FGP5N60LS tm 600V, 5A Field Stop IGBT Features General Description • High Current Capability Using novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential. • Low Saturation Voltage: VCE(sat) =1.7V @ IC = 5A • High Input Impedance • RoHS Compliant Applications • HID ballast and Wall dimmer C G TO-220 G C E E Absolute Maximum Ratings Symbol Description VCES Collector to Emitter Voltage VGES Gate to Emitter Voltage IC ICM (1) PD Collector Current @ TC = 25oC Collector Current @ TC = 100oC Pulsed Collector Current o @ TC = 25 C o Maximum Power Dissipation @ TC = 25 C Maximum Power Dissipation o @ TC = 100 C Tstg Storage Temperature Range TL Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Units 600 V 20 V 10 A 5 A 36 A 83 W 33 Operating Junction Temperature TJ Ratings W -55 to +150 o C -55 to +150 o C 300 o C Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.2, VGE=13.5V Thermal Characteristics Symbol Parameter Typ. Max. Units RJC Thermal Resistance, Junction to Case - 1.5 o C/W RJA Thermal Resistance, Junction to Ambient - 62.5 o C/W ©2010 Fairchild Semiconductor Corporation FGP5N60LS Rev. A1 1 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT February 2010 Device Marking Device Package Packaging Type Qty per Tube Max Qty per Box FGP5N60LS FGP5N60LS TT220 Tube 50ea - Electrical Characteristics of the IGBT Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 - - V - 0.8 - V/oC Off Characteristics BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A BVCES TJ Temperature Coefficient of Breakdown Voltage ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A IGES G-E Leakage Current VGE = VGES, VCE = 0V - - ±400 nA IC = 250A, VCE = VGE VGE = 0V, IC = 250A On Characteristics VGE(th) G-E Threshold Voltage Collector to Emitter Saturation Voltage VCE(sat) Collector to Emitter Saturation Voltage 2.7 3.9 4.5 V IC = 5A, VGE = 15V - 1.7 2.1 V IC = 5A, VGE = 15V, TC = 125oC - 1.8 - V IC = 14A, VGE = 12V - 2.7 3.2 V IC = 14A, VGE = 12V, TC = 125oC - 3.1 - V - 278 - pF VCE = 30V, VGE = 0V, f = 1MHz - 28 - pF - 11 - pF - 4.3 - ns Dynamic Characteristics Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Rise Time - 1.6 - ns td(off) Turn-Off Delay Time - 36 - ns tf Fall Time - 118 - ns Eon Turn-On Switching Loss - 38 - J Eoff Turn-Off Switching Loss - 130 - J Ets Total Switching Loss - 168 - J td(on) Turn-On Delay Time - 4.1 - ns tr Rise Time - 1.8 - ns td(off) Turn-Off Delay Time - 37 - ns tf Fall Time - 150 - ns Eon Turn-On Switching Loss - 80 - J Eoff Turn-Off Switching Loss - 168 - J VCC = 400V, IC = 5A, RG = 10, VGE = 15V, Inductive Load, TC = 25oC VCC = 400V, IC = 5A, RG = 10, VGE = 15V, Inductive Load, TC = 125oC Ets Total Switching Loss - 248 - J Qg Total Gate Charge - 18.3 - nC Qge Gate to Emitter Charge - 1.6 - nC Qgc Gate to Collector Charge - 7.9 - nC FGP5N60LS Rev. A1 VCE = 400V, IC = 5A, VGE = 15V 2 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Package Marking and Ordering Information Figure 1. Typical Output Characteristics o Collector Current, IC [A] TC = 25 C 30 Figure 2. Typical Output Characteristics 40 20V 17V 15V 13.5V 10V 0 VGE = 8V 0 2 4 6 8 Collector-Emitter Voltage, VCE [V] 12V 30 20 10V 10 VGE = 8V 0 10 Figure 3. Typical Saturation Voltage Characteristics 0 Common Emitter VCE = 20V o o TC = 25 C 30 Collector Current, IC [A] Collector Current, IC [A] 10 30 Common Emitter VGE = 15V o TC = 125 C 20 10 TC = 25 C o TC = 125 C 20 10 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] 6 Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 2 4 6 8 10 Gate-Emitter Voltage,VGE [V] 12 Figure 6. Saturation Voltage vs. VGE 3.0 20 Common Emitter VGE = 15V Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 2 4 6 8 Collector-Emitter Voltage, VCE [V] Figure 4. Transfer Characteristics 40 0 13.5V 15V 20 10 20V 17V o TC = 125 C 12V Collector Current, IC [A] 40 2.5 10A 2.0 5A 1.5 IC = 2.5A Common Emitter o TC = -40 C 16 12 8 5A 10A 4 IC = 2.5A 1.0 25 FGP5N60LS Rev. A1 0 50 75 100 125 o Collector-EmitterCase Temperature, TC [ C] 3 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Typical Performance Characteristics Figure 7. Saturation