Freescale Semiconductor Technical Data MRF9200L Rev. 1, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment. • Typical Single−Carrier N−CDMA Performance @ 880 MHz: VDD = 26 Volts, IDQ = 2400 mA, Pout = 40 Watts Avg., IS−95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. Peak/ Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF. Power Gain — 17.5 dB Drain Efficiency — 25% ACPR @ 750 kHz Offset — −46.5 dBc @ 30 kHz Bandwidth • Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts N−CDMA Output Power • Characterized with Series Equivalent Large−Signal Impedance Parameters • Internally Matched, Controlled Q, for Ease of Use • Integrated ESD Protection • Low Gold Plating Thickness on Leads, 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 880 MHz, 40 W AVG., 26 V SINGLE N−CDMA LATERAL N−CHANNEL RF POWER MOSFETs CASE 465B−03, STYLE 1 NI−880 MRF9200LR3 CASE 465C−02, STYLE 1 NI−880S MRF9200LSR3 Table 1. Maximum Ratings Symbol Value Unit Drain−Source Voltage Rating VDSS −0.5, +65 Vdc Gate−Source Voltage VGS −0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 625 3.6 W W/°C Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ 200 °C CW Operation Case Temperature 60°C Case Temperature 80°C CW W 200 160 Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 60°C, 200 W CW Case Temperature 80°C, 40 W CW Symbol RθJC Value (1,2) 0.28 0.34 Unit °C/W 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes − AN1955. NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2004. All rights reserved. Freescale Semiconductor Wireless RF Product Device Data MRF9200LR3 MRF9200LSR3 5−1 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model (per JESD22−A114) 1C (Minimum) Machine Model (per EIA/JESD22−A115) B (Minimum) Charge Device Model (per JESD22−C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate−Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 1.5 2.7 3.5 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 2400 mAdc) VGS(Q) 3 3.7 4.5 Vdc Drain−Source On−Voltage (VGS = 10 Vdc, ID = 6.0 Adc) VDS(on) — 0.25 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6.7 Adc) gfs — 8.8 — S Crss — 2.5 — pF Characteristic Off Characteristics On Characteristics Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ = 2400 mA, Pout = 40 W Avg. N−CDMA, f = 880 MHz, Single−Carrier N−CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF. Power Gain Gps 16 17.5 — dB Drain Efficiency ηD 22 25 — % ACPR — −46.5 −45 dBc IRL — −13 −9 dB Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF9200LR3 MRF9200LSR3 2 Freescale Semiconductor Wireless RF Product Device Data 0.015″ x 0.083″ Microstrip 0.048″ x 0.083″ Microstrip 0.352″ x 0.083″ Microstrip 0.086″ x 0.050″ Microstrip 0.367″ x 0.050″ Microstrip 0.417″ x 0.115″ Microstrip 0.068″ x 0.397″ Microstrip Z8 Z9 Z10 Z11 Z12 Z13 0.335″ x 0.397″ Microstrip 0.134″ x 0.825″ x 0.090″ Taper 0.209″ x 0.825″ Microstrip 0.148″ x 0.825″ Microstrip 0.148″ x 0.750″ Microstrip 0.435″ x 0.750″ Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z14 Z15 Z16 Z17 Z18 PCB 0.197″ x 0.750″ x 0.111″ Taper 0.331″ x 0.115″ Microstrip 0.557″ x 0.830″ Microstrip 0.078″ x 0.830″ Microstrip 0.414″ x 0.750″ Microstrip Arlon, 0.030″, εr = 2.56 Figure 1. MRF9200LR3(SR3) Test Circuit Schematic MRF9200LR3 MRF9200LSR3 Freescale Semiconductor Wireless RF Product Device Data 3 CUT OUT AREA !"# $%& !"