IDT IDT70P248 Very low power 1.8v 8k/4k x 16 dual-port static ram Datasheet

VERY LOW POWER 1.8V
8K/4K x 16 DUAL-PORT
STATIC RAM
Features
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True Dual-Ported memory cells which allow simultaneous
reads of the same memory location
High-speed access
– Industrial: 55ns (max.)
Low-power operation
IDT70P258/248L
Active: 27mW (typ.)
Standby: 3.6µW (typ.)
Separate upper-byte and lower-byte control for multiplexed
bus compatibility
IDT70P258/248 easily expands data bus width to 32 bits or
more using the Master/Slave select when cascading more
than one device
◆
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IDT70P258/248L
Supports 3.0V, 2.5V and 1.8V I/O's
M/S = VDD for BUSY output flag on Master
M/S = VSS for BUSY input on Slave
Input Read Register
Output Drive Register
BUSY and Interrupt Flag
On-chip port arbitration logic
Full on-chip hardware support of semaphore signaling
between ports
Fully asynchronous operation from either port
LVTTL-compatible, single 1.8V (±100mV) power supply
Available in 100 Ball 0.5mm-pitch BGA
Industrial temperature range (-40°C to +85°C)
Functional Block Diagram
R/WL
UBL
R/WR
UBR
LBL
CEL
OEL
LBR
CER
OER
I/O8L-I/O15L
I/O8R-I/O15R
I/O
Control
I/O0L-I/O7L
I/O
Control
I/O0R-I/O7R
(2,3)
(2,3)
BUSYL
A12L(1)
A0L
,
BUSYR
Address
Decoder
Address
Decoder
MEMORY
ARRAY
CEL
R/WL
IRR0,IRR1
A0R
CER
INPUT
READ REGISTER
AND
OUTPUT
DRIVE REGISTER
OEL
A12R(1)
OER
R/WR
ODR 0 - ODR4
SFEN
13
CEL
OEL
R/WL
SEML
(3)
INTL
13
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
M/S
CER
OER
R/WR
SEMR
INTR(3)
5675 drw 01
NOTES:
1. A12X is a NC for IDT70P248.
2. (MASTER): BUSY is output; (SLAVE): BUSY is input.
3. BUSY outputs and INT outputs are non-tri-stated push-pull.
APRIL 2004
1
©2004 Integrated Device Technology, Inc.
DSC-5675/4
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Description
The IDT70P258/248 is a very low power 8K/4K x 16 Dual-Port
Static RAM. The IDT70P258/248 is designed to be used as a stand-alone
128/64K-bit Dual-Port SRAM or as a combination MASTER/SLAVE DualPort SRAM for 32-bit-or-more word systems. Using the IDT MASTER/
SLAVE Dual-Port SRAM approach in 32-bit or wider memory system
applications results in full-speed, error-free operation without the need for
additional discrete logic.
This device provides two independent ports with separate control,
address, and I/O pins that permit independent, asynchronous access for
reads or writes to any location in memory. An automatic power down
feature controlled by CE permits the on-chip circuitry of each port to enter
a very low standby power mode.
Fabricated using IDT’s CMOS high-performance technology,
these devices typically operate on only 27mW of power.
The IDT70P258/248 is packaged in a 100 ball 0.5mm- pitch Ball
Grid Array. The package is a 1mm thick and designed to fit in wireless
handset applications.
Pin Configurations(2,3,4)
70P258/248BY
BY-100
100-Ball 0.5mm Pitch BGA
Top View(5)
09/04/03
A1
A5R
B1
A3R
C1
A0R
D1
A2
A8R
B2
A4R
C2
A1R
D2
A3
A11R
B3
A7R
C3
A2R
D3
A4
UBR
B4
A9R
C4
A6R
D4
ODR4 ODR2 BUSYR INT R
E1
Vss
F1
E2
M/S
F2
E3
ODR3
F3
SFEN ODR1 BUSYL
G1
ODR 0
H1
A0L
J1
A3L
K1
A 6L
G2
A 2L
H2
A4L
J2
A7L
K2
A8L
G3
A5L
H3
A9L
J3
A10L
K3
A 11L
E4
INTL
F4
A1L
G4
A12L(1)
H4
LB L
J4
IRR0
K4
UBL
A5
Vss
B5
CER
C5
LBR
D5
A10R
E5
Vss
F5
VDD
G5
OEL
H5
CEL
J5
VDD
K5
A6
A7
A8
A9
A10
SEMR I/O15R I/O12R I/O10R
B6
R/WR
C6
IRR 1
B7
OER
C7
B8
VDD
C8
D7
A12R(1)
I/O13R I/O8R
E6
E7
F6
Vss
G6
B10
I/O9R I/O6R
C9
C10
I/O14R I/O11R I/O7R
D6
Vss
B9
I/O4R
F7
I/O3R
G7
D8
E8
VDD
F8
Vss
D9
Vss
D10
I/O5R
E9
I/O2R
E10
I/O1R
F9
Vss
F10
I/O0R I/O15L VDDQL
G8
G9
G10
I/O3L I/O11L I/O12L I/O14L I/O13L
H6
H7
I/O1L VDDQL
J6
Vss
K6
SEML R/W L
J7
I/O4L
K7
I/O0L
H8
NC
J8
I/O6L
K8
H9
H10
NC
I/O10L
J9
J10
I/O8L
I/O9L
K10
K9
I/O2L I/O5L
I/O7L
5675 drw 02b
NOTES:
1. A12X is a NC for IDT70P248.
2. All VDD pins must be connected to power supply.
3. All V SS pins must be connected to ground supply.
4. BY100-1 package body is approximately 6mm x 6mm x 1mm, ball pitch 0.5mm.
5. This package code is used to reference the package diagram.
6. This text does not indicate orientation of the actual part-marking.
6.42
2
,
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Pin Names
Left Port
Right Port
Names
CEL
CER
Chip Enable (Input)
R/WL
R/WR
Read/Write Enable (Input)
OEL
OER
A0L - A12L
(1)
Output Enable (Input)
(1)
A 0R - A 12R
Address (Input)
I/O0L - I/O15L
I/O0R - I/O15R
Data Input/Output
SEML
SEMR
Semaphore Enable (Input)
UBL
UBR
Upper Byte Select (Input)
LBL
LBR
Lower Byte Select (Input)
INTL
INTR
Interrupt Flag (Output)
BUSYL
BUSYR
Busy Flag
IRR0, IRR1
Input Read Register (Input)
ODR0 - ODR4
Output Drive Register (Output)
SFEN(2)
Special Function Enable (Input)
M/S
Master or Slave Select (Input)
VDD
Power (1.8V) (Input)
NOTE:
1. A12X is a NC for IDT70P248.
2. SFEN is active when either CEL = V IL or CER = VIL.
SFEN is inactive when CEL = CER = VIH.
