FUJITSU DKF110PFW1LPG

MBF110
Solid-State Fingerprint Sensor
Packages
Overview
The Fujitsu MBF110 Solid-State Fingerprint Sensor is a direct
contact, fingerprint acquisition device. It is a high performance,
low power, low cost, capacitive sensor with an integrated twodimensional array of metal electrodes in the sensing array. Each
metal electrode acts as one plate of a capacitor and the contacting
finger acts as the second plate. A passivation layer on the device
surface forms the dielectric between these two plates. Ridges and
valleys on the finger yield varying capacitor values across the array,
which is read to form an image of the fingerprint.
80-pin SOP (VSPA)
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80-pin TSOP (LQFP)
A block diagram of the MBF110 is shown in Figure 1. The
MBF110 has an integrated 8-bit flash analog-to-digital converter
The MBF110 is manufactured in standard CMOS technology and
to digitize the output of the sensor array. The fingerprint image is
is available in an 80-pin, VSPA 80/1 and LQFP 80/1. The 300 ×
transmitted on an 8-bit bi-directional bus interface compatible
300 sensor array has a 50 µm pitch and yields a 500-dpi image. The
with most microprocessors.
sensor surface is protected by a patented, ultra-hard, abrasion and
For SETCUR resistor differences between the MBF110 see the Pin
chemical resistant coating.
Information table.
Features
• Non-optical solid-state device
Applications
• Database and network access
• 300 × 300 sensor array, 50 µm pitch
• Portable fingerprint acquisition
• 1.5 cm × 1.5 cm sensor area
• Access control (home, auto, office, etc.)
• 500-dpi resolution
• ATM
• Operation from 3V to 5.5V
• Smart cards
• Ultra-hard protective coating
• Cellular phone security access
• Integrated 8-bit flash analog-to-digital converter
• 8-bit microprocessor interface
• Standard CMOS technology
• Low power, less than 200 mW
MBF110
Table of Contents
Chip Operation .....................................................................................................................................................................1
Special Features ....................................................................................................................................................................2
MBF110 Pin Information for SOP 80/1 .................................................................................................................................. 2
MBF110 Connection Diagram ................................................................................................................................................3
Function Table ......................................................................................................................................................................4
Register Map ........................................................................................................................................................................4
Address Register Descriptions .................................................................................................................................................4
RAL (A3-A0 Address 0000) Write Only .............................................................................................................................4
Low Order Row Address Register ................................................................................................................................4
RAH (A3-A0 Address 0001) Write Only ............................................................................................................................5
High Order Row Address Register ...............................................................................................................................5
CAL (A3-A0 Address 0010) Read/Write.............................................................................................................................5
Low Order Column Address Register ...........................................................................................................................5
CAH (A3-A0 Address 0011) Write Only .............................................................................................................................6
High Order Column Address Register ..........................................................................................................................6
DTR (A3-A0 Address 0100) Write Only .............................................................................................................................6
Discharge Time Register ............................................................................................................................................6
DCR (A3-A0 Address 0101) Write Only .............................................................................................................................7
Discharge Current Register........................................................................................................................................7
RSR (A3-A0 Address 0110) Write Only ..............................................................................................................................7
Reserved..................................................................................................................................................................7
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Row Capture and A/D Conversion Timing .................................................................................................................................8
A/D Converter ......................................................................................................................................................................8
Specifications ........................................................................................................................................................................8
Absolute Maximum Ratings ....................................................................................................................................................8
Operating Range ...................................................................................................................................................................8
DC Electrical Characteristics ..................................................................................................................................................8
Power Supply Characteristics,
(VDD = 5.5V, fOSC = 40 MHz Standard Temperature Range)..................................................................................................9
Power Supply Characteristics,
(VDD = 3.6V, Commercial Temperature Range, fOSC = 20 MHz ) ............................................................................................9
Read Cycle Timing at VDD = 3.0V, Standard Temperature Range................................................................................................10
Write Cycle Timing at VDD = 3.0V, Standard Temperature Range...............................................................................................11
Power Up and Initialization..................................................................................................................................................12
Image Capture ....................................................................................................................................................................13
Microelectronics,
Inc.
