TI LM2900DG4 Quadruple norton operational amplifier Datasheet

LM2900, LM3900
QUADRUPLE NORTON OPERATIONAL AMPLIFIERS
SLOS059 – JULY 1979 – REVISED SEPTEMBER 1990
D
D
D
D
D
D
D
N PACKAGE
(TOP VIEW)
Wide Range of Supply Voltages, Single or
Dual Supplies
Wide Bandwidth
Large Output Voltage Swing
Output Short-Circuit Protection
Internal Frequency Compensation
Low Input Bias Current
Designed to Be Interchangeable With
National Semiconductor LM2900 and
LM3900, Respectively
1IN +
2IN +
2IN –
2OUT
1OUT
1IN –
GND
1
14
2
13
3
12
4
11
5
10
6
9
7
8
VCC
3IN +
4IN +
4IN –
4OUT
3OUT
3IN –
description
These devices consist of four independent, highgain frequency-compensated Norton operational
amplifiers that were designed specifically to
operate from a single supply over a wide range of
voltages. Operation from split supplies is also
possible. The low supply current drain is
essentially independent of the magnitude of the
supply voltage. These devices provide wide bandwidth and large output voltage swing.
symbol (each amplifier)
+
IN +
OUT
–
IN –
The LM2900 is characterized for operation from
– 40°C to 85°C, and the LM3900 is characterized
for operation from 0°C to 70°C.
schematic (each amplifier)
VCC
Constant
Current
Generator
200 µA
OUT
IN –
1.3 mA
IN +
Copyright  1990, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
1
LM2900, LM3900
QUADRUPLE NORTON OPERATIONAL AMPLIFIERS
SLOS059 – JULY 1979 – REVISED SEPTEMBER 1990
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
LM2900
LM3900
UNIT
Supply voltage, VCC (see Note 1)
36
36
V
Input current
20
20
mA
unlimited
unlimited
Duration of output short circuit (one amplifier) to ground at (or below) 25°C free-air temperature
(see Note 2)
Continuous total dissipation
See Dissipation Rating Table
Operating free-air temperature range
– 40 to 85
0 to 70
°C
Storage temperature range
– 65 to 150
– 65 to 150
°C
260
260
°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
NOTES: 1. All voltage values, except differential voltages, are with respect to the network ground terminal.
2. Short circuits from outputs to VCC can cause excessive heating and eventual destruction.
DISSIPATION RATING TABLE
PACKAGE
N
TA ≤ 25°C
POWER RATING
1150 mW
DERATING FACTOR
ABOVE TA = 25°C
9.2 mW/°C
TA = 70°C
POWER RATING
TA = 85°C
POWER RATING
736 mW
598 mW
recommended operating conditions
LM2900
Supply voltage, VCC (single supply)
LM3900
UNIT
MIN
MAX
MIN
MAX
4.5
32
4.5
32
V
V
Supply voltage, VCC + (dual supply)
2.2
16
2.2
16
Supply voltage, VCC – (dual supply)
– 2.2
– 16
– 2.2
– 16
V
–1
mA
Input current (see Note 3)
–1
Operating free-air temperature, TA
– 40
85
0
70
°C
NOTE 3: Clamp transistors are included that prevent the input voltages from swinging below ground more than approximately – 0.3 V. The
negative input currents that may result from large signal overdrive with capacitive input coupling must be limited externally to values
of approximately – 1 mA. Negative input currents in excess of – 4 mA causes the output voltage to drop to a low voltage. These
values apply for any one of the input terminals. If more than one of the input terminals are simultaneously driven negative, maximum
currents are reduced. Common-mode current biasing can be used to prevent negative input voltages.
2
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
LM2900, LM3900
QUADRUPLE NORTON OPERATIONAL AMPLIFIERS
SLOS059 – JULY 1979 – REVISED SEPTEMBER 1990
electrical characteristics, VCC = 15 V, TA = 25°C (unless otherwise noted)
IIB
LM2900
TEST CONDITIONS†
PARAMETER
Input bias current (inverting input)
II + = 0
MIN
Change in mirror gain
MAX
30
200
TA = 25°C
TA = Full range
II+ = 20 µA to 200 µA
TA = Full range,
range
See Note 4
Mirror gain
LM3900
TYP
MIN
300
09
0.9
TYP
MAX
30
200
300
11
1.1
09
0.9
11
1.1
2%
5%
2%
5%
10
500
10
500
UNIT
nA
µA/µA
Mirror current
VI + = VI –,
See Note 4
g ,
TA = Full range,
AVD
Large-signal differential
voltage amplification
VO = 10 V,
f = 100 Hz
RL = 10 kΩ,
ri
Input resistance (inverting input)
1
1
MΩ
ro
Output resistance
8
8
kΩ
B1
Unity-gain bandwidth (inverting
input)
2.5
2.5
MHz
kSVR
Supply voltage rejection ratio
(∆VCC /∆VIO)
70
70
dB
VOH
High-level output voltage
III+ = 0
0,
II – = 0
VOL
Low-level output voltage
II + = 0,
RL = 2 kΩ
II – = 10 µA,
IOS
Short-circuit output current
(output internally high)
II + = 0,
VO = 0
II – = 0,
1.2
RL = 2 kΩ
1.2
13.5
VCC = 30 V,
No load
Pulldown current
2.8
2.8
µA
V/mV
13.5
29.5
0.09
V
29.5
0.2
0.09
0.2
V
–6
– 18
–6
– 10
mA
0.5
1.3
0.5
1.3
mA
IOL
II – = 5 µA
VOL = 1 V
5
5
mA
ICC
Supply current (four amplifiers)
No load
6.2
10
6.2
10
mA
† All characteristics are measured under open-loop conditions with zero common-mode voltage unless otherwise specified. Full range for TA is
– 40°C to 85°C for LM2900 and 0°C to 70°C for LM3900.
