PHILIPS BDX37 Npn switching transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D100
BDX35; BDX36; BDX37
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Apr 16
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
FEATURES
PINNING
• High current (max. 5 A)
PIN
• Low voltage (max. 75 V).
DESCRIPTION
1
emitter
2
collector, connected to the metal part of
the mounting surface
3
base
APPLICATIONS
• High-current switching in power applications.
DESCRIPTION
handbook, halfpage
NPN switching transistor in a TO-126; SOT32 plastic
package.
2
3
1
1
Fig.1
2
Top view
3
MAM254
Simplified outline (TO-126; SOT32)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
TYP.
MAX.
UNIT
open emitter
−
−
100
V
−
−
120
V
BDX35; BDX36
−
−
60
V
BDX37
−
−
75
V
BDX35
BDX36; BDX37
VCEO
MIN.
collector-emitter voltage
open base
IC
collector current (DC)
−
−
5
A
Ptot
total power dissipation
Tmb ≤ 75 °C
−
−
15
W
hFE
DC current gain
IC = 0.5 A; VCE = 10 V
45
−
450
fT
transition frequency
IC = 0.5 A; VCE = 5 V; f = 100 MHz
−
100
−
MHz
toff
turn-off time
ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A
−
350
500
ns
1997 Apr 16
2
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
CONDITIONS
collector-base voltage
MIN.
MAX.
UNIT
open emitter
BDX35
−
100
V
BDX36; BDX37
−
120
V
BDX35; BDX36
−
60
V
BDX37
−
75
V
−
5
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
−
5
A
ICM
peak collector current
−
10
A
IBM
peak base current
−
2
A
Ptot
total power dissipation
Tmb ≤ 75 °C
−
15
W
Tamb ≤ 25 °C
−
1.25
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient
in free air
Rth j-mb
thermal resistance from junction to mounting base
VALUE
UNIT
100
K/W
5
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
MIN.
TYP.
MAX. UNIT
IE = 0; VCB = 80 V
−
−
100
nA
IE = 0; VCB = 80 V; Tj = 100 °C
−
−
10
µA
IE = 0; VCB = 100 V
−
−
100
nA
IE = 0; VCB = 100 V; Tj = 100 °C
−
−
10
µA
−
−
100
nA
BDX35; BDX36
45
130
450
BDX37
45
80
450
−
−
900
mV
collector cut-off current
BDX35
ICBO
CONDITIONS
collector cut-off current
BDX36; BDX37
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
hFE
DC current gain
IC = 0.5 A; VCE = 10 V; see Fig.2
VCEsat
collector-emitter saturation voltage IC = 5 A; IB = 0.5 A
VCEsat
collector-emitter saturation voltage
1997 Apr 16
BDX35; BDX37
IC = 7 A; IB = 0.7 A
−
−
1.2
V
BDX36
IC = 10 A; IB = 1 A
−
−
2
V
3
Philips Semiconductors
Product specification
NPN switching transistors
SYMBOL
BDX35; BDX36; BDX37
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
IC = 5 A; IB = 0.5 A
−
−
1.7
V
BDX35; BDX37
IC = 7 A; IB = 0.7 A
−
−
2
V
BDX36
IC = 10 A; IB = 1 A
−
−
2.5
V
VBEsat
base-emitter saturation voltage
VBEsat
base-emitter saturation voltage
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
40
60
pF
fT
transition frequency
IC = 0.5 A; VCE = 5 V; f = 100 MHz
−
100
−
MHz
ICon = 1 A; IBon = 0.1 A; IBoff = −0.1 A
−
60
100
ns
ICon = 2 A; IBon = 0.2 A; IBoff = −0.2 A
−
−
80
ns
ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A
−
180
300
ns
ICon = 1 A; IBon = 0.1 A; IBoff = −0.1 A
−
600
800
ns
ICon = 2 A; IBon = 0.2 A; IBoff = −0.2 A
−
450
700
ns
ICon = 5 A; IBon = 0.5 A; IBoff = −0.5 A
−
350
500
ns
Switching times (between 10% and 90% levels)
turn-on time
ton
turn-off time
toff
MGD840
80
handbook, full pagewidth
hFE
60
40
20
0
10−1
1
102
10
VCE = 1 V.
Fig.2 DC current gain; typical values.
1997 Apr 16
4
103
IC (mA)
104
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; mountable to heatsink, 1 mounting hole; 3 leads SOT32
E
A
P1
P
D
L1
L
1
2
3
e1
c
w M
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
L
L1(1)
max
Q
P
P1
w
mm
2.7
2.3
0.88
0.65
0.60
0.45
11.1
10.5
7.8
7.2
4.58
2.29
16.5
15.3
2.54
1.5
0.9
3.2
3.0
3.9
3.6
0.254
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
OUTLINE
VERSION
SOT32
1997 Apr 16
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-03-04
TO-126
5
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Apr 16
6
Philips Semiconductors
Product specification
NPN switching transistors
BDX35; BDX36; BDX37
NOTES
1997 Apr 16
7
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© Philips Electronics N.V. 1997
SCA54
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Date of release: 1997 Apr 16
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