Left Port I/O Supply Voltage
(3.0V) (Input)
V DDQL
Ground (0V) (Input)
VSS
5675 tbl 01
Truth Table I: Non-Contention Read/Write Control
Inputs(1)
Outputs
CE
R/W
OE
UB
LB
SEM
I/O8-15
I/O0-7
H
X
X
X
X
H
High-Z
High-Z
Deselected: Power Down
X
X
X
H
H
H
High-Z
High-Z
Both Bytes Deselected
L
L
X
L
H
H
DATAIN
High-Z
Write to Upper Byte Only
L
L
X
H
L
H
High-Z
DATAIN
Write to Lower Byte Only
L
L
X
L
L
H
DATAIN
DATAIN
Write to Both Bytes
L
H
L
L
H
H
DATAOUT
High-Z
Read Upper Byte Only
L
H
L
H
L
H
High-Z
DATAOUT
Read Lower Byte Only
L
H
L
L
L
H
DATAOUT
DATAOUT
Read Both Bytes
X
X
H
X
X
X
High-Z
High-Z
Outputs Disabled
Mode
5675 tbl 02
NOTE:
1. A0L — A12L ≠ A0R — A12R
6.42
3
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Truth Table II: Semaphore Read/Write Control(1)
Inputs
Outputs
CE
R/W
OE
UB
LB
SEM
I/O8-15
I/O0-7
H
H
L
X
X
L
DATAOUT
DATAOUT
Read Data in Semaphore Flag
X
H
L
H
H
L
DATAOUT
DATAOUT
Read Data in Semaphore Flag
H
↑
X
X
X
L
DATA IN
DATA IN
Write DIN0 into Semaphore Flag
X
↑
X
H
H
L
DATA IN
DATA IN
Write DIN0 into Semaphore Flag
____
Not Allowed
____
Not Allowed
L
X
X
L
X
L
____
L
X
X
X
L
L
____
Mode
5675 tbl 03
NOTE:
1. There are eight semaphore flags written to via I/O0 and read from all of the I/O's (I/O0-I/O15 ). These eight semaphores are addressed by A0-A2.
Absolute Maximum Ratings(1)
Symbol
Rating
Commercial
& Industrial
Unit
-0.5 to VDDMAX +0.3V(4)
V
VTERM(2)
Terminal Voltage with
Respect to GND
TBIAS (3)
Temperature Under Bias
-55 to +125
o
C
TSTG
Storage Temperature
-65 to +150
o
C
TJN
Junction Temperature
+150
o
C
IOUT (for
VDDQL = 3.0V)
DC Output Current
20
mA
IOUT (for
VDDQL = 1.8V)
DC Output Current
20
mA
5675 tbl 04
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VTERM must not exceed VDD + 0.3V for more than 25% of the cycle time or 10ns
maximum, and is limited to < 20mA for the period over VTERM = VDD + 0.3V.
3. Ambient Temperature under DC Bias. No AC Conditions. Chip Deselected.
4. VDDQLMAX + 0.3V for left port.
6.42
4
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Capacitance
Maximum Operating Temperature
and Supply Voltage(1)
(TA = +25°C, f = 1.0MHz)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions(2)
Max.
Unit
VIN = 3dV
9
pF
VOUT = 3dV
11
pF
Grade
Industrial
Ambient
Temperature
GND
VDD
-40OC to +85OC
0V
1.8V + 100mV
5675 tbl 05
5675 tbl 07
NOTES:
1. This parameter is determined by device characterization but is not production
tested.
2. 3dV references the interpolated capacitance when the input and output signals
switch from 0V to 3V or from 3V to 0V.
NOTES:
1. This is the parameter TA. This is the "instant on" case temperature.
Recommended DC Operating Conditions (VDDQL = 3.0V±300mV)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage (4)
1.7
1.8
1.9
V
VDDQL
Left Port Supply Voltage
2.7
3.0
3.3
V
VSS
Ground
0
0
0
V
VIHL
Input High Voltage (VDDQL = 3.0V)
2.0
___
VDDQL + 0.2
V
VILL
Input Low Voltage (VDDQL = 3.0V)
-0.2
___
0.6
V
VIHR
Input High Voltage (3)
1.2
___
VDD + 0.2
V
VILR
Input Low Voltage(3)
-0.2
___
0.4
V
5675 tbl 06
Recommended DC Operating Conditions (VDDQL = 2.5V±100mV)
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Supply Voltage (4)
1.7
1.8
1.9
V
VDDQL
Left Port Supply Voltage
2.4
2.5
2.6
V
VSS
Ground
0
0
0
V
VIHL
Input High Voltage (VDDQL = 2.5V)
1.7
___
VDDQL + 0.3
V
VILL
Input Low Voltage (VDDQL = 2.5V)
-0.3
___
0.7
V
VIHR
Input High Voltage (3)
1.2
___
VDD + 0.2
V
VILR
Input Low Voltage(3)
-0.2
___
0.4
V
5675 tbl 06_5
NOTES:
1. VIL > -1.5V for pulse width less than 10ns.
2. VTERM must not exceed VDD + 0.3V.
3. SFEN operates at the 1.8V VIH and VIL voltage levels.
4. M/S operates at the VDD and VSS voltage levels.
6.42
5
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 1.8V ± 100mV)
Symbol
Parameter
Min.
Max.
