Fairchild FJA4310OTU Npn epitaxial silicon transistor Datasheet

FJA4310
NPN Epitaxial Silicon Transistor
•
•
•
•
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Audio Power Amplifier
High Current Capability : IC=10A
High Power Dissipation
Wide S.O.A
Complement to FJA4210
TO-3P
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings*
T a = 25°C unless otherwise noted
Symbol
Parameter
Collector-Base Voltage
VCBO
Ratings
200
Units
V
140
V
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current (DC)
10
A
IB
Base Current (DC)
1.5
A
PC
Collector Dissipation (TC =25°C)
100
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC=5mA, IE=0
Min.
200
140
BVCEO
Collector-Emitter Breakdown Voltage
IC=50mA, RBE=¥
BVEBO
Emitter-Base Breakdown Voltage
IE=5mA, IC=0
ICBO
Collector Cut-off Current
VCB=200V, IE=0
Emitter Cut-off Current
VEB=6V, IC=0
IEBO
hFE
* DC
Current Gain
Typ.
Max.
V
6
VCE=4V, IC=3A
Units
V
V
50
10
mA
10
mA
180
VCE(sat)
Collector-Emitter Saturation Voltage
IC=5A, IB=0.5A
Cob
Output Capacitance
VCB=10V, f=1MHz
250
pF
VCE=5V, IC=1A
30
MHz
fT
Current Gain Bandwidth
* Pulse Test: Pulse Width£300ms, Duty Cycle£2%
Product
0.5
V
hFE Classification
Classification
R
O
Y
hFE
50 ~ 100
70 ~ 140
90 ~ 180
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
www.fairchildsemi.com
1
FJA4310 — NPN Epitaxial Silicon Transistor
October 2008
FJA4310 — NPN Epitaxial Silicon Transistor
Typical Characteristics
IB = 300mA
10
IB = 250mA
9
VCE = 4 V
IB = 150mA
8
7
hFE, DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
1000
IB = 200mA
IB = 400mA
IB = 100mA
6
5
IB = 50mA
4
3
2
o
Ta = 25 C
o
Ta = 125 C
100
o
Ta = - 25 C
IB = 20mA
1
0
0
1
2
3
10
0.1
4
1
10
IC [A], COLLECTOR CURRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. DC current Gain
3.0
1
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
IC = 10 IB
2.5
2.0
1.5
1.0
0.5
IC= - 10A
IC= - 5A
0.0
0.0
0.4
0.8
1.2
1.6
o
Ta = 125 C
0.1
o
Ta = 25 C
o
Ta = - 25 C
0.01
0.01
2.0
0.1
1
10
IC [A], COLLECTOR CURRENT
IB [A], BASE CURRENT
Figure 3. VCE(sat) vs. IB Characteristics
Figure 4. Collector-Emitter Saturation Voltage
10
8
6
o
4
2
Ta = 25 C
o
Ta = 125 C
10
o
0.1
1.0
1.5
10
100
VCE [V], COLLECTOR-EMITTER VOLTAGE
VBE [V], Base-Emitter On VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
t=100ms
TC = 25 C
Single Pulse
o
0.5
IC (DC)
1
Ta = - 25 C
0
0.0
t=10ms
IC (Pulse)
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
VCE = 4 V
www.fairchildsemi.com
2
FJA4310 — NPN Epitaxial Silicon Transistor
Typical Characteristics (Continued)
PC[W], COLLECTOR POWER DISSIPATION
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
o
TC[ C], CASE TEMPERATURE
Figure 7. Power Derating
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
www.fairchildsemi.com
3
FJA4310 — NPN Epitaxial Silicon Transistor
Package Dimension (TO-3P)
5.00
4.60
15.80
15.40
1.65
1.45
5.20
4.80
(R0.50)
20.10
19.70
18.90
18.50
3.70
3.30
(1.85)
2.20
1.80
2.60
2.20
20.30
19.70
3.20
2.80
0.55
1.20
0.80
1
3
5.45
0.75
0.55
5.45
(R0.50)
NOTES:
A) THIS PACKAGE CONFORMS TO EIAJ
SC-65 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONING AND TOLERANCING PER
ASME14.5 1973.
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
E) DRAWING FILE NAME: TO3P03AREV2.
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
www.fairchildsemi.com
4
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
FJA4310 Rev. C1
www.fairchildsemi.com
5
FJA4310 NPN Epitaxial Silicon Transistor
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