15
–0.20
–0.31
—
–0.68
–0.85
—
–0.81
–0.875
100
—
—
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mAdc, IB = 0)
V(BR)CEO
Collector–Base Breakdown Voltage
(IC = –0.1 mAdc, IE = 0)
V(BR)CBO
Emitter–Base Breakdown Voltage
(IE = –0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = –35 Vdc, IE = 0)
ICBO
Collector–Emitter Cutoff Current
(VCES = –35 Vdc)
ICES
Emitter Cutoff Current
(VEB = –4.0 Vdc)
IEBO
Vdc
Vdc
Vdc
Adc
Adc
Adc
ON CHARACTERISTICS
DC Current Gain (1)
(IC = –1.0 A, VCE = –1.5 V)
(IC = –1.5 A, VCE = –1.5 V)
(IC = –2.0 A, VCE = –3.0 V)
hFE
Collector–Emitter Saturation Voltage (Note 4.)
(IC = –0.8 A, IB = –0.008 A)
(IC = –1.2 A, IB = –0.012 A)
(IC = –2.0 A, IB = –0.02 A)
VCE(sat)
Base–Emitter Saturation Voltage (Note 4.)
(IC = –1.2 A, IB = –0.012 A)
VBE(sat)
Base–Emitter Turn–on Voltage (Note 4.)
(IC = –2.0 A, VCE = –3.0 V)
VBE(on)
Cutoff Frequency
(IC = –100 mA, VCE = –5.0 V, f = 100 MHz)
V
V
V
fT
MHz
Input Capacitance (VEB = –0.5 V, f = 1.0 MHz)
Cibo
—
600
650
pF
Output Capacitance (VCB = –3.0 V, f = 1.0 MHz)
Cobo
—
85
100
pF
Turn–on Time (VCC = –10 V, IB1 = –100 mA, IC = –1 A, RL = 3 )
ton
—
35
—
nS
Turn–off Time (VCC = –10 V, IB1 = IB2 = –100 mA, IC = 1 A, RL = 3 )
toff
—
225
—
nS
4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle ≤ 2%
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2
10
0.01
1.6
1.4
1.2
1.0
0.001
0.01
0.1
0.20
100°C
0.15
25°C
0.10
0.05
0
0.001
0.01
0.1
1.0
Figure 1. Collector Emitter Saturation Voltage
versus Collector Current
Figure 2. Collector Emitter Saturation Voltage
versus Collector Current
1.0
100°C
25°C
-55°C
0.2
0.001
0.01
0.1
25°C
0.6
100°C
0.4
0.2
0
1.0
-55°C
0.8
0.001
0.1
0.01
1.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. DC Current Gain versus
Collector Current
Figure 4. Base Emitter Saturation Voltage
versus Collector Current
1.1
750
1.0
700
0.9
100°C
0.8
25°C
0.7
0.6
-55°C
0.5
0.4
0.3
-55°C
IC, COLLECTOR CURRENT (AMPS)
0.4
0
IC/IB = 50
IC, COLLECTOR CURRENT (AMPS)
0.8
0.6
0.25
1.0
C ibo , INPUT CAPACITANCE (pF)
hFE , DC CURRENT GAIN (NORMALIZED)
IC/IB = 100
50
0.001
V BE(on) , BASE EMITTER TURN-ON VOLTAGE (VOLTS)
VCE(sat) , COLLECTOR EMITTER SATURATION
VOLTAGE (VOLTS)
0.1
VBE(sat) , BASE EMITTER SATURATION
VOLTAGE (VOLTS)
VCE(sat) , COLLECTOR EMITTER SATURATION
VOLTAGE (VOLTS)
MBT35200MT1
650
600
550
500
450
400
350
0.001
0.01
0.1
300
1.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
IC, COLLECTOR CURRENT (AMPS)
VEB, EMITTER BASE VOLTAGE (VOLTS)
Figure 5. Base Emitter Turn–On Voltage
versus Collector Current
Figure 6. Input Capacitance
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3
4.5
5.0
MBT35200MT1
10
200
IC , COLLECTOR CURRENT (AMPS)
Cobo, OUTPUT CAPACITANCE (pF)
225
175
150
125
100
75
50
1 s 100 ms 10 ms
r(t), NORMALIZED TRANSIENT THERMAL
RESISTANCE
1.0
0
5.0
100 s
1.0
DC
0.1
25
0
1 ms
0.01
SINGLE PULSE AT Tamb = 25°C
VCB, COLLECTOR BASE VOLTAGE (VOLTS)
1.0
10
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Output Capacitance
Figure 8. Safe Operating Area
10
15
20
25
30
35
0.1
100
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
t, TIME (sec)
1.0
Figure 9. Normalized Thermal Response
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4
10
100
1000
MBT35200MT1
INFORMATION FOR USING THE TSOP–6 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.094
2.4
0.037
0.95
0.074
1.9
0.037
0.95
0.028
0.7
0.039
1.0
inches
mm
TSOP–6
TSOP–6 POWER DISSIPATION
SOLDERING PRECAUTIONS
The power dissipation of the TSOP–6 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the TSOP–6 package, PD can be calculated as
follows:
PD =
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 625 milliwatts.
PD =
150°C – 25°C
200°C/W
= 625 milliwatts
The 200°C/W for the TSOP–6 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of
625 milliwatts. There are other alternatives to achieving
higher power dissipation from the TSOP–6 package.
Another alternative would be to use a ceramic substrate or
an aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
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MBT35200MT1
PACKAGE DIMENSIONS
CASE 318G–02
ISSUE G
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
L
6
S
1
5
4
2
3
B
D
G
M
J
C
0.05 (0.002)
H
K
DIM
A
B
C
D
G
H
J
K
L
M
S
MILLIMETERS
MIN
MAX
2.90
3.10
1.30
1.70
0.90
1.10
0.25
0.50
0.85
1.05
0.013
0.100
0.10
0.26
0.20
0.60
1.25
1.55
0
10 2.50
3.00
STYLE 6:
PIN 1.
2.
3.
4.
5.
6.
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COLLECTOR
COLLECTOR
BASE
EMITTER
COLLECTOR
COLLECTOR
INCHES
MIN
MAX
0.1142 0.1220
0.0512 0.0669
0.0354 0.0433
0.0098 0.0197
0.0335 0.0413
0.0005 0.0040
0.0040 0.0102
0.0079 0.0236
0.0493 0.0610
0
10 0.0985 0.1181
MBT35200MT1
Notes
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MBT35200MT1
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MBT35200MT1/D
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