Unit
ILI
Input Leakage Current
VDD = 1.8V, V IN = 0V to V DD
___
1
µA
ILO
Output Leakage Current
CE = VIH, VOUT = 0V to VDD
___
1
µA
VOLL
Output Low Voltage (VDDQL = 3.0V)
IOLL = +2mA
___
0.4
V
VOHL
Output High Voltage (VDDQL = 3.0V)
IOHL = -2mA
2.1
___
V
VOLL
Output Low Voltage (VDDQL = 2.5V)
IOLL = +2mA
___
0.4
V
VOHL
Output High Voltage (VDDQL = 2.5V)
IOHL = -2mA
2.0
___
V
VOLR
Output Low Voltage
IOLR = +0.1mA
___
0.2
V
VOHR
Output High Voltage
IOHR = -0.1mA
VDD - 0.2V
___
V
Test Conditions
5675 tbl 08
DC Electrical Characteristics Over the Operating
Temperature and Supply Voltage Range (VDD = 1.8V ±100mV)
70P258/248
Ind'l Only
Symbol
Parameter
Test Condition
Version
Typ.(1)
Max.
Unit
IDD
Dynamic Operating Current
(Both Ports Active)
CE = V IL, Outputs Open
f = fMAX(2)
IND'L
L
15
25
mA
ISB1
Standby Current (Both Ports
Inactive)
CER and CEL = V IH, SEMR = SEML = V IH
f = fMAX(2)
IND'L
L
2
8
µA
ISB2
Standby Current (One Port
Inactive, One Port Active)
CE"A" = VIL and CE"B" = V IH(3), Active Port Outputs Open
f = fMAX(2)
IND'L
L
8.5
14
mA
ISB3
Full Standby Current (Both
Ports Inactive - CMOS Level
Inputs)
Both Ports CEL and CER > V DD - 0.2V,
SEML and SEMR > V DD - 0.2V, V IN > VDD - 0.2V or V IN < 0.2V
M/S = V DD or V SS(4), f = 0
IND'L
L
2
8
µA
ISB4
Standby Current (One Port
Inactive, One Port Active CMOS Level Inputs)
CE"A" < 0.2V and CE"B" > VDD - 0.2V (4)
V IN > VDD - 0.2V or V IN < 0.2V, Active Port Outputs Open
f = fMAX(2)
IND'L
L
8.5
14
mA
5675 tbl 09
NOTES:
1. VDD = 1.8V, TA = +25°C, and are not production tested. IDD DC = 15mA (typ.)
2. At f = fMAX , address and control lines are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions”.
3. Port "A" may be either left or right port. Port "B" is the opposite from port "A".
4. If M/S = V SS, then f BUSYL = fBUSYR = 0 for full standby mode.
6.42
6
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
AC Test Conditions
Input Pulse Levels
GND to 3.0V/GND to 1.8V
Input Rise/Fall Times
3ns Max.
Input Timing Reference Levels
1.5V/0.9V
Output Reference Levels
1.5V/0.9V
Output Load
Figure 1
5675 tbl 10
3.0V/1.8V
3.0V
1.8V
R1
1022Ω
13500Ω
R2
729Ω
10800Ω
R1
R2
30pF(1)
5675 tbl 10_5
5675 drw 03
Figure 1. AC Output Test Load
(5pF for tLZ , tHZ, tWZ, tOW )
Timing of Power-Up Power-Down
CE
ICC
tPU
tPD
50%
ISB
50
%
,
5675 drw 04
6.42
7
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range(4)
70P258/248
Ind'l Only
Symbol
Parameter
Min.
Max.
Unit
Read Cycle Time
55
____
ns
Address Access Time
____
55
ns
Chip Enable Access Time
(3)
____
55
ns
tABE
Byte Enable Access Time
(3)
____
55
ns
tAOE
Output Enable Access Time (3)
____
30
ns
tOH
Output Hold from Address Change
5
____
ns
(1,2,5)
5
____
ns
(1,2,5)
____
25
ns
0
____
ns
____
55
ns
ns
READ CYCLE
tRC
tAA
tACE
tLZ
tHZ
tPU
Output Low-Z Time
Output High-Z Time
Chip Enable to Power Up Time
(1,2)
(1,2)
tPD
Chip Disable to Power Down Time
tSOP
Semaphore Flag Update Pulse (OE or SEM)
15
____
tSAA
Semaphore Address Access (3)
____
55
ns
5675 tbl 11
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load.
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access RAM, CE = VIL, UB or LB = VIL, and SEM = VIH. To access semaphore, CE = VIH or UB and LB = VIH, and SEM = VIL.
4. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over
voltage and temperature, the actual tDH will always be smaller than the actual tOW .
5. At any given temperature and voltage condition, t HZ is less than tLZ for any given device.
6.42
8
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Waveform of Read Cycles(5)
tRC
ADDR
CE
tAA (4)
(4)
tACE
(4)
tAOE
OE
(4)
tABE
UB, LB
R/W
tLZ
DATAOUT
tOH
(1)
(4)
VALID DATA
tHZ
(2)
BUSYOUT
(3,4)
tBDD
,
5675 drw 05
NOTES:
1. Timing depends on which signal is asserted last, OE, CE, LB, or UB.
2. Timing depends on which signal is de-asserted first CE, OE, LB, or UB.
3. tBDD delay is required only in cases where opposite port is completing a write operation to the same address location. For simultaneous read operations BUSY has no relation
to valid output data.
4. Start of valid data depends on which timing becomes effective last tABE, tAOE, tACE, tAA or tBDD.
5. SEM = VIH.
6.42
9
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(4)
70P258/248
Ind'l Only
Symbol
Parameter
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
55
____
ns
tEW
Chip Enable to End-of-Write (3)
45
____
ns
tAW
Address Valid to End-of-Write
45
____
ns
0
____
ns
40
____
ns
ns
tAS
tWP
Address Set-up Time
(3)
Write Pulse Width
tWR
Write Recovery Time
0
____
tDW
Data Valid to End-of-Write
30
____
ns
tHZ
Output High-Z Time (1,2)
____
25
ns
ns
tDH
tWZ
Data Hold Time
(4)
0
____
(1,2)
____
25
ns
(1,2,4)
0
____
ns
ns
Write Enable to Output in High-Z
tOW
Output Active from End-of-Write
tSWRD
SEM Flag Write to Read Time
10
____
tSPS
SEM Flag Contention Window
10
____
ns
5675 tbl 12
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load.
