FLL410IK-4C L-Band High Power GaAs FET FEATURES ・High Output Power: Pout=46.0dBm(Typ.) ・High Gain: GL=11.5dB(Typ.) ・High PAE: ηadd=44%(Typ.) ・Broad Band: 3.4~3.7GHz ・Hermetically Sealed Package DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4 – 3.7 GHz band amplifiers. This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25oC) Symbol Rating Unit Drain-Source Voltage Item VDS 15 V Gate-Source Voltage VGS -5 V Total Power Dissipation PT Storage Temperature Channel Temperature W 107.0 Tstg -65 to +175 o Tch 175 o C C RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25oC) Item Symbol Condition Limit Unit DC Input Voltage VDS ≤12 V Gate Current IGF RG=5Ω ≤117 mA Gate Current IGR RG=5Ω ≥-23 mA ≤145 o Operating Channel Temperature Tch C ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol VDS=5V , VGS=0V Min. - Limit Typ. 4.0 Max. - Test Conditions Unit A Pinch-off Voltage IDSS Vp VDS=5V , IDS=100mA -0.1 -0.3 -0.5 V Gate-Source Breakdown Voltage VGSO IGS=-1.0mA -5.0 - - V Output Power POUT 45.0 46.0 - dBm 10.5 11.5 - dB - 6.7 8.7 A % Drain Current GL Linear Gain * 1 Idsr Drain Current ηadd Power-added Efficiency Thermal Resistance Rth VDS=12V f=3.6 GHz IDS=3A Pin=36.0dBm Channel to Case *１：GL is measured at Pin=22.0dBm ESD Class Ⅲ 44 - - 1.0 1.4 o C/W CASE STYLE: IK 2000V ~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5kΩ) Edition 1.1 Oct 2003 - 1 FLL410IK-4C L-Band High Power GaAs FET OUTPUT POWER , POWER ADDED EFFICIENCY vs. TOTAL INPUT POWER OUTPUT POWER vs. INPUT POWER VDS=12V, IDS(DC)=3A VDS=12V, IDS(DC)=3A, f=3.6GHz Pin=38dBm 46 80 42 Pin=30dBm 40 38 Pin=26dBm 36 34 Output Power [dBm] 46 Pin=34dBm 44 Pin=22dBm 32 70 Pout 44 60 42 50 40 40 38 P.A.E 3.4 3.5 3.6 3.7 3.8 20 34 10 0 21 23 25 27 29 31 33 35 37 39 Frequency [GHz] Input Power [dBm] IMD vs. TOTAL OUTPUT POWER -20 -24 -28 -32 -36 -40 -44 -48 -52 -56 -60 VDS=12V, f=3.6GHz, ∆ f=5MHz IM3 IM5 2A 3A 2A 5A 3A 5A 24 26 28 30 32 34 36 38 40 42 44 Total Output Power [dBm] 2 30 36 32 3.3 IMD [dBc] Output Power [dBm] 48 Power Added Efficiency [%] 48 FLL410IK-4C L-Band High Power GaAs FET ■ S-PARAMETER +90° +50j +100j +25j +250j +10j 3.6GHz 3.6G H z ∞ 3.6G H z ±180° 6 2 Scale for |S21| 3.6GHz -250j -10j 25 -25j 10Ω -100j -50j 0.3 -90° S 11 S 22 VDS=12V, IDS=3.0A Freq [GHz] 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 4.10 4.20 4.30 4.40 4.50 S11 MAG ANG 0.58 35.68 0.42 13.30 0.25 -20.74 0.14 -94.08 0.23 -164.13 0.36 163.77 0.45 142.74 0.50 124.23 0.50 108.29 0.47 93.47 0.39 78.62 0.25 65.52 0.07 82.54 0.20 179.28 0.42 166.40 0.60 150.07 0.71 136.32 0.78 124.93 0.81 115.73 0.84 107.96 0.85 101.79 S21 MAG 2.79 3.06 3.39 3.74 3.98 4.33 4.40 4.11 3.94 4.12 4.35 4.47 4.54 4.40 3.75 3.02 2.49 2.10 1.73 1.47 1.34 0° Scale for |S 12| 0 ANG -88.92 -111.83 -135.39 -152.40 -172.83 160.16 136.09 116.10 97.42 79.27 59.40 36.18 10.84 -17.44 -46.02 -67.67 -86.14 -103.97 -120.83 -133.98 -145.90 3 S12 MAG 0.02 0.02 0.02 0.03 0.03 0.03 0.04 0.04 0.04 0.05 0.05 0.06 0.06 0.06 0.05 0.05 0.04 0.03 0.03 0.02 0.02 ANG -106.81 -133.45 -165.02 167.96 138.89 113.65 88.25 67.09 45.57 26.25 5.29 -15.70 -37.11 -63.99 -90.06 -113.42 -130.59 -143.89 -155.27 -165.37 -172.96 S22 MAG ANG 0.79 62.67 0.78 52.26 0.74 39.91 0.68 26.00 0.60 11.96 0.52 -2.49 0.45 -17.92 0.39 -35.62 0.34 -56.13 0.33 -79.22 0.32 -105.46 0.32 -133.85 0.29 -165.63 0.25 156.61 0.21 109.33 0.21 58.18 0.25 18.29 0.30 -8.49 0.36 -27.76 0.40 -43.35 0.42 -58.31 S 12 S 21 FLL410IK-4C L-Band High Power GaAs FET ■ BOARD LAYOUT(Reference) <INPUT SIDE> εr=3.5 <OUTPUT SIDE> εr=3.5 εr=3.5 , t=0.6mm Unit : mm 4 FLL410IK-4C L-Band High Power GaAs FET ■ Package Out Line PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 5 FLL410IK-4C L-Band High Power GaAs FET For further information please contact : CAUTION FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU QUANTUM DEVICES EUROPE LTD. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: ・Do not put these products into the mouth. ・Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. ・Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. HONG KONG BRANCH Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 FUJITSU QUANTUM DEVICES LTD. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL: +81-55-275-4411 FAX: +81-55-275-9461 FUJITSU QUANTUM DEVICES LIMITED Business Development Division Hachioji Daiichi-Seimei Bldg., 11th Floor 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2004 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. 6