‡ The output current-sink capability can be increased for large-signal conditions by overdriving the inverting input.
NOTE 4: These parameters are measured with the output balanced midway between VCC and GND.
Low-level output current‡
operating characteristics, VCC± = ±15 V, TA = 25°C
PARAMETER
SR
Slew rate at unity gain
TEST CONDITIONS
Low-to-high output
High-to-low output
V
VO = 10 V,
POST OFFICE BOX 655303
pF
CL = 100 pF,
• DALLAS, TEXAS 75265
RL = 2 kΩ
MIN
TYP
0.5
20
MAX
UNIT
V/µs
3
LM2900, LM3900
QUADRUPLE NORTON OPERATIONAL AMPLIFIERS
SLOS059 – JULY 1979 – REVISED SEPTEMBER 1990
TYPICAL CHARACTERISTICS†
INPUT BIAS CURRENT (INVERTING INPUT)
vs
FREE-AIR TEMPERATURE
MIRROR GAIN
vs
FREE-AIR TEMPERATURE
1.2
80
VCC = 15 V
VO = 7.5 V
II + = 0
VCC = 15 V
II + = 10 µA
1.15
1.1
60
II – /I + – Mirror Gain
IIB – Input Bias Current – nA
70
50
40
30
1.05
1
0.95
20
0.9
10
0.85
0
– 75
– 50
– 25
0
25
50
75
TA – Free-Air Temperature – °C
0.8
– 75
100
– 50
– 25
0
25
50
75
100
TA – Free-Air Temperature – °C
Figure 1
Figure 2
LARGE SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
SUPPLY VOLTAGE
LARGE SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREQUENCY
104
104
VCC = 15 V
TA = 25°C
AVD – Differential Voltage Amplification
AVD – Differential Voltage Amplification
RL ≥ 10 kΩ
103
RL = 2 kΩ
102
10
1
100
1k
10 k
100 k
1M
10 M
103
102
10
RL = 10 kΩ
TA = 25°C
1
0
5
10
15
20
25
VCC – Supply Voltage – V
f – Frequency – Hz
Figure 3
Figure 4
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
4
125
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
30
LM2900, LM3900
QUADRUPLE NORTON OPERATIONAL AMPLIFIERS
SLOS059 – JULY 1979 – REVISED SEPTEMBER 1990
TYPICAL CHARACTERISTICS†
LARGE SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
SUPPLY VOLTAGE REJECTION RATIO
vs
FREQUENCY
100
KSVR – Supply Voltage Rejection Ratio – dB
AVD – Differential Voltage Amplification
104
103
102
10
VCC = 15 V
VO = 10 V
RL = 10 kΩ
1
– 75
– 50
– 25
0
25
50
75
100
VCC = 15 V
TA = 25°C
90
80
70
60
50
40
30
20
10
0
100
125
400 1 k
TA – Free-Air Temperature – °C
SHORT-CIRCUIT OUTPUT CURRENT
(OUTPUT INTERNALLY HIGH)
vs
SUPPLY VOLTAGE
PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
16
30
VCC = 15 V
RL = 2 kΩ
II + = 0
TA = 25°C
14
12
IOS – Short-Circuit Output Current – mA
VO(PP) – Peak-To-Peak Output Voltage – V
40 k 100 k 400 k 1 M
Figure 6
Figure 5
10
8
6
ÁÁ
ÁÁ
ÁÁ
4
2
0
1k
4k 10 k
f – Frequency – Hz
10 k
100 k
1M
10 M
VO = 0
II + = 0
II – = 0
25
TA = 0°C
20
TA = 25°C
15
10
5
0
0
5
f – Frequency – Hz
Figure 7
10
15
20
VCC – Supply Voltage – V
25
30
Figure 8
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
5
LM2900, LM3900
QUADRUPLE NORTON OPERATIONAL AMPLIFIERS
SLOS059 – JULY 1979 – REVISED SEPTEMBER 1990
TYPICAL CHARACTERISTICS†
LOW-LEVEL OUTPUT CURRENT
vs
SUPPLY VOLTAGE
PULLDOWN CURRENT
vs
SUPPLY VOLTAGE
2
VOL = 1 V
II + = 0
TA = 25°C
50
1.8
II – = 100 µA
40
30
20
II – = 10 µA
10
0
5
1.4
TA = 25°C
1.2
1
TA = 85°C
0.8
0.6
0.4
II – = 5 µA
0
TA = – 40°C
1.6
Pulldown Current – mA
IOL– Low-Level Output Current – mA
60
0.2
10
15
20
VCC – Supply Voltage – V
25
0
30
0
5
10
15
20
VCC – Supply Voltage – V
25
30
Figure 10
Figure 9
TOTAL SUPPLY CURRENT
vs
SUPPLY VOLTAGE
PULLDOWN CURRENT
vs
FREE-AIR TEMPERATURE
8
2
VCC = 15 V
1.8
7
I CC – Total Supply Current – mA
Pulldown Current – mA
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
– 75
– 50
– 25
0
25
50
75
100
125
6
5
4
3
2
TA = 25°C
No Signal
No Load
1
0
0
5
TA – Free-Air Temperature –°C
10
15
20
25
30
VCC – Supply Voltage – V
Figure 11
Figure 12
† Data at high and low temperatures are applicable only within the rated operating free-air temperature ranges of the various devices.