Voltage vs. VGE 20 Common Emitter Common Emitter o o TC = 25 C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 20 Figure 8. Saturation Voltage vs. VGE 16 12 8 10A 4 5A IC = 2.5A 0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 125 C 16 12 8 10A 4 IC = 2.5A 0 20 Figure 9. Capacitance Characteristics 5A 0 15 Common Emitter Common Emitter VGE = 0V, f = 1MHz o Gate-Emitter Voltage, VGE [V] 500 Capacitance [pF] 20 Figure 10. Gate charge Characteristics 600 o TC = 25 C Cies 400 300 Coes 200 Cres 100 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] TC = 25 C 12 10 Collector-Emitter Voltage, VCE [V] 6 3 30 Figure 11. SOA Characteristics 300V 200V 0 1 VCC = 100V 9 0 5 10 15 Gate Charge, Qg [nC] 20 Figure 12. Turn-on Characteristics vs. Gate Resistance 100 10 100s Switching Time [ns] Collector Current, Ic [A] 10s 10 1ms 1 10ms DC Single Nonrepetitive 0.1 o Pulse T C = 25 C Curves must be derated linearly with increase in temperature 0.01 0.1 FGP5N60LS Rev. A1 1 10 100 Collector-Emitter Voltage, VCE [V] td(on) tr 1 Common Emitter VCC = 400V, VGE = 15V IC = 5A o TC = 25 C o TC = 125 C 0.5 1000 0 4 10 20 30 40 Gate Resistance, RG [ ] 50 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Typical Performance Characteristics Figure 13. Turn-off Characteristics vs. Gate Resistance Figure 14. Turn-on Characteristics vs. Collector Current 10 300 tf Switching Time [ns] Switching Time [ns] td(on) 100 td(off) Common Emitter VCC = 400V, VGE = 15V IC = 5A tr 1 Common Emitter VGE = 15V, RG = 10 o TC = 25 C o TC = 25 C o TC = 125 C o TC = 125 C 10 0.1 0 10 20 30 40 50 2 4 Gate Resistance, RG [] Figure 15. Turn-off Characteristics vs. Collector Current 10 1000 Common Emitter VGE = 15V, RG = 10 Common Emitter VCC = 400V, VGE = 15V o TC = 25 C IC = 5A o o TC = 125 C tf 100 td(off) 2 4 6 TC = 25 C Switching Loss [J] Switching Time [ns] 8 Figure 16. Switching Loss vs. Gate Resistance 800 20 6 Collector Current, IC [A] 8 o TC = 125 C Eoff 100 Eon 30 10 0 10 20 30 40 50 Gate Resistance, RG [] Collector Current, IC [A] Figure 17. Switching Loss vs. Collector Current Figure 18. Turn off Switching SOA Characteristics 50 1000 Common Emitter VGE = 15V, RG = 10 Switching Loss [J] Collector Current, IC [A] o TC = 25 C Eoff o TC = 125 C 100 Eon 10 1 Safe Operating Area o 10 2 4 6 8 10 1 Collector Current, IC [A] FGP5N60LS Rev. A1 VGE = 13.5V, TC = 125 C 0.1 10 100 1000 Collector-Emitter Voltage, VCE [V] 5 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Typical Performance Characteristics FGP5N60LS 600V, 5A Field Stop IGBT Typical Performance Characteristics Figure 19.Transient Thermal Impedance of IGBT Thermal Response [Zthjc] 2 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 single pulse 0.03 -5 10 t2 Duty Factor, D = t1/t2 Peak Tj = Pdm x Zthjc + TC -4 10 -3 -2 10 10 -1 10 0 10 Rectangular Pulse Duration [sec] FGP5N60LS Rev. A1 6 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT Mechanical Dimensions TO-220AB FGP5N60LS Rev. A1 7 www.fairchildsemi.com tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I47 FGP5N60LS Rev. A1 8 www.fairchildsemi.com FGP5N60LS 600V, 5A Field Stop IGBT TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. The Power Franchise® AccuPower™ FRFET® PowerTrench® ® Auto-SPM™ Global Power ResourceSM PowerXS™ Green FPS™ Build it Now™ Programmable Active Droop™ Green FPS™ e-Series™ CorePLUS™ QFET® TinyBoost™ QS™ Gmax™ CorePOWER™ TinyBuck™ Quiet Series™ GTO™ CROSSVOLT™ TinyCalc™ RapidConfigure™ IntelliMAX™ CTL™ TinyLogic® ISOPLANAR™ Current Transfer Logic™ ™ TINYOPTO™ ® MegaBuck™ DEUXPEED TinyPower™ Saving our world, 1mW/W/kW at a time™ Dual Cool™ MICROCOUPLER™ TinyPWM™ SignalWise™ EcoSPARK® MicroFET™ TinyWire™ SmartMax™ EfficentMax™ MicroPak™ TriFault Detect™ SMART START™ MicroPak2™ ® TRUECURRENT™* SPM® MillerDrive™ SerDes™ STEALTH™ MotionMax™ Fairchild® SuperFET™ Motion-SPM™ Fairchild Semiconductor® SuperSOT™-3 OptiHiT™ FACT Quiet Series™ UHC® SuperSOT™-6 OPTOLOGIC® FACT® ® Ultra FRFET™ ® SuperSOT™-8 OPTOPLANAR FAST ® UniFET™ SupreMOS™ FastvCore™ VCX™ SyncFET™ FETBench™ VisualMax™ Sync-Lock™ FlashWriter® * PDP SPM™ XS™ ®* FPS™ Power-SPM™ F-PFS™