Fairchild NDS9435A 30v p-channel powertrench mosfet Datasheet

NDS9435A
30V P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
• –5.3 A, –30 V
Applications
• Fast switching speed
• Power management
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 50 mΩ @ VGS = –10 V
RDS(ON) = 80 mΩ @ VGS = –4.5 V
• Low gate charge
• Load switch
• Battery protection
• High power and current handling capability
DD
DD
DD
DD
G
SS G
S
SS S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current
–5.3
A
– Continuous
(Note 1a)
– Pulsed
–50
Power Dissipation for Single Operation
PD
TJ, TSTG
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
1
Operating and Storage Junction Temperature Range
W
–55 to +175
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
NDS9435A
NDS9435A
13’’
12mm
2500 units
2002 Fairchild Semiconductor Corporation
NDS9435A Rev E(W)
NDS9435A
January 2002
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
VGS = 0 V, ID = –250 µA
–30
V
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = –24 V,
VGS = 0 V
–1
µA
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
VGS = 25 V,
VGS = –25 V
VDS = 0 V
VDS = 0 V
100
–100
nA
nA
–3
V
On Characteristics
ID = –250 µA, Referenced to 25°C
–23
mV/°C
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = –250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = –250 µA, Referenced to 25°C
4.5
VGS = –10 V,
ID = –5.3 A
VGS = –4.5 V, ID = –4 A
VGS= –10 V, ID = –5.3 A, TJ=125°C
42
65
57
–1
ID(on)
On–State Drain Current
VGS = –10 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –5.3 A
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
–1.7
mV/°C
50
80
77
–25
mΩ
A
10
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
528
pF
132
pF
70
pF
(Note 2)
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
7
14
ns
13
24
ns
ns
td(off)
Turn–Off Delay Time
14
25
tf
Turn–Off Fall Time
9
17
ns
Qg
Total Gate Charge
10
14
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –15 V,
VGS = –10 V
ID = –4 A,
2.2
nC
2
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –2.1 A
Voltage
(Note 2)
–0.8
–2.1
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDS9435A Rev E(W)
NDS9435A
Electrical Characteristics
NDS9435A
Typical Characteristics
2
-ID, DRAIN CURRENT (A)
VGS = -10V
-6.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
-5.0V
-4.5V
20
-4.0V
10
-3.5V
-3.0V
0
1.8
VGS=-4.0V
1.6
-4.5V
1.4
-5.0V
-6.0V
-7.0V
1.2
-8.0V
0.8
0
1
2
3
4
5
6
0
6
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
24
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.25
1.6
ID = -5.3A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
18
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = -2.8A
0.2
0.15
TA = 125oC
0.1
TA = 25oC
0.05
0
-50
-25
0
25
50
75
100
125
150
175
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
100
25oC
TA = -55oC
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
-ID, DRAIN CURRENT (A)
-10V
1
12
125oC
9
6
3
0
1
1.5
2
2.5
3
3.5
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4.5
VGS =0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS9435A Rev E(W)
NDS9435A
Typical Characteristics
800
ID = -5.3A
VDS = -5V
f = 1 MHz
VGS = 0 V
700
-10V
8
-15V
CAPACITANCE (pF)
-VGS , GATE-SOURCE VOLTAGE (V)
10
6
4
2
600
CISS
500
400
300
COSS
200
100
0
0
2
4
6
8
CRSS
0
10
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
15
20
25
30
Figure 8. Capacitance Characteristics.
50
P(pk), PEAK TRANSIENT POWER (W)
100
100µs
-ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
RDS(ON) LIMIT
1ms
10
10ms
100ms
1s
1
10s
DC
VGS = -10V
SINGLE PULSE
RθJA = 125oC/W
0.1
TA = 25oC
0.01
0.1
1
10
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
100
0.01
-VDS, DRAIN-SOURCE VOLTAGE (V)
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
0.1
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
o
RθJA = 125 C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
NDS9435A Rev E(W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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