FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W (Typ.) Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the size and complexity of highly linear, high power base station transmitting amplifiers. This new product is well suited for use in W-CDMA and IMT 2000 base station amplifiers as it offers high gain, long term reliability and ease of use. APPLICATIONS • Solid State Base-Station Power Amplifier. • W-CDMA and IMT 2000 Communication Systems. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C) Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 230 W Tc = 25°C Total Power Dissipation PT Storage Temperature Tstg -65 to +175 °C Channel Temperature Tch +175 °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 367 and -161 mA respectively with gate resistance of 1.5Ω. 3. The operating channel temperature (Tch) and case temperature (Tc) should not exceed 145°C and 80°C respectively. ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C) Item Drain Current Pinch-Off Voltage Symbol IDSS Vp Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS = 680mA VGSO IGS = -6.8mA Output Power Pout Linear Gain GL VDS = 12V f = 2.17 GHz IDS = 6.0A Pin = 45.0dBm Note 1 Thermal Resistance Rth Gate-Source Breakdown Voltage Channel to Case CASE STYLE: IU Note 1: The RF test are performed using a P.W. = 1msec., Duty Cycle = 20% Edition 1.0 Preliminary November 2000 1 Min. Limits Typ. Max. Unit - 32 - A -0.1 -0.3 -0.5 V -5 - - V 52.8 53.8 - dBm 10.5 11.5 - dB - 0.45 0.65 °C/W FLL2400IU-2C L-Band High Power GaAs FET OUTPUT POWER vs. ACPR ACPR & IMD (dBc) -28 VDS = 12V IDS = 6.0A f0 = 2.14GHz f1 = 2.15GHz W-CDMA, 2-Tone Signal Chip Rate: 3.84Mcps 36 32 28 -32 IMD -36 24 ACPR@5MHz -40 20 -44 16 ηadd -48 12 IDS(RF) -52 8 -56 4 -56 ηadd (%) & IDS(RF) (A) -24 0 30 32 34 36 38 40 42 44 46 48 Output Power (dBm) POWER GAIN vs. FREQUENCY OUTPUT POWER vs. INPUT POWER 56 VDS = 12V IDS = 6.0A Po = 47dBm 54 Output Power (dBm) Power Gain (dB) 13 12 11 VDS =12V IDS = 6.0A f = 2.14GHz 52 Pout 50 48 46 44 42 10 28 30 32 34 36 38 40 42 Input Power (dBm) 9 2.0 2.1 2.2 2.3 Frequency (GHz) 2 44 46 48 FLL2400IU-2C L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 3000mA FREQUENCY (MHZ) 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 S11 S21 MAG ANG .96 .95 .94 .92 .89 .83 .75 .59 .29 .33 .65 .74 .73 .66 .51 .26 .25 .56 .74 .83 .87 163.50 160.98 157.92 154.29 149.86 144.48 137.49 128.15 123.34 -154.32 -168.04 176.86 165.20 154.02 142.48 141.92 -137.12 -139.05 -152.03 -162.29 -170.06 MAG .38 .44 .54 .69 .91 1.23 1.73 2.49 3.58 4.07 3.38 2.71 2.39 2.34 2.47 2.61 2.53 2.09 1.62 1.23 .91 S12 S22 ANG MAG ANG 27.91 17.85 6.09 -7.95 -24.30 -44.26 -68.31 -98.08 -138.58 169.42 124.54 93.33 68.23 44.10 17.00 -13.63 -53.34 -92.50 -126.64 -157.48 174.26 .01 .01 .01 .01 .01 .01 .02 .02 .03 .04 .04 .03 .03 .03 .04 .04 .04 .04 .03 .02 .02 15.94 10.08 2.90 -8.76 -26.71 -48.79 -78.69 -115.43 -166.25 135.08 83.42 47.28 19.42 -7.18 -36.14 -66.67 -106.75 -145.50 -178.55 153.66 125.90 MAG .93 .92 .90 .87 .83 .79 .76 .73 .59 .26 .29 .45 .53 .57 .60 .62 .66 .63 .55 .49 .55 ANG 162.90 160.44 157.61 154.92 152.29 149.47 145.40 137.71 122.69 120.03 -178.92 -177.80 176.00 170.13 165.05 157.84 143.72 120.08 86.52 39.21 -12.13 Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier designs. Download S-Parameters, click here 3 FLL2400IU-2C L-Band High Power GaAs FET Case Style "IU" 23.9±0.25 (0.941) 3 0.1 (0.004) 17.4±0.15 (0.685) 6 15.5±0.15 (0.610) 2 8.0±0.15 (0.315) 1 2.0 MIN. 12-R0.5 2.0 (0.078) 5 1.9±0.15 (0.075) 2.0 MIN. 4-R1.3 4 10.0±0.2 (0.393) 30.4±0.25 (1.181) 2.4±0.15 (0.094) 4.5 Max. (0.177) 34.0±0.25 (1.339) 0.7±0.2 1, 2: 3: 4, 5: 6: Gate Source Drain Source Unit: mm (inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS EUROPE, GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI1100M200 4