FastIRFET™ IRFHM4231TRPbF HEXFET® Power MOSFET VDSS RDS(on) max (@ VGS = 10V) (@ VGS = 4.5V) 25 V 3.4 m 4.6 Qg (typical) 9.7 nC ID (@TC (Bottom) = 25°C) 40 A PQFN 3.3 x 3.3 mm Applications Control MOSFET for synchronous buck converter Features Low Charge (typical 9.7nC) Low RDSon (<3.4m) Low Thermal Resistance to PCB (<4.3°C/W) Low Profile (<0.9mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number Package Type IRFHM4231PbF PQFN 3.3mm x 3.3mm Benefits Low Switching Losses Lower Conduction Losses Enable better Thermal Dissipation results in Increased Power Density Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFHM4231TRPbF Absolute Maximum Ratings Parameter Max. Units V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 22 ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 72 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 46 IDM Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current PD @TA = 25°C Power Dissipation ID @ TC = 25°C PD @TC(Bottom) = 25°C 40 288 2.7 Power Dissipation A W 29 Linear Derating Factor 0.021 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Notes through are on page 9 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM4231TRPbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient BVDSS/TJ RDS(on) Static Drain-to-Source On-Resistance VGS(th) VGS(th) IDSS IGSS Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage gfs Forward Transconductance Qg Total Gate Charge Qg Total Gate Charge Qgs1 Pre-Vth Gate-to-Source Charge Qgs2 Post-Vth Gate-to-Source Charge Qgd Gate-to-Drain Charge Qgodr Gate Charge Overdrive Qsw Switch Charge (Qgs2 + Qgd) Qoss Output Charge RG Gate Resistance td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Avalanche Characteristics Parameter EAS Single Pulse Avalanche Energy IAR Avalanche Current Diode Characteristics Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Min. 25 ––– ––– ––– 1.1 ––– ––– ––– ––– 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 22 2.7 3.7 1.6 -5.4 ––– ––– ––– ––– 20 9.7 1.9 1.2 3.6 3.0 4.8 9.6 1.4 8.7 28 12 5.9 1270 360 97 Max. ––– ––– 3.4 4.6 2.1 ––– 1.0 100 -100 ––– ––– 15 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– ––– Units Conditions V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA m VGS = 10V, ID = 30A VGS = 4.5V, ID = 30A V VDS = VGS, ID = 35µA mV/°C µA VDS = 20V, VGS = 0V nA VGS = 20V VGS = -20V S VDS = 10V, ID = 30A nC VGS = 10V, VDS = 13V, ID = 30A nC nC VDS = 13V VGS = 4.5V ID = 30A VDS = 16V, VGS = 0V ns VDD = 13V, VGS = 4.5V ID = 30A RG=1.8 pF VGS = 0V VDS = 13V ƒ = 1.0MHz Max. 42 30 Min. ––– Typ. ––– Max. 40 ––– ––– 288 Units mJ A Units Conditions A MOSFET symbol showing the integral reverse p-n junction diode. V TJ = 25°C, IS = 30A, VGS = 0V ns TJ = 25°C, IF = 30A, VDD = 13V nC di/dt = 280A/µs D G S ––– ––– ––– ––– 16 13 1.0 24 20 Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) Typ. ––– Max. 4.3 Units ––– 37 °C/W RJA Junction-to-Ambient ––– 47 RJA (<10s) Junction-to-Ambient ––– 31 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM4231TRPbF 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V 100 2.75V 60µs PULSE WIDTH BOTTOM 2.75V 10 60µs PULSE WIDTH Tj = 150°C Tj = 25°C 1 1 0.1 1 10 0.1 100 100 1.8 RDS(on) , Drain-to-Source On Resistance (Normalized) 1000 ID, Drain-to-Source Current (A) 10 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 100 TJ = 150°C 10 TJ = 25°C V DS = 10V 60µs PULSE WIDTH 1.0 ID = 30A V GS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1.0 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 V GS, Gate-to-Source Voltage (V) 100000 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd V GS, Gate-to-Source Voltage (V) ID= 30A Coss = Cds + Cgd 10000 Ciss Coss 1000 Crss 100 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 10 12.0 V DS= 20V V DS= 13V 10.0 V DS= 5.