MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Freescale Semiconductor, Inc... Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source amplifier applications in 26 volt base station equipment. • Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts Output Power, P1dB — 80 Watts (Typ) Power Gain @ P1dB — 16 dB (Typ) Efficiency @ P1dB — 58% (Typ) • Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. 921 - 960 MHz, 70 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET CASE 465D - 05, STYLE 1 NI - 600 MAXIMUM RATINGS Rating Symbol Value Unit Drain - Source Voltage VDSS 65 Vdc Gate - Source Voltage VGS ± 20 Vdc Drain Current — Continuous ID 7 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 159 0.9 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 1.1 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 6 MOTOROLA RF DEVICE DATA Motorola, Inc. 2004 For More Information On This Product, Go to: www.freescale.com MRF6522 - 70R3 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Gate - Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 400 mAdc) VGS(Q) 3 4 5 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.15 0.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs 2 3 — S Input Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss — 130 — pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss 41 47 52 pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss 2.4 3 3.4 pF Output Power (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) P1dB 73 80 — W Common - Source Amplifier Power Gain @ P1dB (Min) (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Gps 14 16 18 dB Drain Efficiency @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) η1 47 51 — % Drain Efficiency @ P1dB (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) η2 — 58 — % Input Return Loss @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = 921 MHz and 960 MHz f = 940 MHz) IRL OFF CHARACTERISTICS Freescale Semiconductor, Inc... ON CHARACTERISTICS DYNAMIC CHARACTERISTICS FUNCTIONAL TESTS (In Motorola Test Fixture) dB — — Output Mismatch Stress (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz, VSWR = 5:1, All Phase Angles) Ψ — — - 10 - 15 No Degradation In Output Power Before and After Test (1) Value excludes the input matching. (2) To meet application requirements, Motorola test fixtures have been designed to cover full GSM 900 band ensuring batch - to - batch consistency. MRF6522 - 70R3 2 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Vreg VBIAS C1 Vin T1 Vout Gnd R1 R6 R2 R3 C3 C12 C4 C10 VSUPPLY + C2 T2 R4 C7 C14 R5 C6 C13 RF Output RF Input C5 Q1 Freescale Semiconductor, Inc... C8 C1 C2 C3 C4, C6, C14 C5 C7, C8, C13 C9, C10 C11, C12 R1 R2 C9 1.0 µF Chip Capacitor (0805) 10 µF, 35 Vdc Tantalum Capacitor 100 nF Chip Capacitor 22 pF Chip Capacitors, ACCU - P (0805) 2.7 pF Chip Capacitor, ACCU - P (0805) 4.7 pF Chip Capacitors, ACCU - P (0805) 8.2 pF Chip Capacitors, ACCU - P (0805) 2.2 pF Chip Capacitors, ACCU - P (0805) 10 Ω Chip Resistor (0805) 1.0 kΩ Chip Resistor (0805) C11 R3 R4 R5 R6 1.2 kΩ Chip Resistor (0805) 2.2 kΩ Chip Resistor (0805) 220 Ω Chip Resistor (0805) 5.0 kΩ SMD Potentiometer T1 T2 LP2951 Micro - 8 BC847 SOT - 23 SUBSTRATE GI180 0.8 mm Figure 1. MRF6522 - 70 Test Circuit Schematic VBIAS C1 C2 R1 T1 R2 R3 R4 VSUPPLY Ground R6 C14 C3 T2 C4 R5 C6 C5 C8 MRF6522 - 70 C7 C10 C12 C13 C9 C11 Q1 STRAP Figure 2. MRF6522 - 70 Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF6522 - 70R3 3 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 17.5 18.0 IDQ = 600 mA G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) 17.0 500 mA 16.5 400 mA 200 mA IDQ = 600 mA 17.8 300 mA 16.0 VDS = 26 Vdc f = 921 MHz 17.6 