Fujitsu Fujitsu
Microelectronics,
Inc. -1
Solid-State Fingerprint Sensor
MBF110 – PFW1, SOP (VSPA) – 80 pin Package .................................................................................................................. 14
MBF110 – PFW, TSOP (LQFP) – 80 pin Package .................................................................................................................. 15
MBF110 Solder Pad Layout................................................................................................................................................. 16
Manufacturing Considerations.............................................................................................................................................. 17
Array Pixel Specifications .................................................................................................................................................... 17
MBF110 Ordering Information ............................................................................................................................................ 18
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0 Microelectronics,
Fujitsu
Fujitsu Microelectronics,
Inc.
Inc.
MBF110
SETCUR
DCR
RAH
300 x 300
Sensor Arrays
RAL
A[3:0]
CE1
CE2
SELECT
LOGIC
RD
CAH
MUX
Temperature
Sensor
8 Bit A/D
Resistance
Sensor
CAL
WR
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RSENSE
RSR
D[7:0]
DATA
BUS
BUFFER
TEST
XTAL1
XTAL2
ENCLK
OSCILLATOR
CLK OUT
Figure 1.
Chip Operation
CONTROL LOGIC
DTR
CLK
MBF110 Block Diagram
The sensor array is composed of 300 rows and 300 columns of sensor
plates. Associated with each column are two sample-and-hold
circuits. A fingerprint image is sensed or captured one row at a time.
This“row capture”occurs in two phases. In the first phase, the
sensor plates of the selected row are pre-charged to the VDD voltage.
During this pre-charge period, an internal signal enables the first set
of sample-and-hold circuits to store the pre-charged plate voltages of
the row.
In the second phase, the row of sensor plates is discharged with a
current source. The rate at which a cell is discharged is proportional
to the“discharge current.”After a period of time (referred to as the
“discharge time”), an internal signal enables the second set of
sample-and-hold circuits to store the final plate voltages. The
difference between the pre-charged and discharged plate voltages is a
measure of the capacitance of a sensor cell. After the row capture, the
cells within the row are ready to be digitized.
The sensitivity of the chip is adjusted by changing the discharge
current and discharge time. The nominal value of the current source
is controlled by an external resistor connected between the SETCUR
pin and ground. The current source is controlled from the Discharge
Current Register (DCR). The discharge time is controlled by the
Discharge Time Register (DTR).
The sensor array is a row-oriented device. Images are read out one
row at a time. The High-Order Row Address Register (RAH) and the
Low-Order Row Address Register (RAL) must be programmed to
select a row to be captured. Writing to RAL initiates a row capture.
The capture time is a function of the external clock and the DTR.
After the discharge cycle, the outputs of the row elements will be
stored in analog sample and hold circuits.
Fujitsu Microelectronics, Inc.
1
Solid-State Fingerprint Sensor
After the row capture is completed, the High-Order Column Address
Register (CAH) and Low-Order Column Address Register (CAL)
must be programmed to select an element within the captured row to
be digitized. Writing to CAL causes the analog-to-digital (A/D)
converter to digitize the difference between the outputs of the two
sample-and-holds of the selected column cell. The output of the A/D
converter is accessed by reading the CAL register.
Rows can be accessed in any order; however, the selected row must be
captured before the column cells are read. The column cells within a
row can be accessed in any order.
Special Features
There are two programmable open-drain outputs that can be used
for driving LEDs.
The CLKOUT pin can be enabled to output a square-wave clock of
the same frequency as the oscillator clock. CLKOUT can be used to
drive external circuitry. When ENCLK is high, the clock signal is
present at the CLKOUT pin. When ENCLK is low or unconnected,
the CLKOUT output is held low.