# $%& Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF9200LR3(SR3) Test Circuit Component Layout Table 5. MRF9200LR3(SR3) Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1 RF Bead, Surface Mount (0603) 2506033007Y0 Fair−Rite B2 RF Bead, Surface Mount (0805) 2508051107Y0 Fair−Rite C1 2.2 pF Chip Capacitor (0603) GQM1885C2A2R2CB01B Murata C2, C19 47 pF Chip Capacitors (0805) GQM2195C1H470JB01B Murata C3 2.0 pF Chip Capacitor (0603) GQM1885C2A2R0BB01B Murata C4, C18 0.4−2.5 pF Variable Capacitors 27283PC Gigatronics C5 8.2 pF Chip Capacitor (0603) GQM1885C1H8R2DB01B Murata C6, C12 0.8−8.0 pF Variable Capacitors 27291SL Gigatronics C7, C8 12 pF Chip Capacitors (0603) GQM1885C1H120JB01B Murata C9, C10 10 pF Chip Capacitors (0805) GQM2195C2A100JB01B Murata C11 5.1 pF Chip Capacitor (0805) GQM2195C2A5R1DB01B Murata C13 3.3 pF Chip Capacitor (0805) GQM2195C2A3R3CB01B Murata C14, C17 1.5 pF Chip Capacitors (0805) GQM2195C2A1R5CB01B Murata C15, C16 22 pF Chip Capacitors (0805) GQM2195C1H220JB01B Murata C20 0.56 µF Chip Capacitor (1825) C1825C564J5RAC Kemet C21, C22, C31 2.2 µF Chip Capacitors (1825) C1825C225J5RAC Kemet C23 10 µF, 50 V Tantalum Chip Capacitor 522Z−050/100MTRE Tecate C24, C25, C26, C27 22 µF, 35 V Tantalum Chip Capacitors T491X226K035AS Kemet C28 330 µF, 63 V Electrolytic Capacitor NACZF331M100V (18X22) Nippon C29 10 µF Chip Capacitor (1206) GRM31MF51A106ZA01B Murata C30 0.01 µF Chip Capacitor (1825) C1825C103J1RAC Kemet C32, C33 22 µF, 25 V Tantalum Chip Capacitors ECS−T1ED226R Panasonic TE series C34 47 µF, 16 V Tantalum Chip Capacitor T491D476K016AS Kemet L1 22 nH Chip Inductor (0805) L0805220JEW AVX L2 8 nH Inductor A03T−5 CoilCraft R1 510 W, 1/10 W Chip Resistor (0805) Dale/Vishay R2, R3 11 W, 1/8 W Chip Resistors (1206) Dale/Vishay MRF9200LR3 MRF9200LSR3 4 Freescale Semiconductor Wireless RF Product Device Data TYPICAL CHARACTERISTICS 4 *,' 567 4 8 )%9&+' 0 4 : 3 3 ";57' <#,' !9"#9' !//", 5*$. =569= & & -. & 3 3 & 3 3 & & 3 3 3 3 3 3 3 3 /' (0( )12+ ' ( )*+ -.' 8( )*+ ηD & )*,+' )*,+ & η' (( )>+ & & ηD -. & 3 & & & & 3 3 4 *,' 567 4 8 )%9&+' 0 4 : 3 3 ";57' <#,' !9"#9' !//", 5*$. =569= 3 3 3 3 3 )*,+' )*,+ -.' 8( )*+ & 3 3 3 3 3 /' (0( )12+ ' ( )*+ η' (( )>+ Figure 3. Single−Carrier N−CDMA Broadband Performance @ Pout = 40 Watts Avg. Figure 4. Single−Carrier N−CDMA Broadband Performance @ Pout = 85 Watts Avg. -.' 8( )*+ & : & : & & 4 *, / 4 12' / 4 & 12 ?535#$ $!.6$:$#7. @12 5#$ -!,"#9 : ' 1 ( ( )*,+ 3 0 4 : 3 : 3 : 0 4 : 3 3 3 : 4 *, / 4 12' / 4 & 12 ?535#$ $!.6$:$#7.' @12 5#$ -!,"#9 3 3 567' 8( )8+ ( 567' 8( )8+ ( Figure 5. Two−Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power MRF9200LR3 MRF9200LSR3 Freescale Semiconductor Wireless RF Product Device Data 5 3 ' ( )*,+ ' ( )*,+ TYPICAL CHARACTERISTICS 4 *, / 4 12' / 4 & 12 ?535#$ $!.6$:$#7.' $#7$ $A6$#,< 4 12 3 3 * *$ 3 3 7= *$ 3 3 7= *$ 3 3 * *$ 3 3 7= *$ 3 7= *$ 4 *,' 567 4 8 )(+' 0 4 : ?535#$ $!.6$:$#7.' $#7$ $A6$#,< 4 12 3 & 567' 8( )8+ ( 83( )12+ Figure 7. Intermodulation Distortion Products versus Output Power Figure 8. Intermodulation Distortion Products versus Tone Spacing 567' 8( )*:+ *$!; * 4 & *: ) 8+ * 4 & *: )& 8+ ,76!; 4 *,' 0 4 : 6;.$* 8' µ.$,)5#+' :.$,)5//+ $#7$ $A6$#,< 4 12 "#' 8( )*:+ 4 *,' 0 4 :' / 4 12 3 3 ";57' <#,' !9"#9' !//", 5*$. =569= 3 -. 3 3 3 ηD 3 ' B( 1( 8( )*,+ ' 1( 8( )*,+ η' (( )>+' -.' 