ON BC488BRL1G High current transistors pnp silicon Datasheet

BC488B
High Current Transistors
PNP Silicon
Features
• Pb−Free Package is Available*
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COLLECTOR
1
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
VCEO
−60
Vdc
Collector - Base Voltage
VCBO
−60
Vdc
Emitter-Base Voltage
VEBO
−4.0
Vdc
Collector Current − Continuous
IC
−1.0
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
−55 to +150
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
1
2
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
3
MARKING DIAGRAM
BC
488B
AYWW G
G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance,
Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance,
Junction−to−Case
RqJC
83.3
°C/W
BC488B = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC488BRL1
BC488BRL1G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 1
1
Package
Shipping †
TO−92
2000/Tape & Reel
TO−92
(Pb−Free)
2000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BC488B/D
BC488B
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Collector −Emitter Breakdown Voltage (Note 1)
(IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
−
−
Vdc
Collector −Base Breakdown Voltage
(IC = −100 mAdc, IE = 0)
V(BR)CBO
−60
−
−
Vdc
Emitter −Base Breakdown Voltage
(IE = −10 mAdc, IC = 0)
V(BR)EBO
−4.0
−
−
Vdc
ICBO
−
−
−100
nAdc
40
160
15
−
260
−
−
400
−
−
−
−0.25
−0.5
−0.5
−
−
−
−0.9
−1.0
−1.2
−
fT
−
150
−
MHz
Output Capacitance
(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
9.0
−
pF
Input Capacitance
(VEB = −0.5 Vdc, IC = 0, f = 1.0 MHz)
Cib
−
110
−
pF
OFF CHARACTERISTICS
Collector Cutoff Current
(VCB = −40 Vdc, IE = 0)
ON CHARACTERISTICS*
DC Current Gain
(IC = −10 mAdc, VCE = −2.0 Vdc)
(IC = −100 mAdc, VCE = −2.0 Vdc)
(IC = −1.0 Adc, VCE = −5.0 Vdc)
hFE
−
Collector −Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = −500 mAdc, IB = −50 mAdc)
(IC = −1.0 Adc, IB = −100 mAdc)
VBE(sat)
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = −50 mAdc, VCE = −2.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%.
TURN−ON TIME
100
+10 V
0
tr = 3.0 ns
RB
Vin
5.0 mF
+VBB
VCC
+40 V
−1.0 V
5.0 ms
TURN−OFF TIME
100
RL
VCC
+40 V
100
OUTPUT
RB
Vin
5.0 mF
*CS < 6.0 pF
5.0 ms
tr = 3.0 ns
*Total Shunt Capacitance of Test Jig and Connectors
For PNP Test Circuits, Reverse All Voltage Polarities
Figure 1. Switching Time Test Circuits
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2
100
RL
OUTPUT
*CS < 6.0 pF
200
100
VCE = −2.0 V
TJ = 25°C
70
C, CAPACITANCE (pF)
f,
T CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
BC488B
100
70
50
TJ = 25°C
Cibo
50
30
20
10
Cobo
30
7.0
20
−2.0 −3.0
−5.0 −7.0 −10
−20 −30 −50 −70 −100
IC, COLLECTOR CURRENT (mA)
5.0
−0.1 −0.2
−200
−0.5 −1.0 −2.0
−5.0 −10 −20
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Current−Gain − Bandwidth Product
−50 −100
Figure 3. Capacitance
1.0 k
700
500
ts
300
t, TIME (ns)
200
100
70
50
td @ VBE(off) = −0.5 V
tf
VCC = −40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
30
20
tr
10
−5.0 −7.0 −10 −20 −30
−50 −70 −100
−200 −300
IC, COLLECTOR CURRENT (mA)
−500
r(t) TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 4. Switching Time
1.0
0.7
0.5
D = 0.5
0.2
0.1
0.3
0.2
0.1
0.07
0.05
P(pk)
t1
0.02
t2
0.01
DUTY CYCLE, D = t1/t2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1 (SEE AN−469)
TJ(pk) − TC = P(pk) ZqJC(t)
TJ(pk) − TA = P(pk) ZqJA(t)
SINGLE PULSE
0.03
SINGLE PULSE
ZqJC(t) = r(t) • RqJC
ZqJA(t) = r(t) • RqJA
0.02
0.01
1.0
2.0
5.0
10
20
50
100
200
t, TIME (ms)
500
1.0k
Figure 5. Thermal Response
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3
2.0k
5.0k
10k
20k
50k
100
BC488B
−1.0 k
−700
1.0
100 ms
TJ = 25°C
0.8
−300
1.0 s
−200
1.0 ms
TC = 25°C
TA = 25°C
−100
−70
−50
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−30
−20
−10
−1.0
VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
−500
0.6
VBE(on) @ VCE = 1.0 V
0.4
0.2
VCE(sat) @ IC/IB = 10
BC490
−2.0 −3.0 −5.0 −7.0 −10
−20 −30 −50 −70 −100
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0
0.5
1.0
2.0
1.0
500
200
500
−0.8
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
200
Figure 7. “On” Voltages
Figure 6. Active Region, Safe Operating Area
TJ = 25°C
0.8
0.6
5.0
10
50
100
20
IC, COLLECTOR CURRENT (mA)
−1.2
50
mA
IC = 10 mA
100 mA
250 mA
500 mA
−1.6
0.4
−2.0
−2.4
0.2
0
0.05
RqVB for VBE
0.1
0.2
1.0
10
0.5
2.0
5.0
IC, COLLECTOR CURRENT (mA)
20
−2.8
0.5
50
1.0
2.0
10
100
5.0
20
50
IC, COLLECTOR CURRENT (mA)
Figure 9. Base−Emitter Temperature Coefficient
Figure 8. Collector Saturation Region
400
hFE , DC CURRENT GAIN
TJ = 125°C
VCE = −1.0 V
200
25°C
−55°C
100
80
60
40
−0.5
−0.7
−1.0
−2.0
−3.0
−5.0
−7.0
−10
−20
−30
IC, COLLECTOR CURRENT (mA)
Figure 10. DC Current Gain
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4
−50
−70
−100
−200
−300
−500
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
BC488B
−1.0
TJ = 25°C
VBE(sat) @ IC/IB = 10
−0.6
VBE(on) @ VCE = −1.0 V
−0.4
−0.2
VCE(sat) @ IC/IB = 10
0
−0.5 −1.0
−2.0
−5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
−500
TJ = 25°C
−0.8
−0.6
IC = −10 mA
−50
mA
0
−0.05 −0.1
−0.2
−0.5 −1.0 −2.0
−5.0
IB, BASE CURRENT (mA)
−1.6
RqVB for VBE
−2.4
−1.0
−2.0
−10
−20
Figure 12. Collector Saturation Region
−1.2
−2.8
−0.5
−250 mA −500 mA
−0.2
−0.8
−2.0
−100 mA
−0.4
Figure 11. “On” Voltages
RθVB, TEMPERATURE COEFFICIENT (mV/°C)
V, VOLTAGE (VOLTS)
−0.8
−1.0
−5.0 −10 −20
−50 −100 −200
IC, COLLECTOR CURRENT (mA)
−500
Figure 13. Base−Emitter Temperature Coefficient
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5
−50
BC488B
PACKAGE DIMENSIONS
TO−92
(TO−226)
CASE 29−11
ISSUE AL
A
B
R
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
L
SEATING
PLANE
K
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
D
X X
G
J
H
V
C
SECTION X−X
1
N
N
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−− 0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC488B/D
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