6
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
LM2900, LM3900
QUADRUPLE NORTON OPERATIONAL AMPLIFIERS
SLOS059 – JULY 1979 – REVISED SEPTEMBER 1990
APPLICATION INFORMATION
Norton (or current-differencing) amplifiers can be used in most standard general-purpose operational amplifier
applications. Performance as a dc amplifier in a single-power-supply mode is not as precise as a standard
integrated-circuit operational amplifier operating from dual supplies. Operation of the amplifier can best be
understood by noting that input currents are differenced at the inverting input terminal and this current then flows
through the external feedback resistor to produce the output voltage. Common-mode current biasing is generally
useful to allow operating with signal levels near (or even below) ground.
Internal transistors clamp negative input voltages at approximately – 0.3 V but the magnitude of current flow has to
be limited by the external input network. For operation at high temperature, this limit should be approximately
– 100 µA.
Noise immunity of a Norton amplifier is less than that of standard bipolar amplifiers. Circuit layout is more critical since
coupling from the output to the noninverting input can cause oscillations. Care must also be exercised when driving
either input from a low-impedance source. A limiting resistor should be placed in series with the input lead to limit the
peak input current. Current up to 20 mA will not damage the device, but the current mirror on the noninverting input
will saturate and cause a loss of mirror gain at higher current levels, especially at high operating temperatures.
V+
1 MΩ
10 kΩ
1 MΩ
1 kΩ
1 MΩ
–
Input
30 kΩ
100 kΩ
+
Output
91 kΩ
IO ≈ 1 mA per input volt
Figure 13. Voltage-Controlled Current Source
V+
1 MΩ
1 MΩ
–
Output
100 kΩ
+
Input
100 kΩ
1 kΩ
IO
≈ 1 mA per input volt
Figure 14. Voltage-Controlled Current Sink
POST OFFICE BOX 655303
• DALLAS, TEXAS 75265
7
PACKAGE OPTION ADDENDUM
www.ti.com
23-Apr-2007
PACKAGING INFORMATION
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
LM2900D
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DE4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DE4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DE4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DG4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DG4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DG4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DR
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DR
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DR
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DRE4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DRE4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DRE4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DRG4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DRG4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900DRG4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM2900N
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM2900N
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM2900N
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM2900NE4
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM2900NE4
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM2900NE4
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM3900D
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900D
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900D
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
Addendum-Page 1
Lead/Ball Finish
MSL Peak Temp (3)
PACKAGE OPTION ADDENDUM
www.ti.com
23-Apr-2007
Orderable Device
Status (1)
Package
Type
Package
Drawing
Pins Package Eco Plan (2)
Qty
LM3900DE4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DE4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DE4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DG4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DG4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DG4
ACTIVE
SOIC
D
14
50
Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DR
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DR
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DR
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DRE4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DRE4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DRE4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DRG4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DRG4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900DRG4
ACTIVE
SOIC
D
14
2500 Green (RoHS &
no Sb/Br)
CU NIPDAU
Level-1-260C-UNLIM
LM3900N
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM3900N
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM3900N
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM3900NE4
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM3900NE4
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
LM3900NE4
ACTIVE
PDIP
N
14
25
Pb-Free
(RoHS)
CU NIPDAU
N / A for Pkg Type
Lead/Ball Finish
MSL Peak Temp (3)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
Addendum-Page 2
PACKAGE OPTION ADDENDUM
www.ti.com
23-Apr-2007
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 3
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
B0
(mm)
K0
(mm)
P1
(mm)
W
Pin1
(mm) Quadrant
LM2900DR
SOIC
D
14
2500
330.0
16.4
6.5
9.0
2.1
8.0
16.0
Q1
LM3900DR
SOIC
D
14
2500
330.0
16.4
6.5
9.0
2.1
8.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
14-Jul-2012
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
LM2900DR
SOIC
D
14
2500
367.0
367.0
38.0
LM3900DR
SOIC
D
14
2500
367.0
367.0
38.0
Pack Materials-Page 2
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