2. This parameter is guaranteed by device characterization, but is not production tested.
3. To access SRAM, CE = VIL, UB or LB = VIL, SEM = V IH. To access semaphore, CE = VIH or UB and LB = VIH and SEM = VIL. Either condition must be valid for
the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over
voltage and temperature, the actual tDH will always be smaller than the actual tOW .
6.42
10
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Timing Waveform of Write Cycle No. 1, R/W Controlled Timing(1,5,8)
tWC
ADDRESS
tHZ (7)
OE
tAW
(9)
CE or SEM
CE or SEM
(9)
tAS (6)
tWR (3)
tWP (2)
R/W
tWZ (7)
tOW
(4)
DATAOUT
(4)
tDW
tDH
DATAIN
,
5675 drw 06
Timing Waveform of Write Cycle No. 2, CE, UB, LB Controlled Timing(1,5)
tWC
ADDRESS
CE or SEM
UB or LB
tAW
(9)
(9)
tAS(6)
tWR(3)
tEW (2)
R/W
tDW
tDH
DATAIN
5675 drw 07
,,
NOTES:
1. R/W or CE or UB & LB must be high during all address transitions.
2. A write occurs during the overlap (tEW or tWP) of a low UB or LB and a LOW CE and a LOW R/W for memory array writing cycle.
3. tWR is measured from the earlier of CE or R/W going HIGH (or SEM going LOW) to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must not be applied.
5. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state.
6. Timing depends on which enable signal is asserted last, CE, R/W or byte control.
7. This parameter is guaranteed by device characterization, but is not production tested.Transition is measured 0mV from low or high-impedance voltage with Output
Test Load.
8. If OE is LOW during R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to turn off and data to be placed on the
bus for the required tDW. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP.
9. To access SRAM, CE = VIL, UB or LB = VIL, SEM = VIH. To access semaphore, CE = VIH or UB and LB = VIH and SEM = VIL. Either condition must be valid for
the entire tEW time.
6.42
11
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Timing Waveform of Semaphore Read after Write Timing, Either Side(1)
tO
H
tSAA
A0-A2
VALID ADDRESS
tWR
tAW
VALID ADDRESS
tACE
tEW
SEM
tDW
DATAIN
VALID
I/O0
tAS
tWP
tSOP
DATA OUT
VALID(2)
tDH
R/W
tSWRD
tAOE
OE
Write Cycle
Read Cycle
,
5675 drw 08
NOTES:
1. CE = VIH or UB & LB = VIH for the duration of the above timing (both write and read cycle).
2. “DATAOUT VALID” represents all I/O's (I/O 0-I/O15)equal to the semaphore value.
Timing Waveform of Semaphore Write Contention(1,3,4)
A0"A"-A2"A"
(2)
SIDE
"A"
MATCH
R/W"A"
SEM"A"
tSPS
A0"B"-A2"B"
(2)
SIDE
"B"
MATCH
R/W"B"
SEM"B"
5675 drw 09
NOTES:
1. D0R = D0L = VIL, CER = CEL = VIH, or Both UB & LB = V IH.
2. All timing is the same for left or right port. “A” may be either left or right port. “B” is the opposite port from “A”.
3. This parameter is measured from R/W"A" or SEM"A" going HIGH to R/W"B" or SEM"B" going HIGH.
4. If t SPS is not satisfied there is no guarantee which side will be granted the semaphore flag.
6.42
12
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
70P258/248
Ind'l Only
Symbol
Parameter
Min.
Max.
Unit
BUSY TIMING (M/S = VDD)
tBAA
BUSY Access Time from Address Match
____
45
ns
tBDA
BUSY Disable Time from Address Not Matched
____
45
ns
tBAC
BUSY Access Time from Chip Enable LOW
____
45
ns
tBDC
BUSY Disable Time from Chip Enable HIGH
____
45
ns
5
____
ns
(2)
tAPS
Arbitration Priority Set-up Time
tBDD
BUSY Disable to Valid Data(3)
____
40
ns
tWH
Write Hold After BUSY(5)
35
____
ns
BUSY TIMING (M/S = VSS)
tWB
BUSY Input to Write (4)
0
____
ns
tWH
Write Hold After BUSY(5)
35
____
ns
ns
PORT-TO-PORT DELAY TIMING
tWDD
Write Pulse to Data Delay (1)
____
80
tDDD
Write Data Valid to Read Data Delay (1)
____
65
ns
5675 tbl 13
NOTES:
1. Port-to-port delay through SRAM cells from writing port to reading port, refer to "Timing Waveform of Read With BUSY (M/S = VDD)" or "Timing Waveform of Write
With Port-To-Port Delay (M/S = VSS)".
2. To ensure that the earlier of the two ports wins.
3. tBDD is a calculated parameter and is the greater of 0ns, tWDD – tWP (actual) or tDDD – tDW (actual).
4. To ensure that the write cycle is inhibited during contention.
5. To ensure that a write cycle is completed after contention.
6.42
13
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Timing Waveform of Read with BUSY(2,4,5) (M/S = VIH)
tWC
MATCH
ADDR"A"
tWP
R/W"A"
tDW
tDH
VALID
DATAIN "A"
tAPS
(1)
MATCH
ADDR"B"
tBAA
tBDA
tBDD
BUSY"B"
tWDD
DATA OUT "B"
VALID
tDDD(3)
NOTES:
1. To ensure that the earlier of the two ports wins. tAPS is ignored for M/S = VIL (slave).
2. CEL = CER = VIL.
3. OE = VIL for the reading port.
4. If M/S = VSS (slave), BUSY is an input. Then for this example BUSY "A" = VIH and BUSY"B" input is shown above.
5. All timing is the same for both left and right ports. Port "A" may be either the left or right Port. Port "B" is the port opposite from port "A".
Timing Waveform of Slave Write (M/S = VIL)
tWP
R/W"A"
tWB(3)
BUSY"B"
tWH(1)
R/W"B"
(2)
5675 drw 11 ,
NOTES:
1. tWH must be met for both BUSY input (slave) and output (master).
2. Busy is asserted on port "B" blocking R/W"B" , until BUSY"B" goes HIGH.
3. tWB is only for the “slave” version.
