MCC BZX84C11 Silicon 410 mwatt zener diode Datasheet

MCC
BZX84C2V4
THRU
BZX84C39
omponents
21201 Itasca Street Chatsworth
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$ % !"#
Features
Silicon
l
Planar Die construction
l
410mW Power Dissipation
l
Zener Voltages from 2.4V - 39V
l
Ideally Suited for Automated Assembly Processes
410 mWatt
Zener Diodes
.
Mechanical Data
SOT-23
l
Case: SOT-23, Plastic
l
Terminals: solderable per MIL-STD-202, Methode 208
l
Weight: 0.008 grams (approx.)
A
D
C
Maximum Ratings @ 25oC Unless Otherwise Specified
Zener Current
IF
100
mA
Maximum Forward
VF
1.2
V
Voltage
Power Dissipation
P(AV)
410
mWatt
(Note 1)
Operation And
TJ , TSTG -55o C to
Storage
+150o C
Temperature
Peak Foreard Surge
IFSM
2.0
A
Current 8.3mS half
NOTES:
A. Mounted on 5.0mm2(.013mm thick) land areas.
B. Measured on 8.3ms, single half sine-wave or
equivalent square wave, duty cycle = 4 pulses per
minute maximum.
F
B
E
H
G
J
DIMENSIONS
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
*Pin Configuration - Top View
.037
.950
.037
.950
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inches
mm
MCC
BZX84C2V4 thru BZX84C39
ELECTRICAL CHARACTERISTICS (TA=25 degree C unless otherwise noted) VF=1.2V max, IF=100mA for all types.
Type
Nimber
BZX84C2V4
BZX84C2V7
BZX84C3
BZX84C3V3
BZX84C3V6
BZX84C3V9
BZX84C4V3
BZX84C4V7
BZX84C5V1
BZX84C5V6
BZX84C6V2
BZX84C6V8
BZX84C7V5
BZX84C8V2
BZX84C9V1
BZX84C10
BZX84C11
BZX84C12
BZX84C13
BZX84C15
BZX84C16
BZX84C18
BZX84C20
BZX84C22
BZX84C24
BZX84C27
BZX84C30
BZX84C33
BZX84C36
BZX84C39
Marking
Code
W1
W2
W3
W4
W5
W6
W7
W8
W9
WA
WB
WC
WD
WE
WF
WG
WH
WI
WK
WL
WM
WN
WO
WP
WR
WS
WT
WU
WW
WX
Nominal Zener Voltage
Vz @ IzT
Nom. V Min. V Max. V
2.4
2.28
2.52
2.7
2.5
2.9
3
2.8
3.2
3.3
3.1
3.5
3.6
3.4
3.8
3.9
3.7
4.1
4.3
4
4.6
4.7
4.4
5
5.1
4.8
5.4
5.6
5.2
6
6.2
5.8
6.6
6.8
6.4
7.2
7.5
7
7.9
8.2
7.7
8.7
9.1
8.5
9.6
10
9.4
10.6
11
10.4
11.6
12
11.4
12.7
13
12.4
14.1
15
13.8
15.6
16
15.3
17.1
18
16.8
19.1
20
18.8
21.2
22
20.8
23.3
24
22.8
25.6
27
25.1
28.9
30
28
32
33
31
35
36
34
38
39
37
41
Max. Zener Impedance
ZzT @ IzT
Ohm
mA
100
5
100
5
95
5
95
5
90
5
90
5
90
5
80
5
60
5
40
5
10
5
15
5
15
5
15
5
15
5
20
5
20
5
25
5
30
5
30
5
40
5
45
5
55
5
55
5
70
5
80
5
80
5
80
5
90
5
130
5
ZzK @ IzK
Ohm
mA
600
1
600
1
600
1
600
1
600
1
600
1
600
1
500
1
480
1
400
1
150
1
80
1
80
1
80
1
100
1
150
1
150
1
150
1
170
1
200
1
200
1
225
1
225
1
250
1
250
1
300
1
300
1
325
1
350
1
350
1
Max.Reverse
Leakage Current
I R @ VR
uA
V
50
1
20
1
10
1
5.0
1
5.0
1
3.0
1
3.0
1
3.0
2
2.0
2.0
1.0
2.0
3.0
4.0
2.0
4.0
1.0
5
0.7
5
0.5
6
0.2
7.0
0.1
8.0
0.1
8.0
0.1
8.0
0.1
10.5
0.1
11.2
0.1
12.6
0.1
14.0
0.1
15.4
0.1
16.8
0.1
18.9
0.1
21.0
0.1
23.1
0.1
25.2
0.1
27.3
NOTE:
1.Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal zener voltage of ±5%.
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
3.Zener Voltage (VZ) Measurement. Guarantees the zener voltage when measured at 90 seconds while maintaining the lead temperature (TL) at 30OC, from the diode body.
4.Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 60 cycle ac voltage, which results when an AC current having an rms value equal to 10% of the dc zener
current (IZT or IZK) is superimposed on IZT or IZK.
5.Surge Current (IR) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive, reverse surge current of 1/2 square wave or equivalent sine
wave pulse of 1/120 second duration superimposed on the test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 5.
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MCC
BZX84C2V4 thru BZX84C39
8
100
TEMPERATURE COEFFICIENT,mV / oC)
TEMPERATURE COEFFICIENT,mV / oC)
7
6
5
4
3
10
2
1
0
-1
-2
-3
2
3
4
5
6
7
8
9
10
11
1
10
12
100
NOMINAL ZENER VOLTAGE, Volts
NOMINAL ZENER VOLTAGE, Volts
TYPICAL REVERSE CURRENT
1000
TJ=25 C
IZ(AC)=0.1IZ(DC)
F=1 kHZ
O
IZ = 1 mA
FORWARD CURRENT, mA
DYNAMIC IMPEDANCE, W
1000
STEADY STATE POWER DERATING
100
5 mA
20 mA
10
100
150OC
10
O
75 C
25OC
1
1
10
1
0.4
100
0.5
0.6
0.7
5OC
0.8
0.9
1.0
1.1
1.2
FORWARD VOLTAGE, Volts
NORMAL ZENER VOLTAGE, Volts
TYPICAL FORWARD VOLTAGE
EFFECT OF ZENER VOLTAGE ON ZENER IMPEDANCE
1000
o
CAPACITANCE, pF
POWER DISSIPATION, Watts
1.0
0.8
0.6
PD V.S. TA
TA=25 C
0 V BIAS
1 V BIAS
1.2
100
BIAS AT
50% OF VZ NOM
10
0.4
0.2
0
1
25
50
75
100
125
150
TEMPERATURE (oC)
STEADY STATE POWER DERATING
1
10
155
NOMINAL ZENER VOLTAGE, Volts
TYPICAL CAPACITANCE
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100
MCC
BZX84C2V4 thru BZX84C39
100
100
o
o
TA=25 C
10
ZENER CURRENT, mA
ZENER CURRENT, mA
TA=25 C
1
0.1
0.01
0
2
4
6
8
10
12
ZENER VOLTAGE, Volts
10
1
0.1
0.01
10
30
50
ZENER VOLTAGE V.S. ZENER CURRENT
LEAKAGE CURRENT (mA)
1000
100
10
1
+150OC
0.1
0.01
0.001
+25OC
0.0001
-55OC
0
10
20
30
40
50
60
90
ZENER VOLTAGE, Volts
ZENER VOLTAGE V.S. ZENER CURRENT
0.00001
70
70
80
90
NOMINAL ZENER VOLTAGE, Vlots
TYPICAL LEAKGE CURRENT
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