STMicroelectronics AM81214-030 L-band radar applications rf & microwave transistor Datasheet

AM81214-030
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RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
RUGGEDIZED VSWR ∞:1
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 26 W MIN. WITH 7.2 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM81214-030
DESCRIPTION
BRANDING
81214-30
PIN CONNECTION
The AM81214-030 device is a high power transistor
specifically designed for L-Band Radar pulsed
driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles and temperatures and is capable of withstanding ∞:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bonding techniques ensure high reliability and product
consistency.
The AM81214-030 is supplied in the IMPAC Hermetic M etal/Ceramic package with i nternal
Input/Output matching structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 ° C)
Symbol
PDISS
IC
VCC
TJ
T STG
Parameter
Value
Unit
63
W
2.75
A
Collector-Supply Voltage*
32
V
Junction Temperature (Pulsed RF Operation)
250
°C
− 65 to +200
°C
2.4
°C/W
Power Dissipation*
(TC ≤ 100°C)
Device Current*
Storage Temperature
THERMAL DATA
RTH(j-c)
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
August 1992
1/6
AM81214-030
ELECTRICAL SPECIFICATIONS (T case = 25 ° C)
STATIC
Valu e
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
BVCBO
IC = 10mA
IE = 0mA
55
—
—
V
BVEBO
IE = 1mA
IC = 0mA
3.5
—
—
V
BVCER
IC = 20mA
RBE = 10Ω
55
—
—
V
ICES
VBE = 0V
VCE = 28V
—
—
5
mA
hFE
VCE = 5V
IC = 1A
15
—
150
—
Min.
Value
Typ.
Max.
Unit
DYNAMIC
Symbol
Test Conditions
PIN
ηc
f = 1215 — 1400MHz
PIN = 5W Peak
VCC = 28V
26
36
—
W
f = 1215 — 1400MHz
PIN = 5W Peak
VCC = 28V
45
49
—
%
GP
f = 1215 — 1400MHz
PIN = 5W Peak
VCC = 28V
7.2
8.5
—
dB
Note:
Pulse W idth
Duty Cycle
2/6
=
=
1000 µ S
10%
AM81214-030
TYPICAL PERFORMANCE
RELATIVE POWER OUTPUT &
COLLECTOR EFFICIENCY vs
COLLECTOR VOLTAGE
TYPICAL BROADBAND
POWER AMPLIFIER
MAXIMUM THERMAL RESISTANCE
vs PULSE WIDTH
3/6
AM81214-030
IMPEDANCE DATA
TYPICAL INPUT
IMPEDANCE
ZIN
PIN = 5.0 W
VCC = 28 V
ZO = 50 Ohms
FREQ.
ZIN (Ω)
ZCL (Ω)
L = 1.215 GHz
4.5 + j 12.5
11.0 − j 10.0
M = 1.300 GHz
8.5 + j 13.5
10.5 − j 6.5
H = 1.400 GHz
9.5 + j 10.0
8.0 − j 5.0
TYPICAL COLLECTOR
LOAD IMPEDANCE
ZCL
PIN = 5.0 W
VCC = 28 V
ZO = 50 Ohms
4/6
AM81214-030
TEST CIRCUIT
PACKAGE MECHANICAL DATA
.318/
.306
5/6
AM81214-030
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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