6.42
14
,
5675 drw 10
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Waveform of BUSY Arbitration Controlled by CE Timing(1) (M/S = VIH)
ADDR"A"
and "B"
ADDRESSES MATCH
CE"A"
tAPS (2)
CE"B"
tBAC
tBDC
BUSY"B"
,
5675 drw 12
Waveform of BUSY Arbitration Cycle Controlled by Address Match
Timing(1) (M/S = VIH)
ADDR"A"
ADDRESS "N"
tAPS
ADDR"B"
(2)
MATCHING ADDRESS "N"
tBAA
tBDA
BUSY"B"
,
5675 drw 13
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. If tAPS is not satisfied, the BUSY signal will be asserted on one side or another but there is no guarantee on which side BUSY will be asserted.
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage Range
70P258/248
Ind'l Only
Symbol
Parameter
Min.
Max.
Unit
INTERRUPT TIMING
tAS
Address Set-up Time
0
____
ns
tWR
Write Recovery Time
0
____
ns
Interrupt Set Time
____
45
ns
Interrupt Reset Time
____
45
ns
tINS
tINR
5675 tbl 14
6.42
15
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Waveform of Interrupt Timing(1)
tWC
(2)
ADDR"A"
INTERRUPT SET ADDRESS
tAS (3)
tWR (4)
CE"A"
R/W"A"
tINS
(3)
INT"B"
5675 drw 14
,
tRC
INTERRUPT CLEAR ADDRESS
ADDR"B"
(2)
tAS (3)
CE"B"
OE"B"
tINR(3)
INT"B"
,
5675 drw 15
NOTES:
1. All timing is the same for left and right ports. Port “A” may be either the left or right port. Port “B” is the port opposite from “A”.
2. See Interrupt Truth Table III.
3. Timing depends on which enable signal (CE or R/W) is asserted last.
4. Timing depends on which enable signal (CE or R/W) is de-asserted first.
6.42
16
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Truth Table III — Interrupt Flag(1)
Left Port
CEL
R/WL
OEL
Right Port
INTL
(4)
A12L-A0L
CER
R/WR
OER
A12R-A0R(4)
INTR
Function
(2)
L
L
X
1FFF
X
X
X
X
X
L
Set Right INTR Flag
X
X
X
X
X
X
L
L
1FFF
H(3)
Reset Right INTR Flag
X
X
X
X
L(3)
L
L
X
1FFE
X
Set Left INTL Flag
X
L
L
1FFE
H(2)
X
X
X
X
X
Reset Left INTL Flag
NOTES:
1. Assumes BUSYL = BUSY R = VIH.
2. If BUSY L = VIL, then no change.
3. If BUSYR = VIL, then no change.
4. A12X is a NC for IDT70P248, therefore Interrrupt Addresses are FFF and FFE.
5675 tbl 15
Truth Table IV — Address BUSY
Arbitration
Inputs
Outputs
CEL
CER
A0L-A12L
A0R-A12R
BUSYL(1)
BUSYR(1)
Function
X
X
NO MATCH
H
H
Normal
H
X
MATCH
H
H
Normal
X
H
MATCH
H
H
Normal
L
L
MATCH
(2)
(2)
Write Inhibit(3)
5675 tbl 16
NOTES:
1. Pins BUSYL and BUSYR are both outputs when the part is configured as a master. Both are inputs when configured as a slave. BUSY outputs on the
IDT70P258/248 are push pull, not open drain outputs. On slaves the BUSY input internally inhibits writes.
2. L if the inputs to the opposite port were stable prior to the address and enable inputs of this port. VIH if the inputs to the opposite port became stable after the address
and enable inputs of this port. If tAPS is not met, either BUSYL or BUSYR = LOW will result. BUSYL and BUSYR outputs cannot be LOW simultaneously.
3. Writes to the left port are internally ignored when BUSY L outputs are driving LOW regardless of actual logic level on the pin. Writes to the right port are internally ignored when
BUSYR outputs are driving LOW regardless of actual logic level on the pin.
6.42
17
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Truth Table V — Example of Semaphore Procurement Sequence(1,2,3)
Functions
D0 - D15 Left
D0 - D15 Right
Status
No Action
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Right Port Writes "0" to Semaphore
0
1
No change. Right side has no write access to semaphore
Left Port Writes "1" to Semaphore
1
0
Right port obtains semaphore token
Left Port Writes "0" to Semaphore
1
0
No change. Left port has no write access to semaphore
Right Port Writes "1" to Semaphore
0
1
Left port obtains semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
Right Port Writes "0" to Semaphore
1
0
Right port has semaphore token
Right Port Writes "1" to Semaphore
1
1
Semaphore free
Left Port Writes "0" to Semaphore
0
1
Left port has semaphore token
Left Port Writes "1" to Semaphore
1
1
Semaphore free
5675 tbl 17
NOTES:
1. This table denotes a sequence of events for only one of the eight semaphores on the IDT70P258/248.
2. There are eight semaphore flags written to via I/O 0 and read from all I/O's (I/O0-I/O15 ). These eight semaphores are addressed by A0-A2.
3. CE = VIH, SEM = VIL to access the semaphores. Refer to the Semaphore Read/Write Control Truth Table.
Truth Table VI — Input Read Register Operation(3)
SFEN
CE
R/W
OE
UB
LB
ADDR
I/O0-I/O1
I/O2-I/O15
Mode
H
L
H
L
L(1)
L(1)
x0000 - Max
VALID(1)
VALID(1)
Standard Memory Access
L
L
H
L
X
L
x0000
VALID(2)
X
IRR Read (3)
5675 tbl 18
NOTES:
1. UB or LB = VIL. If LB = VIL, then I/O0 - I/O 7 are VALID. If UB = VIL, then I/O 8 - I/O15 are VALID.
2. LB must be active (LB = VIL) for these bits to be valid.
3. SFEN = V IL to activate IRR reads.
Truth Table VII — Output Drive Register Operation(5)
SFEN
CE
R/W
H
L
H
L
L
L
L
L
H
OE
UB
LB
(1)
(2)
(2)
X
X
L
L
X
X
L
L
L
ADDR
x0000 - Max
I/O0-I/O4
(2)
VALID
I/O5-I/O15
(2)
VALID
Mode
Standard Memory Access
x0001
VALID(3)
X
ODR Write (4,5)
x0001
(3)
X
ODR Read (5)
VALID
5675 tbl 19
NOTES:
