June 1998 FDS6912A Dual N-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. SuperSOTTM-6 SOT-23 SuperSOTTM-8 6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V RDS(ON) = 0.035 Ω @ VGS = 4.5 V. Fast switching speed. Low gate charge (typical 9 nC). High performance trench technology for extremely low RDS(ON). High power and current handling capability. SO-8 SOIC-16 SOT-223 D2 D1 D2 D1 SO-8 S FD 2A 1 69 pin 1 Absolute Maximum Ratings Symbol Parameter VDSS VGSS ID Drain Current - Continuous S1 G1 S2 G2 TJ,TSTG 4 6 3 7 2 8 1 TA = 25oC unless other wise noted FDS6912A Units Drain-Source Voltage 30 V Gate-Source Voltage ±20 V 6 A (Note 1a) - Pulsed PD 5 Power Dissipation for Single Operation 20 (Note 1a) 2 (Note 1b) 1.6 (Note 1c) 0.9 Operating and Storage Temperature Range W -55 to 150 °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W © 1998 Fairchild Semiconductor Corporation FDS6912A Rev.C Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V o V mV /oC 23 TJ = 55°C 1 µA 10 µA IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA 3 V ON CHARACTERISTICS VGS(th) (Note 2) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 ∆VGS(th)/∆TJ Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 6 A o 1.5 mV /oC -4 TJ =125°C VGS = 4.5 V, I D = 5 A 0.023 0.028 0.036 0.044 0.029 0.035 20 Ω ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 15 V, I D= 6 A 18 A S VDS = 15 V, VGS = 0 V, f = 1.0 MHz 830 pF 185 pF 80 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time VDS= 15 V, I D = 1 A 6 12 ns tr Turn - On Rise Time VGS = 10 V , RGEN = 6 Ω 10 18 ns tD(off) Turn - Off Delay Time 18 29 ns 5 12 ns 9 13 nC tf Turn - Off Fall Time Qg Total Gate Charge VDS = 15 V, I D = 7.5 A, Qgs Gate-Source Charge VGS = 5 V Qgd Gate-Drain Charge 2.8 nC 3.1 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.73 1.3 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 78OC/W on a 0.5 in2 pad of 2oz copper. b. 125OC/W on a 0.02 in2 pad of 2oz copper. c. 135OC/W on a 0.003 in2 pad of 2oz copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDS6912A Rev.C Typical Electrical Characteristics 32 5 5.5V 4.5V 4.0V RDS(ON) , NORMALIZED VGS =10V 3.5V 24 16 3.0V 8 2.5V 0 0 1 2 3 DRAIN-SOURCE ON-RESISTANCE I D , DRAIN-SOURCE CURRENT (A) 40 3 3.0 V 2 3.5 V 4.5 V 10V 1 0 4 V GS = 2.5V 4 0 6 VDS , DRAIN-SOURCE VOLTAGE (V) R DS(ON) , ON-RESISTANCE (OHM) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 24 30 0.15 1.6 I D = 6A VGS = 10V 1.4 1.2 1 0.8 0.6 -50 ID = 3A 0.12 0.09 0.06 TA = 125°C 0.03 25°C 0 -25 0 25 50 75 100 125 150 0 2 Figure 3. On-Resistance Variation Temperature. 4 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C) with Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 25 I S , REVERSE DRAIN CURRENT (A) TJ = -55°C V DS =5.0V 25°C I D , DRAIN CURRENT (A) 18 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 20 125°C 15 10 5 0 12 I D , DRAIN CURRENT (A) VGS = 0V TJ = 125°C 1 25°C 0.1 -55°C 0.01 0.001 1 2 3 4 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 5 0 0.2 0.4 0.6 0.8 1 1.2 V SD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6912A Rev.C Typical Electrical Characteristics 1500 V DS = 5V I D = 6A C iss 10V 8 15V CAPACITANCE (pF) VGS , GATE-SOURCE VOLTAGE (V) 10 6 4 500 200 Coss 100 50 0 0.1 0 3 6 9 12 15 C rss f = 1 MHz V GS = 0 V 2 0.2 18 0.5 1 2 5 10 30 VDS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC) Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 30 10 R (O DS N) LIM IT 100 1m 10m 2 10 0.5 1s 0.01 0.1 0.5 s s s 10s DC VGS =10V SINGLE PULSE RθJA = 135°C/W A TA = 25°C 0.05 0m SINGLE PULSE R θJA =135 °C/W TA = 25°C 25 us POWER (W) I D , DRAIN CURRENT (A) 100 50 20 15 10 5 1 2 5 10 30 0 0.01 50 0.1 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 10 50 100 300 SINGLE PULSE TIME (SEC) VDS , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 R θJA (t) = r(t) * R θJA R θJA =135° C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R JA (t) θ Duty Cycle, D = t1 /t2 0.005 0.001 0.01 0.1 1 10 100 300 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. FDS6912A Rev.C