ISC BU406F Isc silicon npn power transistor Datasheet

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
BU406F/407F
DESCRIPTION
·High Voltage
·Fast Switching Speed: toff= 0.75μs (Max)
·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators and motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
PARAMETER
Collector-Emitter Voltage
VBE=0
VALUE
BU406F
400
BU407F
330
BU406F
200
BU407F
150
UNIT
V
Collector-Emitter Voltage
V
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
4
A
IBM
Base Current-Peak
6
A
PC
Collector Power Dissipation
@ TC=25℃
18
W
TJ
Junction Temperature
150
℃
-65~150
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
7
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
55
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistors
BU406F/407F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
PARAMETER
Collector-Emitter
Sustaining Voltage
CONDITIONS
BU406F
MIN
TYP.
MAX
UNIT
200
IC= 200mA ; IB= 0; L= 25mH
V
150
BU407F
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
1.2
V
Collector Cutoff Current
VCE= VCESmax; VBE= 0
0.05
1
mA
BU406F
VCE= 250V; VBE= 0
VCE= 350V; VBE= 0;TJ=150℃
0.1
1
BU407F
VCE= 200V; VBE= 0
VCE= 200V; VBE= 0;TJ=150℃
0.1
1
ICES
ICES
IEBO
Collector Cutoff Current
B
B
Emitter Cutoff Current
VEB= 5V; IC= 0
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
toff
Turn-Off Time
IC= 5A; IB1= -IB2= 0.5A
isc Website:www.iscsemi.cn
2
mA
1
4
mA
MHz
0.75
μs
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