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 V DS, Drain-to-Source Voltage (V) www.irf.com © 2014 International Rectifier 5 10 15 20 25 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 3 VGS 10V 5.0V 4.5V 4.0V 3.5V 3.25V 3.0V 2.75V Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback June 5, 2014 IRFHM4231TRPbF 1000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 100 TJ = 150°C 10 TJ = 25°C 1 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 10 100µsec Limited by package 1 1msec 10msec 0.1 Tc = 25°C Tj = 150°C Single Pulse V GS = 0V 0.01 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1.4 1 10 100 VDS, Drain-to-Source Voltage (V) V SD, Source-to-Drain Voltage (V) Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 80 2.2 V GS(th) , Gate threshold Voltage (V) Limited by package 60 ID, Drain Current (A) DC 40 20 0 1.8 1.4 1.0 ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0mA 0.6 25 50 75 100 125 150 -75 -50 -25 TC , Case Temperature (°C) 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 10. Drain-to-Source Breakdown Voltage Fig 9. Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.02 0.01 0.1 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM4231TRPbF 200 ID = 30A EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m ) 10.0 8.0 6.0 TJ = 125°C 4.0 TJ = 25°C ID 6.8A 13A BOTTOM 30A TOP 160 120 80 40 0 2.0 2 4 6 8 10 12 14 16 18 25 20 50 75 100 125 150 Starting TJ , Junction Temperature (°C) V GS, Gate -to -Source Voltage (V) Fig 13. Maximum Avalanche Energy vs. Drain Current Fig 12. On-Resistance vs. Gate Voltage 100 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 125°C and Tstart =25°C (Single Pulse) 10 1 0.1 1.0E-06 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 125°C. 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs. Pulse Width 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM4231TRPbF Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 16a. Unclamped Inductive Test Circuit Fig 16b. Unclamped Inductive Waveforms Fig 17b. Switching Time Waveforms Fig 17a. Switching Time Test Circuit Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 18. Gate Charge Test Circuit 6 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 19. Gate Charge Waveform Submit Datasheet Feedback June 5, 2014 IRFHM4231TRPbF PQFN 3.3 x 3.3 Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 3.3 x 3.3 Part Marking Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM4231TRPbF PQFN 3.3 x 3.3 Tape and Reel REEL DIMENSIONS TAPE DIMENSIONS CODE Ao Bo Ko DIMENSION (MM) MIN MAX 3.50 3.70 3.50 3.70 1.10 1.30 7.90 P1 11.80 W 12.30 W1 Qty Reel Diameter QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE CODE Ao Bo Ko W P1 DIMENSION (INCH) MIN MAX .138 .146 .138 .146 .043 .051 8.10 12.20 12.50 .311 .465 .484 .319 .480 .492 4000 13 Inches DESCRIPTION Dimension design to accommodate the component width Dimension design to accommodate the component lenght Dimension design to accommodate the component thickness Overall width of the carrier tape Pitch between successive cavity centers Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014 IRFHM4231TRPbF Qualification Information† Industrial Qualification Level (per JEDEC JESD47F†† guidelines) PQFN 3.3mm x 3.3mm Moisture Sensitivity Level MSL1 (per JEDEC J-STD-020D††) Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.093mH, RG = 50, IAS = 30A. Pulse width 400µs; duty cycle 2%. R is measured at TJ of approximately 90°C. When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: http://www.irf.com/technical-info/appnotes/an-994.pdf Calculated continuous current based on maximum allowable junction temperature. Current is limited to 40A by source bonding technology. Revision History Date 6/5/14 Comments Updated schematic on page 1 Updated tape and reel on page 9 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback June 5, 2014