MBF110 Pin Information for SOP (VSPA) 80/1
2
Pin
Pin
Number
Name
34
A3
35
A2
36
A1
37
A0
38
CE1
39
CE2
40
RD
17
WR
18
D7
19
D6
21
D5
22
D4
24
D3
25
D2
26
D1
Type
Input
Bi-directional
Description
Notes
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Address Inputs
Address signals connected to these pins select a register to read from or write to during data transfer.
Chip Enable, Active Low
When CE1 is low and CE2 is high, the chip is selected.
Chip Enable, Active High
When CE1 is low and CE2 is high, the chip is selected.
Read Enable, Active Low
This pin must be low while WR is high and the chip selected in order to read a register
on the chip.
Write Enable, Active Low
This pin must be low while the chip is selected to write to a register on the chip.
Data Bus
Inputs when WR is low and chip is selected. Outputs when RD is low, WR is high, and
chip is selected.
27
D0
32
CLKOUT
Output
Clock Output
This pin outputs the oscillator clock frequency when ENCLK is high.
31
ENCLK
Input
Enable Clock Output
A high on this pin enables the CLKOUT pin. A low on this pin holds CLKOUT low.
ENCLK has an internal pull-down resistor.
15
LED1
LED driver
This pin can be used to drive an LED.
Set Discharge Current
Place an external resistor R1 (200K – 680K ohms) between this pin and ground.
Typical: FPS110, R1 = 680K; FPS110B, R1 = 200K; FPS110E, R1 = 200K
Reserved pin
Must be left disconnected.
14
LED2
3
SETCUR
2
N/A
13
TEST
20, 33
VDD
1
VDDA
Fujitsu Microelectronics, Inc.
Open-drain
Output
Open-drain
Output
Input
Power
Digital Power Supply
Analog Power Supply
MBF110
MBF110 Pin Information for SOP (VSPA) 80/1 (Continued)
Pin
Pin
Number
Name
Type
Description
Notes
16, 23, 28
VSS
Ground
Digital ground
4, 5
VSSA
(Center)
Analog ground
29
XTAL1
Input
Input to the On-Chip
Oscillator
To use the internal oscillator connect a crystal circuit to this pin. If an external oscillator is used, its output is connected to this pin. XTAL1 is the clock source for internal
timing.
30
XTAL2
Output
Output of the On-Chip
Oscillator
To use the internal oscillator connect a crystal circuit to this pin. If an external oscillator is used, leave XTAL2 unconnected.
41-80
GNDSHLD
Shield Ground
Connected to Package Top
Plate
These pins should connect to chassis ground.
2, 6-12
N/A
N/A
Not connected.
MBF110 Connection Diagram
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VDDA
Reserved
SETCUR
VSSA
VSSA
Unconnected
Unconnected
Unconnected
Unconnected
Unconnected
Unconnected
Unconnected
TEST
LED2
LED1
VSS
WRD7
D6
VDD
D5
D4
VSS
D3
D2
D1
D0
VSS
XTAL1
XTAL2
ENCLK
CLKOUT
VDD
A3
A2
A1
A0
CE1CE2
RD-
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
43
42
41
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
GNDSHLD
Fujitsu Microelectronics, Inc.
3
Solid-State Fingerprint Sensor
Function Table
CE1
CE2
RD
WR
Mode
Data Lines
H
X
X
X
De-selected
High-Z
X
L
X
X
De-selected
High-Z
L
H
H
H
Standby
High-Z
L
H
L
H
Read
Data Out
L
H
H
L
Write
Data In
A3
A2
A1
A0
Access
Register
0
0
0
0
Write
RAL
0
0
0
1
Write
RAH
High Order Row Address Register
0
0
1
0
Read/Write
CAL
Low Order Column Address Register
0
0
1
1
Write
CAH
High Order Column Address Register
0
1
0
0
1
0
0
1
1
Register Map
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Write
DTR
Discharge Time Register
1
Write
DCR
Discharge Current Register
0
Write
RSR
Reserved
Low Order Row Address Register
Refer to Row Capture and A/D Conversion Timing on page 9 to
calculate row capture and A/D conversion times.