1. Output enable must be low (OE = Vil) during reads for valid data to be output.
2. UB or LB = VIL. If LB = VIL, then I/O0 - I/O 7 are VALID. If UB = V IL, then I/O8 - I/O15 are VALID.
3. LB must be active (LB = VIL) for these bits to be valid.
4. During ODR writes data will also be written to the memory.
5. SFEN = VIL to activate ODR reads and writes.
6.42
18
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Device 1
IRR0
Industrial Temperature Range
Device 2
IRR1
Input Read Register
(ADDRESS x0000)
A0L - A12L
I/O0L - I/O15L
A0R - A12R
Address & I/O
Control
I/O0R - I/O15R
Memory
Array
5675 drw 16
Figure 3. Input Read Register
Device 2
Device 1
Device 4
Device 3
Device 5
ODR0 ODR1 ODR2 ODR3 ODR4
Output Drive Register
(ADDRESS x0001)
A0L - A12L
A0R - A12R
Address & I/O
Control
I/O0L - I/O15L
I/O0R - I/O15R
Memory
Array
5675 drw 17
Figure 4. Output Drive Register
6.42
19
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
BUSYL
MASTER
Dual Port
SRAM
BUSYL
CE
SLAVE
Dual Port
SRAM
BUSYL
BUSYR
SLAVE
Dual Port
SRAM
BUSYL
CE
BUSYR
CE
BUSYR
DECODER
MASTER
Dual Port
SRAM
BUSYL
Industrial Temperature Range
CE
BUSYR
BUSYR
,
5675 drw 18
Figure 3. Busy and chip enable routing for both width and depth expansion with IDT70P258/248 SRAMs.
Functional Description
The IDT70P258/248 provides two ports with separate control, address and I/O pins that permit independent access to any location in
memory. The IDT70P258/248 has an automatic power down feature
controlled by CE. The CE controls on-chip power down circuitry that
permits the respective port to go into a standby mode when not selected
(CE HIGH). When a port is enabled, access to the entire memory array
is permitted.
Interrupts
If the user chooses the interrupt function, a memory location (mail
box or message center) is assigned to each port. The left port interrupt
flag (INTL) is asserted when the right port writes to memory location 1FFE
(HEX) (FFE for IDT70P248), where a write is defined as the CE=R/W=VIL
per Truth Table III. The left port clears the interrupt by accessing address
location 1FFE when CER = OER = VIL, R/W is a "don't care". Likewise,
the right port interrupt flag (INTR) is asserted when the left port writes
to memory location 1FFF (HEX) (FFF for IDT70P248) and to clear the
interrupt flag (INTR), the right port must read the memory location 1FFF.
The message (16 bits) at 1FFE or 1FFF is user-defined, since it is an
addressable SRAM location. If the interrupt function is not used, address
locations 1FFE and 1FFF are not used as mail boxes, but as part of the
random access memory. Refer to Truth Table IIII for the interrupt
operation.
Busy Logic
Busy Logic provides a hardware indication that both ports of the
SRAM have accessed the same location at the same time. It also
allows one of the two accesses to proceed and signals the other side
that the SRAM is “busy”. The BUSY pin can then be used to stall the access
until the operation on the other side is completed. If a write operation has
been attemp-ted from the side that receives a BUSY indication, the write
signal is gated internally to prevent the write from proceeding.
The use of BUSY logic is not required or desirable for all applications.
In some cases it may be useful to logically OR the BUSY outputs together
and use any BUSY indication as an interrupt source to flag the event of
an illegal or illogical operation. If the write inhibit function of BUSY logic is
not desirable, the BUSY logic can be disabled by placing the part in slave
mode with the M/S pin. Once in slave mode the BUSY pin operates solely
as a write inhibit input pin. Normal operation can be programmed by tying
the BUSY pins HIGH. If desired, unintended write operations can be
prevented to a port by tying the BUSY pin for that port LOW.
The busy outputs on the IDT 70P258/248 SRAM in master mode, are
push-pull type outputs and do not require pull up resistors to operate. If
these SRAMs are being expanded in depth, then the BUSY indication for
the resulting array requires the use of an external AND gate.
Width Expansion with BUSY Logic
Master/Slave Arrays
When expanding an IDT70P258/248 SRAM array in width while
using busy logic, one master part is used to decide which side of the SRAM
array will receive a BUSY indication, and to output that indication. Any
number of slaves to be addressed in the same address range as the
master, use the BUSY signal as a write inhibit signal. Thus on the
IDT70P258/248 SRAM the BUSY pin is an output if the part is used as a
master (M/S pin = VDD), and the BUSY pin is an input if the part used as
a slave (M/S pin = VSS) as shown in Figure 3.
If two or more master parts were used when expanding in width, a
split decision could result with one master indicating BUSY on one side
of the array and another master indicating BUSY on one other side of
the array. This would inhibit the write operations from one port for part
of a word and inhibit the write operations from the other port for the
other part of the word.
The BUSY arbitration, on a master, is based on the chip enable and
address signals only. It ignores whether an access is a read or write.
In a master/slave array, both address and chip enable must be valid
long enough for a BUSY flag to be output from the master before the
actual write pulse can be initiated with either the R/W signal or the byte
enables. Failure to observe this timing can result in a glitched internal
write inhibit signal and corrupted data in the slave.
Input Read Register
The Input Read Register (IRR) of the IDT70P258/248 captures the
status of two external binary input devices connected to the Input Read pins
(e.g. DIP switches). The contents of the IRR are read as a standard
memory access to address x0000 from either port and the data is output
via the standard I/Os (Truth Table VI). During Input Register reads I/O0
- I/O1 are valid bits and I/O2 - I/O15 are "Dont' Care". Writes to address
x0000 are not allowed from either port. When SFEN = VIL, the IRR is active
and address x0000 is not available for standard memory operations.
When SFEN = VIH, the IRR is inactive and address x0000 can be used
as part of the main memory. The IRR supports inputs up to 3.5V (VIL < 0.4V,
VIH > 1.4V). Refer to Figure 3 and Truth Table VI for Input Read Register
operation.