8( )*+ Figure 9. Pulse CW Output Power versus Input Power 567' 8( )8+ & Figure 10. Single−Carrier N−CDMA ACPR, ALT1, Power Gain and Drain Efficiency versus Output Power MRF9200LR3 MRF9200LSR3 6 Freescale Semiconductor Wireless RF Product Device Data TYPICAL CHARACTERISTICS Gps -.' 8( )*+ 4 *, 0 4 : / 4 12 ηD η, DRAIN EFFICIENCY (%) 567' 8( )8+ 8 Gps -.' 8( )*+ ηD 4 *,' 0 4 : / 4 12' / 4 & 12 ?535#$ $!.6$:$#7.' @12 5#$ -!,"#9 3 3 IMD 3 η' (( )>+ ' ( )*,+ Figure 11. Power Gain and Drain Efficiency versus CW Output Power 567' 8( )8+ ( Figure 12. Power Gain, Efficiency and IMD versus Output Power -.' 8( )*+ 4 0 4 : / 4 12 567' 8( )8+ 8 Figure 13. Power Gain versus Output Power MRF9200LR3 MRF9200LSR3 Freescale Semiconductor Wireless RF Product Device Data 7 TYPICAL CHARACTERISTICS )1 E + B' B ((( )°+ =". !C5%$ 9!-= *".-;!<. ,!;,6;!7$* "# =56. D !:-$$ *!"# ,6$#7& "/$ 7$.7. !7 $;$%!7$* 7$:-$!76$. =!%$ ,5$;!7$* 75 C$77$ 7=!# ±> 5/ 7=$ 7=$5$7",!; -$*",7"5# /5 :$7!; /!";6$& "%"*$ /!,75 C< /5 "# ! -!7",6;! !--;",!7"5#& Figure 14. MTTF Factor versus Junction Temperature TYPICAL CHARACTERISTICS N−CDMA TEST SIGNAL 3 3 3 3 & 3 )";57' <#,' !9"#9' !//", 5*$. =569= + & 12 =!##$; !#*?"*7= !"$.& $!.6$* "# @12 !#*?"*7= F ± @12 //.$7& $!@G%9& 4 & * F &> 5C!C";"7< 5# & & & )*+ )>+ & 12 =!##$; 8 3 3 3 3 3 F @12 #7$9!7$* 8 3 & (H33(( )*+ Figure 15. Single−Carrier CCDF N−CDMA F @12 #7$9!7$* 8 3 3 3& 3& 3& 3& 3& & & & & & /' (0( )12+ Figure 16. Single−Carrier N−CDMA Spectrum MRF9200LR3 MRF9200LSR3 8 Freescale Semiconductor Wireless RF Product Device Data 5 4 Ω / 4 12 / 4 12 ;5!* .56,$ / 4 12 / 4 12 4 *,' 0 4 :' 567 4 8 %9& 3 f MHz Zsource Ω Zload Ω 865 0.98 − j1.41 1.30 − j1.66 880 0.96 − j1.23 1.36 − j1.58 895 0.94 − j1.06 1.40 − j1.50 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. 67-67 !7,="#9 $7?5@ $%",$ #*$ $.7 #-67 !7,="#9 $7?5@ Z source Z load Figure 17. Series Equivalent Source and Load Impedance MRF9200LR3 MRF9200LSR3 Freescale Semiconductor Wireless RF Product Device Data 9 NOTES MRF9200LR3 MRF9200LSR3 10 Freescale Semiconductor Wireless RF Product Device Data PACKAGE DIMENSIONS B G 2X 1 Q CCC (I & ( ( ( & 3& & (I 1& & ( 1 (( & )&+ 8 H( & & ((( B (FLANGE) 3 K 2 CCC CCC D M (INSULATOR) ,,, ,,, N R S (LID) !!! (LID) (INSULATOR) H C T A A (FLANGE) SEATING PLANE (I & ( ( ( & 3& & (I 1& & ( 1 (( & )&+ 8 H( & 1 B (FLANGE) 2 CCC CCC D M (INSULATOR) R ,,, N ,,, MILLIMETERS MIN MAX & & & & & & & & & & & & &J & & & & & & & & & & & & & & &J( & J( &J( CASE 465B−03 ISSUE B NI−880 MRF9200LR3 B K INCHES MIN MAX & & & & & & & & & & & & &J & & & & & & & & & & & & & & &J( &J( & J( ( I & & ( & ( F E DIM A B C D E F G H K M N Q R S aaa bbb ccc S (LID) !!! (LID) (INSULATOR) H DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX & & & & & & & & & & & & & & & & & & & & & & & & &J( &J( & J( MILLIMETERS MIN MAX & & & & & & & & & & & & & & & & & & & & & & & & &J( & J( &J( ( I & & ( & ( C F E T A A (FLANGE) SEATING PLANE CASE 465C−02 ISSUE A NI−880S MRF9200LSR3 MRF9200LR3 MRF9200LSR3 Freescale Semiconductor Wireless RF Product Device Data 11 How to Reach Us: Home Page: www.freescale.com E−mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1−800−521−6274 or +1−480−768−2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004. All rights reserved. MRF9200LR3 MRF9200LSR3 Document Number: MRF9200L Rev. 1, 12/2004 5−12 Freescale Semiconductor Wireless RF Product Device Data