RAL (A3-A0 Address 0000) Write Only
4
Low Order Row Address Register
0
Address Register Descriptions
MSB
Description
This register and bit 0 of RAH form the 9-bit Row Address Register
that selects the row to be captured. The 9-bit Row Address Register
selects a row address from 0 through 299. Writing the RAL starts a
row capture. Only RAL has to be written if RAH doesn’t change,
otherwise RAH has to be written before RAL.
LSB
BIT7
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
RA7
RA6
RA5
RA4
RA3
RA2
RA1
RA0
Bit Number
Bit Name
[7:0]
RA[7:0]
Fujitsu Microelectronics, Inc.
Function
Low eight bits of Row Address Register.
MBF110
RAH (A3-A0 Address 0001) Write Only
High Order Row Address Register
Bit 0 of this register and RAL form the 9-bit Row Address Register
that selects the row to be converted. The L1 and L2 bits control two
open-drain outputs that can be used to drive LEDs.
MSB
LSB
BIT7
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
L1
L2
–
–
–
–
–
RA8
Bit Number
Bit Name
7
L1
6
L2
[5:1]
–
0
RA8
Function
L1=0, LED1 output low
L1=1, LED1 output high-Z
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L2=0, LED 2 output low
L2=1, LED 2 output high-Z
Reserved, write 0 to these bits.
MSB of Row Address
CAL (A3-A0 Address 0010) Read/Write
Low Order Column Address Register
CAL is a read/write register. Writing to this address writes to the
low-order 8 bits of the 9-bit Column Address Register. The 9-bit
Column Address Register selects a column from 0 through 299.
Writing to CAL causes the analog-to-digital (A/D) converter to
MSB
BIT7
BIT6
CA7
CA6
Bit Number
Bit Name
[7:0]
CA[7:0]
begin digitizing its input. The input of the A/D converter is selected
by bits 7 and 6 of the CAH register. The user should wait until the
row capture is completed before writing to the CAL.
Reading from this address returns the output of the A/D converter.
After writing to CAL, the user should wait until A/D conversion
completes before reading the A/D converter.
LSB
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
CA5
CA4
CA3
CA2
CA1
CA0
Function
(WRITE) Low eight bits of Column Address Register.
(READ) Output of A/D converter.
Fujitsu Microelectronics, Inc.
5
Solid-State Fingerprint Sensor
CAH (A3-A0 Address 0011) Write Only
High Order Column Address Register
Bit 0 of this register and CAL form the 9-bit Column Address
Register that selects a cell from the current row for digitizing.
The user should wait until the row capture is completed before
writing to CAH.
MSB
LSB
BIT7
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
R
T
–
–
–
–
–
CA8
Bit Number
Bit Name
[7:1]
–
0
CA8
Function
Reserved, write 0 to these bits.
MSB of Column Address Register
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DTR (A3-A0 Address 0100) Write Only
Discharge Time Register
MSB
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
PD
T6
T5
T4
T3
T2
T1
T0
Bit Number
Bit Name
7
PD
[6:0]
T[6:0]
Function
Power down chip.
PD=0, Chip in Normal Mode
PD=1, Chip in Low Power Mode
Selects the count to be loaded into the Discharge Timer. Discharge time is selected in increments of the
oscillator period. Discharge Time is defined as the period between the sampling and holding of the pre-charged
sensor cell to the sampling and holding of the discharging sensor cell. The Discharge Time can be calculated
from the following equation:
Discharge Time = T[6:0] * tOSC
6
LSB
BIT7
Fujitsu Microelectronics, Inc.
MBF110
DCR (A3-A0 Address 0101) Write Only
Discharge Current Register
MSB
LSB
BIT7
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
F2
F1
TRST
DC4
DC3
DC2
DC1
DC0
Bit Number
Bit Name
Function
These two bits tell the chip the frequency of the external oscillator or crystal that is connected to the chip.