6.42
20
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Output Drive Register
How the Semaphore Flags Work
The Output Drive Register (ODR) of the IDT70P258/248 determines
the state of up to five external binary-state devices by providing a path to
VSS for the external circuit. The five external devices supported by the ODR
can operate at different voltages (1.5V < VSUPPLY < 3.5V), but the combined
current of the devices must not exceed 40 mA (8mA IMAX for each external
device). The status of the ODR bits is set using standard write accesses
from either port to address x0001with a “1” corresponding to “on“ and a
“0” corresponding to “off”. The status of the ODR bits can also be read
(without changing the status of the bits) via a standard read to address
x0001. When SFEN = VIL, the ODR is active and address x0001 is not
available for standard memory operations. When SFEN = VIH, the ODR
is inactive and address x0001 can be used as part of the main memory.
During reads and writes to the ODR I/O0 - I/O4 are valid bits and I/O5 I/O15 are "Don't Care". Refer to Figure 4 and Truth Table VII for Output
Drive Register operation.
The semaphore logic is a set of eight latches which are independent
of the Dual-Port SRAM. These latches can be used to pass a flag, or token,
from one port to the other to indicate that a shared resource is in use. The
semaphores provide a hardware assist for a use assignment method
called “Token Passing Allocation.” In this method, the state of a semaphore
latch is used as a token indicating that shared resource is in use. If the left
processor wants to use this resource, it requests the token by setting the
latch. This processor then verifies its success in setting the latch by reading
it. If it was successful, it proceeds to assume control over the shared
resource. If it was not successful in setting the latch, it determines that the
right side processor has set the latch first, has the token and is using the
shared resource. The left processor can then either repeatedly request
that semaphore’s status or remove its request for that semaphore to perform
another task and occasionally attempt again to gain control of the token via
the set and test sequence. Once the right side has relinquished the token,
the left side should succeed in gaining control.
The semaphore flags are active HIGH. A token is requested by writing
a zero into a semaphore latch and is released when the same side writes
a one to that latch.
The eight semaphore flags reside within the IDT70P258/248 in a
separate memory space from the Dual-Port SRAM. This address
space is accessed by placing a LOW input on the SEM pin (which acts as
a chip select for the semaphore flags) and using the other control pins
(Address, OE, and R/W) as they would be used in accessing a standard
Static RAM. Each of the flags has a unique address which can be accessed
by either side through address pins A0 – A2. When accessing the
semaphores, none of the other address pins has any effect.
When writing to a semaphore, only data pin D0 is used. If a LOW level
is written into an unused semaphore location, that flag will be set to a zero
on that side and a one on the other side (see Truth Table V). That
semaphore can now only be modified by the side showing the zero. When
a one is written into the same location from the same side, the flag will be
set to a one for both sides (unless a semaphore request from the other side
is pending) and then can be written to by both sides. The fact that the side
which is able to write a zero into a semaphore subsequently locks out writes
from the other side is what makes semaphore flags useful in interprocessor
communications. (A thorough discussion on the use of this feature follows
shortly.) A zero written into the same location from the other side will be
stored in the semaphore request latch for that side until the semaphore is
freed by the first side.
When a semaphore flag is read, its value is spread into all data bits so
that a flag that is a one reads as a one in all data bits and a flag containing
a zero reads as all zeros. The read value is latched into one side’s output
register when that side's semaphore select (SEM) and output enable (OE)
signals go active. This serves to disallow the semaphore from changing
state in the middle of a read cycle due to a write cycle from the other side.
Because of this latch, a repeated read of a semaphore in a test loop must
cause either signal (SEM or OE) to go inactive or the output will never
change.
A sequence WRITE/READ must be used by the semaphore in
order to guarantee that no system level contention will occur. A
processor requests access to shared resources by attempting to write
a zero into a semaphore location. If the semaphore is already in use,
the semaphore request latch will contain a zero, yet the semaphore
flag will appear as one, a fact which the processor will verify by the
Semaphores
The IDT70P258/248 is an extremely fast Dual-Port 8K/4K x 16 CMOS
Static RAM with an additional 8 address locations dedicated to binary
semaphore flags. These flags allow either processor on the left or right side
of the Dual-Port SRAM to claim a privilege over the other processor for
functions defined by the system designer’s software. As an example, the
semaphore can be used by one processor to inhibit the other from
accessing a portion of the Dual-Port SRAM or any other shared resource.
The Dual-Port SRAM features a fast access time, and both ports are
completely independent of each other. This means that the activity on the
left port in no way slows the access time of the right port. Both ports are
identical in function to standard CMOS Static RAM and can be accessed
to, at the same time with the only possible conflict arising from the
simultaneous writing of, or a simultaneous READ/WRITE of, a nonsemaphore location. Semaphores are protected against such ambiguous
situations and may be used by the system program to avoid any conflicts
in the non-semaphore portion of the Dual-Port SRAM. These devices
have an automatic power-down feature controlled by CE, the Dual-Port
SRAM enable, and SEM, the semaphore enable. The CE and SEM pins
control on-chip power down circuitry that permits the respective port to go
into standby mode when not selected. This is the condition which is shown
in Truth Table I where CE and SEM are LOW.
Systems which can best use the IDT70P258/248 contain multiple
processors or controllers and are typically very high-speed systems
which are software controlled or software intensive. These systems can
benefit from a performance increase offered by the IDT70P258/248's
hardware semaphores, which provide a lockout mechanism without
requiring complex programming.
Software handshaking between processors offers the maximum in
system flexibility by permitting shared resources to be allocated in
varying configurations. The IDT70P258/248 does not use its semaphore
flags to control any resources through hardware, thus allowing the
system designer total flexibility in system architecture.
An advantage of using semaphores rather than the more common
methods of hardware arbitration is that wait states are never incurred
in either processor. This can prove to be a major advantage in very
high-speed systems.
6.42
21
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
subsequent read (see Truth Table V). As an example, assume a
processor writes a zero to the left port at a free semaphore location. On
a subsequent read, the processor will verify that it has written successfully to that location and will assume control over the resource in question.
