MPS651 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES G Switching and Amplifier Applications H J A Collector 2 D REF. B A B C D E F G H J K K 3 Base E C F 1 Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector - Base Voltage VCBO 80 V Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 2 A Collector Dissipation Pc 0.625 W TJ, TSTG 150, -55~150 °C Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) SYMBOL MIN. TYP. MAX. UNIT Collector-Base Breakdown Voltage V(BR)CBO 80 - - V IC=100µA, IE = 0 Collector-Emitter Breakdown Voltage V(BR)CEO* 60 - - V IC=10 mA, IB = 0 Emitter-Base Breakdown Voltage V(BR)EBO 5 - - V IE=10µA, IC = 0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=80 V, IE = 0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=4 V, IC = 0 HFE(1) * 75 - - VCE=2V, IC=50mA HFE(2) * 75 - - VCE=2V, IC=500mA HFE(3) * 75 - - VCE=2V, IC=1A HFE(4) * 40 - - - - 0.5 V IC=2A, IB=200mA IC=1A, IB=100mA PARAMETER DC Current Gain TEST CONDITIONS VCE=2V, IC=2A Collector-Emitter Saturation Voltage VCE(sat) * - - 0.3 V Base-Emitter Saturation Voltage VBE(sat) * - - 1.2 V IC=1A, IB=100mA Base-Emitter On Voltage VBE(on) * - - 1 V VCE=2V, IC=1A fT 75 - - MHz Transition Frequency http://www.SeCoSGmbH.com/ 18-Dec-2009 Rev. A VCE = 5V, IC = 50 mA, f = 100 MHz Any changes of specification will not be informed individually. Page 1 of 2 MPS651 Elektronische Bauelemente 0.625 W, 2 A, 60 V NPN Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 18-Dec-2009 Rev. A Any changes of specification will not be informed individually. Page 2 of 2