[7:6]
F2
0
0
1
1
F2, F1
5
TRST
F1
0
1
0
1
XTAL Input
10-15 MHz
15-20 MHz
20-30 MHz
30-40 MHz
Timer Reset. Set this bit to halt and reset the Discharge Timer. Resetting the Discharge Timer is necessary to put
the Discharge Timer in a known state after power-up or after returning to Normal mode from Low-power mode
(See bit 7 of DTR).
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TRST=0,Normal Timer Operation
TRST=1,Halt and Clear Discharge Timer (doesn’t clear DTR)
[4:0]
DC[4:0]
Selects the Discharge Current source value.
RSR (A3-A0 Address 0110) Write Only
Reserved
The user must initialize this resistor to zero.
MSB
BIT7
BIT6
–
–
Bit Number
Bit Name
[7:0]
–
LSB
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
–
–
–
–
–
–
Function
Reserved. Write 0 to these bits.
Fujitsu Microelectronics, Inc.
7
Solid-State Fingerprint Sensor
Row Capture and A/D Conversion Timing
F2
F1
XTAL Input Range
Row Capture Time in OSC Clock Periods
A/D Conversion Time in OSC Clock Periods
0
0
10-15 MHz
18+n
13
0
1
15-20 MHz
24+n
15
1
0
20-30 MHz
36+n
23
1
1
30-40 MHz
48+n
30
NOTE: n is selected by bits T[6:0] of DTR.
A/D Converter
Specifications*
The integrated 8-bit flash A/D converter is a buffered device. Each
write to CAL causes: 1) the result of the previous conversion to be
latched and made readable at CAL, and 2) the A/D converter to start
digitizing its current input. Consequently, it takes 301 writes to
CAL in order to digitize the 300 cells of a row.
*All specifications in this document are preliminary and subject to
change.
Absolute Maximum Ratings
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• Storage Temperature:
-65° to +150° C
• DC Voltage Applied to any Pins: -0.5 V to +7.0 V
Operating Range
Symbol
Parameter
VDD
Digital Supply Voltage
VDDA
Analog Supply Voltage
fOSC
8
Max
Unit
+3.0
+5.5
V
+3.0
+5.5
V
Standard Temperature Range
0
60
°C
Oscillator Frequency VDD = 5.0V
VDD = 3.0V
10
40
MHz
10
20
MHz
DC Electrical Characteristics
Symbol
Min
Parameter
Test Conditions
Min
Max
Unit
VOH
Output High Voltage
VDD = 4.5V, IOH = -4 mA
2.4
–
V
VOL
Output Low Voltage
VDD = 4.5V, IOL = 8 mA
–
0.4
V
VOH
Output High Voltage
VDD = 3.0V, IOH = -2 mA
VOL
Output Low Voltage
VDD = 3.0V, IOL = 4 mA
VIH
Input High Voltage
VIL
Input Low Voltage
VDD = 4.5V
VIL
Input Low Voltage
VDD = 3.00
-0.5
0.6
V
ILI
Input Leakage Current
GND ≤ Vin ≤ 5.5V
-5.0
5.0
µA
ILO
Output Leakage Current
GND ≤ Vout ≤ 5.5V
-5.0
5.0
µA
Fujitsu Microelectronics, Inc.
2.4
-
V
–
0.4
V
2.0
VDD
V
-0.5
0.8
V
MBF110
Power Supply Characteristics
(VDD = 5.5V, fOSC=40 MHz Standard Temperature Range)
Typ
Symbol
Parameter
Max
Test Conditions
Unit
LP
STD
LP
STD
IDD1
Power down with CLKOUT disabled, (DTR bit 7 = 1, ENCLK = 0)
<1
100
50
100
µA
IDD2
Power down with CLKOUT enabled.
( DTR bit 7 = 1, ENCLK = 1)
17
20
20
25
mA
IDD3
Idle with CLKOUT disabled.
(DTR bit 7 = 0, ENCLK = 0)
8
10
12
15
mA
Idle with CLKOUT enabled.
