IXYS IXFM40N30 Hiperfet power mosfet Datasheet

HiPerFETTM
Power MOSFETs
VDSS
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFM 35 N30
IXFH 40 N30
IXFM 40 N30
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
300
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MW
300
V
VGS
Continuous
±20
V
VGSM
Transient
±30
V
ID25
TC = 25°C
35N30
40N30
35
40
A
A
IDM
TC = 25°C, pulse width limited by TJM
35N30
40N30
140
160
A
A
IAR
TC = 25°C
35N30
40N30
35
40
A
A
30
mJ
5
V/ns
TC = 25°C
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
TJ £ 150°C, RG = 2 W
PD
TC = 25°C
300
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
1.13/10 Nm/lb.in.
Weight
Symbol
TO-204 = 18 g, TO-247 = 6 g
Test Conditions
VDSS
VGS = 0 V, ID = 250 mA
VGS(th)
VDS = VGS, ID = 4 mA
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = 0.8 • VDSS
VGS = 0 V
RDS(on)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
300
2
V
4
V
±100
nA
TJ = 25°C
TJ = 125°C
200
1
mA
mA
35N30
FH40N30
FM40N30
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.100
0.085
0.088
VGS = 10 V, ID = 0.5 ID25
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
RDS(on)
35 A 100 mW
40 A 85 mW
40 A 88 mW
trr £ 200 ns
Symbol
EAR
300 V
300 V
300 V
ID25
W
W
W
TO-247 AD (IXFH)
(TAB)
TO-204 AE (IXFM)
G
D
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
•
•
•
•
International standard packages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic Rectifier
Applications
•
•
•
•
•
•
•
•
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
• Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
• Space savings
• High power density
91523F (07/00)
1-4
IXFH 35N30
IXFM 35N30
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
C iss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
C rss
td(on)
22
25
S
4800
pF
745
pF
280
pF
20
30
ns
tr
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
60
90
ns
td(off)
RG = 2 W (External)
75
100
ns
45
90
ns
177
200
nC
28
50
78
tf
Qg(on)
Qgs
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
Dim. Millimeter
Min. Max.
0.780 0.800
0.819 0.845
nC
C
D
15.75 16.26
3.55 3.65
0.610 0.640
0.140 0.144
105
nC
E
F
4.32 5.49
5.4
6.2
0.170 0.216
0.212 0.244
0.42
K/W
G
H
1.65 2.13
4.5
0.065 0.084
0.177
K/W
J
K
1.0
1.4
10.8 11.0
0.040 0.055
0.426 0.433
Symbol
Test Conditions
IS
VGS = 0 V
35N30
40N30
35
40
A
A
ISM
Repetitive;
pulse width limited by TJM
35N30
40N30
140
160
A
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
1.5
V
t rr
IF = IS, -di/dt = 100 A/ms,
VR = 100 V
200
350
ns
ns
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5 2.49
0.087 0.102
TO-204 AE (IXFM) Outline
Dim.
A
B
C
D
E
F
G
H
J
K
Q
R
© 2000 IXYS All rights reserved
Inches
Min. Max.
19.81 20.32
20.80 21.46
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
TO-247 AD (IXFH) Outline
A
B
0.25
Source-Drain Diode
IXFH 40N30
IXFM 40N30
Millimeter
Min. Max.
38.61 39.12
- 22.22
6.40 11.40
1.45 1.60
1.52 3.43
30.15 BSC
10.67 11.17
5.21 5.71
16.64 17.14
11.18 12.19
3.84 4.19
25.16 26.66
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
Inches
Min. Max.
1.520 1.540
- 0.875
0.252 0.449
0.057 0.063
0.060 0.135
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.050
2-4
IXFH 35N30
IXFM 35N30
© 2000 IXYS All rights reserved
IXFH 40N30
IXFM 40N30
3-4
IXFH 35N30
IXFM 35N30
Fig.7 Gate Charge Characteristic Curve
IXFH 40N30
IXFM 40N30
Fig.8 Forward Bias Safe Operating Area
10
VDS = 150V
10µs
100 Limited by RDS(on)
ID = 21A
8
ID - Amperes
VGE - Volts
IG = 10mA
6
4
100µs
1ms
10
10ms
2
100ms
0
1
0
25
50
75
100 125 150 175 200
1
10
Gate Charge - nCoulombs
VDS - Volts
Fig.9 Capacitance Curves
4500
Fig.10 Source Current vs. Source
80
Ciss
70
4000
60
3500
ID - Amperes
Capacitance - pF
300
100
f = 1 MHz
VDS = 25V
3000
2500
2000
1500
1000
500
5
40
TJ = 25°C
20
Crss
10
10
15
20
0
0.0
25
TJ = 125°C
30
Coss
0
0
50
0.2
Vds - Volts
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD - Volts
Fig.11 Transient Thermal Impedance
Thermal Response - K/W
1
D=0.5
0.1
D=0.2
D=0.1
D=0.05
0.01 D=0.02
D=0.01
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Time - Seconds
© 2000 IXYS All rights reserved
4-4
Similar pages