FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB (Typ.)@8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium power applications up to the 12GHz. These devices have a wide dynamic range and are suitable for use in medium power, wide band, linear drive amplifiers or oscillators. Fujitsu’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS Ptot Tstg Tch Condition Rating Unit Tc = 25°C 12 -5 1.0 -65 to +175 175 V V W °C °C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain - source operating voltage (VDS) should not exceed 8 volts. 2. The forward and reverse gate currents should not exceed 0.7 and -0.1 mA respectively with gate resistance of 2000Ω. 3. The operating channel temperature (Tch) should not exceed 145°C. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Symbol IDSS Test Conditions VDS = 3V, VGS = 0V Min. Limit Typ. Max. Unit 35 55 75 mA Transconductance gm VDS = 3V, IDS = 27mA - 50 - mS Pinch-off Voltage Vp VDS = 3V, IDS = 2.7mA -0.7 -1.2 -1.7 V IGS = -2.7µA -5.0 - - V - 2.5 - dB - 10.5 - dB f = 4GHz VDS = 8V, f = 8GHz 20.5 IDS = 0.7IDSS f = 12GHz f = 4GHz VDS = 8V, f = 8GHz 10.0 IDS = 0.7IDSS f = 12GHz 21.5 21.5 20.5 15.0 11.0 7.5 - dBm dBm dBm dB dB dB Channel to Case 120 150 °C/W Gate Source Breakdown Voltage Noise Figure Associated Gain VGSO NF Gas Output Power at 1 dB G.C.P. P1dB Power Gain at 1 dB G.C.P. G1dB Thermal Resistance Rth VDS = 3V, IDS = 10mA f = 8GHz CASE STYLE: WF Edition 1.2 July 1999 - G.C.P.: Gain Compression Point 1 FSX017WF General Purpose GaAs FET DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 70 1.0 Drain Current (mA) Total Power Dissipation (W) POWER DERATING CURVE 0.8 0.6 0.4 0.2 60 VGS = 0V 50 -0.2V -0.4V 40 30 -0.6V -0.8V 20 -1.0V 10 0 50 100 150 Case Temperature (°C) -1.2V 2 200 22 Pout P1dB (dBm) 18 16 14 60 f=4GHz 8GHz 12GHz 12 8 10 8GHz 12GHz IDS = 0.5 IDSS ηadd 10 40 20 ηadd (%) Output Power (dBm) 20 f=4GHz 6 P1dB vs. VDS OUTPUT POWER vs. INPUT POWER 22 VDS = 8V 4 Drain-Source Voltage (V) f = 8GHz IDS = 0.7 IDSS 20 18 16 14 8 -4 -2 0 2 4 6 8 10 12 4 5 6 7 8 Drain-Source Voltage (V) Input Power (dBm) 2 FSX017WF General Purpose GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 20 2 18 4 12 14 0 16 20 8 14 25 10 -j10 50Ω 180° 250 0.5GHz 5 4 16 -j250 10 -j25 18 4 6 -j100 2 14 500 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 8 0° 10 12 0.1 0.2 -90° -j50 FREQUENCY (MHZ) 4 0.5GHz 8 12 2 8 2 20 18 SCALE FOR |S21| 0.5GHz 6 4 6 0.5GHz 18 12 20 +j250 SCALE FOR |S12| 10 16 +j10 S11 MAG ANG .994 .982 .936 .891 .855 .817 .778 .738 .705 .693 .679 .655 .631 .610 .573 .503 -17.5 -33.7 -66.2 -92.7 -112.9 -131.0 -150.4 -172.0 167.8 150.3 135.1 117.2 96.4 78.9 64.6 48.0 S-PARAMETERS VDS =8V, IDS = 35mA S21 S12 MAG ANG MAG ANG 4.666 4.499 4.066 3.486 3.001 2.706 2.555 2.407 2.206 2.020 1.894 1.842 1.750 1.595 1.422 1.298 165.0 151.2 124.2 101.1 82.3 66.1 49.2 30.3 12.0 -5.3 -20.9 -38.1 -57.3 -76.9 -94.9 -111.5 .007 .013 .022 .026 .027 .026 .026 .026 .022 .025 .028 .035 .042 .047 .050 .058 75.3 69.9 47.3 30.2 17.5 7.6 0.0 -12.8 -20.7 -24.2 -31.8 -43.3 -60.2 -79.6 -96.0 -113.5 S22 MAG ANG .826 .819 .808 .799 .796 .795 .791 .778 .774 .777 .780 .791 .798 .809 .830 .846 -8.4 -17.3 -33.3 -47.7 -59.2 -67.5 -76.3 -88.8 -102.1 -115.7 -127.6 -140.5 -155.2 -173.0 172.1 163.3 Download S-Parameters, click here 3 FSX017WF General Purpose GaAs FET 1.0 Min. (0.039) Case Style "WF" Metal-Ceramic Hermetic Package 0.1±0.05 (0.004) 2-ø1.6±0.01 (0.063) 4 1.0 Min. (0.039) 3 0.6 (0.024) 2 2.5 Max. (0.098) 2.5±0.15 (0.098) 1 2.5 (0.098) 1: Gate 0.8±0.1 (0.031) 2: Source (Flange) 6.1±0.1 (0.240) 8.5±0.2 (0.335) 3: Drain 4: Source (Flange) Unit: mm (Inches) For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FUJITSU MICROELECTRONICS, LTD. Compound Semiconductor Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone:+44 (0)1628 504800 FAX:+44 (0)1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put these products into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 1998 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0598M200 4