500 mA 17.4 400 mA 17.2 300 mA 17.0 16.8 200 mA 16.6 VDS = 26 Vdc f = 960 MHz 16.4 15.5 16.2 15.0 10 16.0 100 10 100 Pout, OUTPUT POWER (WATTS) Figure 3. Power Gain versus Output Power Figure 4. Power Gain versus Output Power 105 115 Pin = 5.0 W 3.0 W 95 2.0 W 85 75 65 IDQ = 400 mA f = 921 MHz 55 45 18 19 20 21 22 23 24 25 26 VDD, SUPPLY VOLTAGE (VOLTS) 27 28 Pout , OUTPUT POWER (WATTS) Figure 5. Output Power versus Supply Voltage 95 Pin = 5.0 W 4.0 W 85 3.0 W 75 2.0 W 65 55 IDQ = 400 mA f = 960 MHz 45 35 18 19 20 21 22 23 24 25 26 VDD, SUPPLY VOLTAGE (VOLTS) 80 70 70 60 60 50 h 40 40 30 30 Pout 20 20 VDS = 26 Vdc IDQ = 400 mA f = 921 MHz 10 0 28 Figure 6. Output Power versus Supply Voltage 80 50 27 h , EFFICIENCY (%) 4.0 W 105 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) Freescale Semiconductor, Inc... Pout, OUTPUT POWER (WATTS) 0 0.5 1.0 1.5 Pin, INPUT POWER (WATTS) 10 2.0 0 Figure 7. Efficiency and Output Power versus Input Power MRF6522 - 70R3 4 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 80 Pout 70 60 60 50 50 h 40 40 30 30 20 20 VDS = 26 Vdc IDQ = 400 mA f = 960 MHz 10 0 0 0.5 1.0 1.5 Pin, INPUT POWER (WATTS) 10 2.0 0 20 70 19 60 50 18 17 Gps 40 30 16 h 15 VDS = 26 Vdc f = 921 MHz 20 h, EFFICIENCY (%) G ps , POWER GAIN (dB) Figure 8. Efficiency and Output Power versus Input Power 10 14 13 0 0.02 0.03 0.06 0.12 0.21 0.38 0.70 1.26 2.26 3.96 Pin, INPUT POWER (WATTS) 20 70 19 60 18 50 17 Gps 40 30 16 h 15 VDS = 26 Vdc f = 960 MHz 20 h, EFFICIENCY (%) Figure 9. Power Gain and Efficiency versus Input Power G ps , POWER GAIN (dB) Freescale Semiconductor, Inc... 70 h , EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) 80 10 14 13 0 0.02 0.03 0.05 0.10 0.18 0.34 0.62 1.15 2.14 3.70 Pin, INPUT POWER (WATTS) Figure 10. Power Gain and Efficiency versus Input Power MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF6522 - 70R3 5 Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS 18 Gps −15 17 −20 16 IRL VDS = 26 Vdc IDQ = 400 mA 15 −25 910 Freescale Semiconductor, Inc... G ps , GAIN (dB) IRL, INPUT RETURN LOSS (dB) −10 920 930 940 950 f, FREQUENCY (MHz) 960 970 Figure 11. Performance in Broadband Circuit (at Small Signal) MRF6522 - 70R3 6 MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com Freescale Semiconductor, Inc. Zload f = 925 MHz 960 MHz 960 MHz Zsource Freescale Semiconductor, Inc... f = 925 MHz Zo = 5 Ω VSUPPLY = 26 Vdc, IBIAS = 400 mA, CW = Room Temperature f MHz Zsource Ω Zload Ω 925 2.65 - j2.53 1.62 + j0.2 940 2.67 - j2.14 1.56 + j0.34 960 2.85 - j1.87 1.55 + j0.2 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 12. Series Equivalent Source and Load Impedance MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF6522 - 70R3 7 Freescale Semiconductor, Inc. PACKAGE DIMENSIONS G B 2X 1 Q bbb M T A M B NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 3 B K 2 (FLANGE) bbb M D T A M B M M bbb M T A M ccc M T A M B Freescale Semiconductor, Inc... N B (INSULATOR) ccc M T A B M M M R (LID) S (INSULATOR) (LID) M C H E A DIM A B C D E F G H K M N Q R S aaa bbb ccc aaa T A SEATING PLANE M T A CASE 465D - 05 ISSUE D NI - 600 M F B M INCHES MIN MAX 1.065 1.075 0.380 0.390 0.160 0.205 0.425 0.435 0.060 0.070 0.004 0.006 0.870 BSC 0.096 0.106 0.190 0.223 0.594 0.606 0.591 0.601 0.124 0.130 0.394 0.404 0.395 0.405 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 27.05 27.30 9.65 9.91 4.06 5.21 10.80 11.05 1.52 1.78 0.10 0.15 22.10 BSC 2.44 2.69 4.83 5.66 15.09 15.39 15.01 15.27 3.15 3.30 10.01 10.26 10.03 10.29 0.13 REF 0.25 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF6522 - 70R3 8 ◊ MOTOROLA RF DEVICE DATA- 70/D MRF6522 For More Information On This Product, Go to: www.freescale.com