( DTR bit 7 = 0, ENCLK = 1)
17
20
20
25
mA
IDD5
Active A/D conversion with CLKOUT disabled.
(DTR bit 7 = 0, ENCLK = 0)
15
20
25
30
mA
IDD6
Active A/D conversion with CLKOUT enabled.
(DTR bit 7 = 0, ENCLK = 1)
25
30
30
35
mA
Power down with CLK disabled or enabled.
(DTR bit 7 = 1)
<10
<100
50
1000
µA
IDLE with CLKOUT disabled or enabled,
(DTR bit 7 = 0)
15
20
22
25
mA
Active A/D conversion with CLKOUT disabled or enabled. (DTR bit 7 = 0)
18
22
26
30
mA
IDD4
IDDA
Digital Supply Current
Analog Supply Current
Note: Analog supply currents are independent of fOSC
Note: XTAL2 & CLKOUT driving CLOAD = 50pF
Power Supply Characteristics
Symbol
Parameter
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VDD = 3.6V, Commercial Temperature Range, fOSC = 20 MHz
Typ
Max
Test Conditions
Unit
LP
STD
LP
STD
IDD1
Power down with CLKOUT disabled.
(VDD = max, fOSC = max, DTR bit 7 = 1, ENCLK = 0)
<1
<10
50
100
µA
IDD2
Power down with CLKOUT enabled.
(VDD = max, fOSC = max, DTR bit 7 = 1, ENCLK = 1)
6
10
10
15
mA
IDD3
Idle with CLKOUT disabled.
(VDD = max, fOSC = max, DTR bit 7 = 0, ENCLK = 0)
3
5
6
10
mA
IDD4
Idle with CLKOUT enabled.
(VDD = max, fOSC = max, DTR bit 7 = 0, ENCLK = 1)
6
10
10
15
mA
IDD5
Active A/D conversion with CLKOUT disabled.
(VDD = max, fOSC = max, DTR bit 7 = 0, ENCLK = 0)
6
10
10
15
mA
IDD6
Active A/D conversion with CLKOUT enabled.
(VDD = max, fOSC = max, DTR bit 7 = 0, ENCLK = 1)
9
13
13
18
mA
Power down with CLK disabled or enabled.
(VDDA = max, DTR bit 7 = 1)
<2
<10
50
1000
µA
IDLE with CLKOUT disabled or enabled, (DTR bit 7 = 0)
10
15
15
20
mA
Active A/D conversion with CLKOUT disable or enable. (DTR bit 7 = 0)
12
15
18
25
mA
Digital Supply Current
IDDA
Analog Supply Current
Note: Analog supply currents are independent of fOSC
Note: XTAL2 & CLKOUT driving CLOAD = 50 Pf
Fujitsu Microelectronics, Inc.
9
Solid-State Fingerprint Sensor
Read Cycle Timing at VDD = 3.0V, Standard Temperature Range
Parameter
Description
Min
Max
Unit
tAAC
tRC
Address valid to data valid.
–
70
ns
Read Cycle Time
70
–
ns
tACE1
CE1 low to data valid
–
70
ns
tACE2
CE2 high to data valid
–
70
ns
tDOE
RD low to data valid
–
35
ns
tLZOE
RD low to low Z
5
–
ns
tHZOE
RD high to high Z
–
30
ns
tLZCE
CE1 low and CE2 high to low Z
5
–
ns
tHZCE
CE1 high to high Z or CE2 low to high Z
–
30
ns
tLZWE
WR high to low Z
5
–
ns
tHZWE
WR low to high Z
–
30
ns
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t AAC
A[3:0]
t RC
CE1
t ACE1
t ACE2
CE2
t DOE
RD
WR
t HZOE
t LZWE
t HZWE
t LZOE
DATA OUT
High Z
Data Valid
t LZCE
Figure 2.
