FMR09N90E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (4.0±0.5V) High avalanche durability Equivalent circuit schematic TO-3PF Drain(D) Applications Gate(G) Source(S) Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum Ratings and Characteristics Absolute Maximum Ratings at Tc=25°C (unless otherwise specified) Description Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt Maximum Power Dissipation PD Operating and Storage Temperature range Tch Tstg Drain-Source Voltage Characteristics 900 900 ±9 ±36 ±30 9 565.3 10.0 2.1 100 3.13 100 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs Remarks VGS = -30V Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C W °C °C Electrical Characteristics at Tc=25°C (unless otherwise specified) Description Drain-Source Breakdown Voltage Gate Threshold Voltage Symbol BVDSS VGS (th) Zero Gate Voltage Drain Current I DSS Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance I GSS R DS (on) gfs Ciss Coss Crss td(on) tr td(off) tf QG Q GS Q GD Q SW I AV VSD trr Qrr Turn-On Time Turn-Off Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Drain Crossover Charge Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Conditions I D =250µA, VGS =0V I D =250µA, VDS =VGS VDS =900V, VGS =0V VDS =720V, VGS =0V VGS =±30V, VDS =0V I D =4.5A, VGS =10V I D =4.5A, VDS =25V Tch =25°C Tch =125°C VDS =25V VGS =0V f=1MHz Vcc =600V VGS =10V I D =4.5A RG =24Ω Vcc =450V I D =9A VGS =10V L=5.12mH, Tch =25°C I F =9A, VGS =0V, Tch =25°C I F =9A, VGS =0V -di/dt=100A/µs, Tch=25°C min. 900 3.5 5.0 9 - typ. 4.0 10 1.16 10 1700 150 11 35 30 110 30 50 15 16 6 0.90 1.8 15 max. 4.5 25 250 100 1.4 2550 225 17 53 45 165 45 75 23 24 9 1.35 - Unit V V min. typ. max. 1.250 40.0 Unit °C/W °C/W µA nA Ω S pF ns nC A V µS µC Thermal Characteristics Description Thermal resistance Symbol Rth (ch-c) Rth (ch-a) Note *1 : Tch≤150°C Note *2 : Stating Tch=25°C, IAS =3.6A, L=80.0mH, Vcc=90V, RG =10Ω E AS limited by maximum channel temperature and avalanche current. See to 'Avalanche current' graph. Test Conditions Channel to case Channel to ambient Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature. See to the 'Transient Themal impeadance' graph. Note *4 : I F ≤-I D, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C. Note *5 : I F ≤-I D, dv/dt=2.1kV/µs, Vcc≤BVDSS, Tch≤150°C. 1 FMR09N90E 120 FUJI POWER MOSFET Allowable Power Dissipation PD=f(Tc) Safe Operating Area ID=f(VDS):Duty=0(Single pulse),Tc=25 °c 2 10 t= 1μs 100 1 10μs 10 100μs 60 0 ID [A] PD [W] 80 10 1ms 40 Power loss waveform : Square waveform -1 10 20 PD t 0 -2 0 25 50 75 100 125 10 150 -1 15 0 10 Tc [°C] Typical Output Characteristics ID=f(VDS):80 μs pulse test,Tch=25°C 100 1 10 2 10 VDS [V] 3 10 10 Typical Transfer Characteristic ID=f(VGS):80 μs pulse test,VDS=25V,Tch=25°C 10V 7.0V 6.5V 10 ID[A] 10 ID [A] 6.0V 1 5 VGS=5.5V 0.1 0 0 100 4 8 12 VDS [V] 16 20 0 24 Typical Transconductance gfs=f(ID):80 μs pulse test,VDS=25V,Tch=25°C 2.0 1 2 3 4 5 VGS[V] 6 VGS=5.5V 6.5V 7V 10V 20V RDS(on) [ Ω ] 1.4 1.2 1 1.0 0.8 0.1 0.1 1 ID [A] 10 0 100 2 9 6V 1.6 gfs [S] 8 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 μs pulse test,Tch=25°C 1.8 10 7 4 8 ID [A] 12 10 FMR09N90E 5.0 FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=4.5A,VGS=10V 8 4.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250μA 7 4.0 6 VGS(th) [V] 3.5 RDS(on) [ Ω ] 3.0 2.5 2.0 typ. 4 min. 2 typ. 1.0 max. 3 max. 1.5 5 0.5 1 0.0 -50 -25 0 25 50 Tch [°C] 75 100 125 0 150 -50 Typical Gate Charge Characteristics VGS=f(Qg):ID=9A,Tch=25°C 4 14 -25 0 25 50 75 Tch [°C] 100 125 150 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 Vcc= 120V 450V 720V 12 Ciss 3 10 10 C [pF] VGS [V] 8 6 2 10 Coss 4 1 10 2 Crss 0 0 0 20 40 60 80 10 100 -2 -1 10 10 0 10 Qg [nC] 100 1 2 10 10 VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 μs pulse test,Tch=25°C Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=24Ω 3 10 tf 10 td(off) 2 1 td(on) t [ns] IF [A] 10 tr 1 10 0.1 0.01 0.00 0 10 0.25 0.50 0.75 VSD [V] 1.00 1.25 -1 1.50 10 3 0 10 1 ID [A] 10 2 10 FMR09N90E 600 FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):D=0 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=90V,I(AV)<=9A 101 IAS=3.6A 500 EAV [mJ] 400 Zt h(ch- c) [ °C / W ] 100 IAS=5.4A 300 10-1 10-2 IAS=9.0A 200 10-3 10-6 100 10-5 10-4 10-3 t [sec] 0 0 25 50 75 100 125 150 starting Tch [°C] 4 10-2 10-1 100 FMR09N90E FUJI POWER MOSFET WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. 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