MOTOROLA BC368 Amplifier transistor Datasheet

 Order this document
by BC368/D
SEMICONDUCTOR TECHNICAL DATA
COLLECTOR
2
COLLECTOR
2
3
BASE
3
BASE
NPN
PNP
1
EMITTER
1
EMITTER
Voltage and current are negative
for PNP transistors
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
20
Vdc
Collector – Emitter Voltage
VCES
25
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
1.0
Adc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watt
mW/°C
TJ, Tstg
– 55 to +150
°C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
Operating and Storage Junction
Temperature Range
1
2
3
CASE 29–04, STYLE 14
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Collector – Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
V(BR)CEO
20
—
—
Vdc
Collector – Base Breakdown Voltage
(IC = 100 µA, IE = 0 )
V(BR)CBO
25
—
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 100 µA, IC = 0)
V(BR)EBO
5.0
—
—
Vdc
Collector Cutoff Current
(VCB = 25 V, IE = 0)
(VCB = 25 V, IE = 0, TJ = 150°C)
ICBO
—
—
—
—
10
1.0
µAdc
mAdc
Emitter Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
—
—
10
µAdc
50
85
60
—
—
—
—
375
—
Characteristic
OFF CHARACTERISTICS
ON CHARACTERISTICS
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
(VCE = 1.0 V, IC = 0.5 A)
(VCE = 1.0 V, IC = 1.0 A)
Bandwidth Product (IC = 10 mA, VCE = 5.0 V, f = 20 MHz)
hFE
—
fT
65
—
—
MHz
Collector–Emitter Saturation Voltage (IC = 1.0 A, IB = 100 mA)
VCE(sat)
—
—
0.5
V
Base–Emitter On Voltage (IC = 1.0 A, VCE = 1.0 V)
VBE(on)
—
—
1.0
V
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1996
1
1.0
VCE , COLLECTOR VOLTAGE (VOLTS)
hFE, CURRENT GAIN
200
100
70
50
VCE = 1.0 V
TJ = 25°C
20
10
20
200
50
100
IC, COLLECTOR CURRENT (mA)
500
1000
TJ = 25°C
0.8
0.6
50 mA
1000 mA
0.2
20
50 100
–0.8
θ VB , TEMPERATURE COEFFICIENT (mV/ °C)
TJ = 25°C
VBE(sat) @ IC/IB = 10
0.8
V, VOLTAGE (VOLTS)
250 mA
Figure 2. Collector Saturation Region
1.0
VBE(on) @ VCE = 1.0 V
0.6
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1.0 2.0
5.0 10 20
50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
–1.2
–1.6
–2.0
θVB for VBE
–2.4
–2.8
1.0 2.0
5.0 10 20
50 100 200 500 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficient
Figure 3. “On” Voltages
300
160
TJ = 25°C
200
C, CAPACITANCE (pF)
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
500 mA
IC = 10 mA
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10
IB, BASE CURRENT (mA)
Figure 1. DC Current Gain
2
100 mA
0.4
100
70
VCE = 10 V
TJ = 25°C
f = 20 MHz
50
30
10
20
50
120
80
Cibo
40
Cobo
100
200
500
1000
0
Cobo
Cibo
5.0
1.0
10
2.0
15
3.0
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Current–Gain — Bandwidth Product
Figure 6. Capacitance
20
4.0
25
5.0
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
3
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4
◊
Motorola Small–Signal Transistors, FETs and Diodes Device
Data
BC368/D
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