Meanwhile, if a processor on the right side attempts to write a zero to the
same semaphore flag it will fail, as will be verified by the fact that a one will
be read from that semaphore on the right side during subsequent read.
Had a sequence of READ/WRITE been used instead, system contention
problems could have occurred during the gap between the read and write
cycles.
It is important to note that a failed semaphore request must be followed
by either repeated reads or by writing a one into the same location. The
reason for this is easily understood by looking at the simple logic diagram
of the semaphore flag in Figure 4. Two semaphore request latches feed
into a semaphore flag. Whichever latch is first to present a zero to the
semaphore flag will force its side of the semaphore flag LOW and the other
side HIGH. This condition will continue until a one is written to the same
semaphore request latch. Should the other side’s semaphore request latch
have been written to a zero in the meantime, the semaphore flag will flip
over to the other side as soon as a one is written into the first side’s request
latch. The second side’s flag will now stay LOW until its semaphore request
latch is written to a one. From this it is easy to understand that, if a semaphore
is requested and the processor which requested it no longer needs the
resource, the entire system can hang up until a one is written into that
semaphore request latch.
The critical case of semaphore timing is when both sides request a
single token by attempting to write a zero into it at the same time. The
semaphore logic is specially designed to resolve this problem. If
simultaneous requests are made, the logic guarantees that only one
side receives the token. If one side is earlier than the other in making
the request, the first side to make the request will receive the token. If
both requests arrive at the same time, the assignment will be arbitrarily
made to one port or the other.
One caution that should be noted when using semaphores is that
semaphores alone do not guarantee that access to a resource is
secure. As with any powerful programming technique, if semaphores
are misused or misinterpreted, a software error can easily happen.
Initialization of the semaphores is not automatic and must be
handled via the initialization program at power-up. Since any semaphore request flag which contains a zero must be reset to a one, all
semaphores on both sides should have a one written into them at
initialization from both sides to assure that they will be free when
needed.
Using Semaphores—Some Examples
Perhaps the simplest application of semaphores is their application as
resource markers for the IDT70P258/248’s Dual-Port SRAM. Say the 8K/
4K x 16 SRAM was to be divided into two 4K/2K x 16 blocks which were
to be dedicated at any one time to servicing either the left or right port.
Semaphore 0 could be used to indicate the side which would control the
lower section of memory, and Semaphore 1 could be defined as the
indicator for the upper section of memory.
To take a resource, in this example the lower 4K/2K of Dual-Port
SRAM, the processor on the left port could write and then read a
zero in to Semaphore 0. If this task were successfully completed
(a zero was read back rather than a one), the left processor would
L PORT
R PORT
SEMAPHORE
REQUEST FLIP FLOP
D0
WRITE
D
SEMAPHORE
READ
Q
SEMAPHORE
REQUEST FLIP FLOP
Q
D
D0
WRITE
SEMAPHORE
READ
5675 drw 19
Figure 4. IDT70P258/248 Semaphore Logic
assume control of the lower 4K/2K. Meanwhile the right processor was
attempting to gain control of the resource after the left processor, it would
read back a one in response to the zero it had attempted to write into
Semaphore 0. At this point, the software could choose to try and gain control
of the second 4K/2K section by writing, then reading a zero into Semaphore
1. If it succeeded in gaining control, it would lock out the left side.
Once the left side was finished with its task, it would write a one to
Semaphore 0 and may then try to gain access to Semaphore 1. If
Semaphore 1 was still occupied by the right side, the left side could undo
its semaphore request and perform other tasks until it was able to write, then
read a zero into Semaphore 1. If the right processor performs a similar task
with Semaphore 0, this protocol would allow the two processors to swap
4K/2K blocks of Dual-Port SRAM with each other.
The blocks do not have to be any particular size and can even be
variable, depending upon the complexity of the software using the
semaphore flags. All eight semaphores could be used to divide the
Dual-Port SRAM or other shared resources into eight parts. Semaphores can even be assigned different meanings on different sides
rather than being given a common meaning as was shown in the
example above.
Semaphores are a useful form of arbitration in systems like disk
interfaces where the CPU must be locked out of a section of memory
during a transfer and the I/O device cannot tolerate any wait states.
With the use of semaphores, once the two devices has determined
which memory area was “off-limits” to the CPU, both the CPU and the
I/O devices could access their assigned portions of memory continuously without any wait states.
Semaphores are also useful in applications where no memory
“WAIT” state is available on one or both sides. Once a semaphore
handshake has been performed, both processors can access their
assigned SRAM segments at full speed.
Another application is in the area of complex data structures. In this
case, block arbitration is very important. For this application one
processor may be responsible for building and updating a data
structure. The other processor then reads and interprets that data
structure. If the interpreting processor reads an incomplete data
structure, a major error condition may exist. Therefore, some sort of
arbitration must be used between the two different processors. The
building processor arbitrates for the block, locks it and then is able to
go in and update the data structure. When the update is completed, the
data structure block is released. This allows the interpreting processor
to come back and read the complete data structure, thereby guaranteeing a consistent data structure.
6.42
22
,
IDT70P258/248L
Low Power 1.8V 8K/4K x 16 Dual-Port Static RAM
Industrial Temperature Range
Ordering Information
IDT XXXXX
Device
Type
A
999
A
A
Power
Speed
Package
Process/
Temperature
Range
I
Industrial (-40°C to +85°C)
BY
100 Ball 0.5mm-pitch BGA(BY100)
55
Industrial Only Speed in nanoseconds
L
Low Power
70P258
70P248
128K (8K x 16) 1.8V Dual-Port SRAM
64K (4K x 16) 1.8V Dual-Port SRAM
5675 drw 20
Datasheet Document History
09/11/03:
01/22/04:
03/22/04:
04/21/04:
Initial Datasheet
Page 6 Amended Parameter and Test Conditions in DC Electrical Characteristics table
Page 1 Added 2.5V to the feature supporting the I/O's
Page 5 Added Recommended DC Operating Conditions (VDDQL = 2.5V + 100mV) Table 06_5
Page 6 Added VOHL & VOLL for 2.5V to the DC Electrical Characteristics Over the Operating Temperature and
Supply Voltage Range (VDDQL = 1.8V + 100mV) Table 08
Removed Preliminary status from entire datasheet
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6.42
23
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