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Fujitsu Microelectronics, Inc.
t HZCE
Read Cycle Timing
MBF110
Write Cycle Timing at VDD = 3.0V, Standard Temperature Range
Parameter
Description
Min
Max
Unit
70
–
ns
tWC
Write Cycle
tSCE1
CE1 low to write end
60
–
ns
tSCE2
CE2 high to write end
60
–
ns
tAW
Address setup to write end
55
–
ns
tHA
Address hold from write end
5
–
ns
tSA
Address set-up to write start
5
–
ns
tPWE
WR Pulse Width
40
–
ns
tSD
Data setup to write end
35
–
ns
tHD
Data hold from write end
5
–
ns
t SA
A[3:0]
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t HA
t AW
t SCE1
CE1
CE2
RD
WR
t SCE2
t PWE
t SD
DATA IN
Figure 3.
t HD
Write Cycle Timing
Fujitsu Microelectronics, Inc.
11
Solid-State Fingerprint Sensor
Power Up and Initialization
Power-Up
Write DTR with PD bit set
Wait 1 µs
Write DTR with
PD bit clear
Wait 10 µs
Wait for chip to power down.
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Write DCR with TRST set
Write DCR with
TRST clear
Clear RSR
Initialization Done
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Fujitsu Microelectronics, Inc.
Set DTR[7] (PD) to power down device.
Clear DTR[7] (PD) to return from power-down.
DTR[6:0] initialized to known values.
Wait for chip to return from power-down.
Set DCR[5] (TRST) to halt and reset the discharge
timer.
Clear TRST for normal dicharge timer operation.
DCR[4:0] initialized to known values.
Initialize RSR to zero.
MBF110
Image Capture
Begin
Image
Capture
Write RAH if needed
Write RAL
Needed if new value to be written
differs from current RAH contents
Initiates row capture.
Wait until row capture
completes
First A/D conversion
of image
Yes
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Write CAH
No
Write CAL
Initiates first A/D conversion.
Wait until A/D conversion
completes
No
No
Write CAH if needed
Needed if new value to be written
differs from current CAH contents
Write CAL
Initiates A/D conversion and
transfers previous result to output
buffer.
Wait until A/D conversion
completes
Read CAL
Read output buffer.
Converted
all cells in current
row?
Yes
Converted
last cell of image
Yes
Write CAL
Needed to transfer result of last
A/D conversion to output buffer.
Read CAL
Read value of last cell.
Image Captured
Fujitsu Microelectronics, Inc.
13
Solid-State Fingerprint Sensor
MBF110 – PFW1
SOP (VSPA) – 80 pin Package
MBF110-PFW1: SOP 80pin Assembly Diagram
E1
A
Row 299
Column 0
Row 299
Column 299
D1
D
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Detail Z
Row 0
Column 0
Row 0
Column 299
1
40
B
F
A1
L1
C
DETAIL Z
MBF110 Dimensions
Symbol
N
A
A1
B
C
D
D1
E1
F
L1
Description
Pin Count
Overall Height
Stand Off
Pin Width
Pin Thickness
Tip to tip Dimension
Package Body
Package Body
Pin Pitch
Foot length
Note: Dimensions are in inches (mm)
14
Fujitsu Microelectronics, Inc.
Min
1.016 (25.8)
.941 (23.9)
.941 (23.9)
.0187 (.47)
Nom
80
.102 (2.60)
.006 (.15)
.008 (.20)
.008 (.20)
1.025 (26.0)
.945 (24.0)
.945 (24.0)
.0197 (.50)
.032 (.81)
Max
1.032 (26.2)
.949 (24.1)
.949 (24.1)
.0207 (.53)
MBF110
MBF110 – PFW
TSOP (LQFP)– 80 pin Package
MBF110-PFW: TSOP 80pin Assembly Diagram
D1
SEE DETAIL “B”
D3
A A
A2
ddd
E3
E1
1
E
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SENSOR ARRAY
1.00 DIA.
PIN NO. 1 IDENTIFIER
1
40
A
SEATING
PLANE
A1
15° TYP
H
C
SEATING
PLANE
2
ddd
1.40 ±0.05
e
b
D.25 REF. PLANE
3°-5°
L
L1
DETAIL “B”
MBF110PFW
DIMENSIONS
Symbol Description
Min.
A
A1
A2
b
D1
D3
ddd
E
E1
E3
e
L
L1
1.45
0.10
1.35
0.16
Overall Height
Stand Off
Package Thickness
Lead Width
Package Body
Sensor Array Width
Sensor Array Depth
Tip to Tip Dimension
Package Body
Sensor Array Height
Lead Pitch
Lead Length
Foot Length
14.95
0.25
14.95
0.50
Millimeters
Nom.
1.55
0.15
1.40
0.25
24.00 BSC.
15.00
0.30
26.00 BSC.
24.00 BSC.
15.00
0.50 TYP.
0.60
1.00 REF.
Max.
Min.
1.70
0.25
1.45
0.30
0.57
.004
.053
.006
15.05
0.35
.588
.010
15.05
.588
0.70
.020
Inches
Nom.
0.61
.006
.055
.010
.945 BSC.
.590
.012
1.024 BSC.
.945 BSC.
.590
.0197 TYP.
.024
.039 REF.
Max.
0.67
.010
.057
.012
.592
.014
.592
.028
Fujitsu Microelectronics, Inc.
15
Solid-State Fingerprint Sensor
MBF110 Solder Pad Layout
See Detail Z
P
Full Radius
Typical
L
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A
1
40
Symbol
Description
N
Pin Count
A
Tip to Tip Dimension
P
Pitch
Pad Length
L
Pad Width
W
Note: Dimensions are in inches (mm)
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Fujitsu Microelectronics, Inc.
Dimension
80
1.074 (27.30)
.0197 (.50)
.065 (1.65)
.012 (.30)
W
MBF110
Manufacturing Considerations
CAUTION: DO NOT USE ANY METAL PICKUP TOOLS WHICH WOULD CONTACT THE SENSOR DEVICE SURFACE WITHOUT
PROTECTIVE LID INSTALLED
• Surface Mount reflow temperature:
Recommended
Max Temp
220°C Max reflow spike*
240°C
• Avoid any high pressure spray directly to the sensor device surface.
• Use standard handling practices for ESD sensitive devices.
• Refer to Fujitsu PCB Assembly for Biometric Sensor Guidelines.
Array Pixel Specifications:
Specification
Max Failed Pixels
Max Failed Rows
Max Failed Columns
Notes:
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MBF110-LP
MBF110-STD
10
300
0
1 (see note 1)
0
1 (see note 1)
1) Failing rows or columns that fall on rows (0-4) or (295-299) or columns (0-4) or (295-299) are allowed to pass for the STD product due to packaging overlap at the edge of the
sensor array. Failed rows or columns at the extreme edge of the array do not affect the quality of the acquired fingerprint image.
Fujitsu Microelectronics, Inc.
17
Solid-State Fingerprint Sensor
MBF110 Ordering Information
MBF110 Part Number Description:
MB
F110
PFW
ST
G
PRODUCT LEVEL
ES = Engineering Sample
G = Production
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POWER SPECIFICATION
LP = Low Power (Failed pixels < 10)
ST = Standard Power (11 < Failed Pixel < 300)
PACKAGE TYPE
PFW1 = SOP (VSPA) – 80 pin
PFW = TSOP (LQFP) – 80 pin
PRODUCT TYPE
F = Fingerprint Sensor
FUJITSU SEMICONDUCTOR ID
MB = Micro Block
DK = Development Kit
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FUJITSU MICROELECTRONICS, INC.
Corporate Headquarters
3545 North First Street, San Jose, California 95134-1804
Tel: (800) 866-8608 Fax: (408) 922-9179
E-mail: [email protected] Web Site: http://www.fmi.fujitsu.com
©2001 Veridicom, Inc. All rights reserved.
All company and product names are trademarks or registered
trademarks of their respective owners.
Printed in U.S.A.
BMS-DS-20878-08/2001