ON NSR0240HT1G Schottky barrier diode Datasheet

NSR0240HT1G
Schottky Barrier Diode
Schottky barrier diodes are optimized for very low forward voltage
drop and low leakage current and are used in a wide range of dc−dc
converter, clamping and protection applications in portable devices.
NSR0240H in a SOD−323 miniature package enables designers to
meet the challenging task of achieving higher efficiency and meeting
reduced space requirements.
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Features
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40 VOLT SCHOTTKY
BARRIER DIODE
Very Low Forward Voltage Drop −480 mV @ 100 mA
Low Reverse Current − 0.2 mA @ 25 V VR
250 mA of Continuous Forward Current
Power Dissipation of 160 mW with Minimum Trace
Very High Switching Speed
Low Capacitance − CT = 4 pF
This is a Pb−Free Device
1
CATHODE
2
ANODE
Typical Applications
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•
•
•
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LCD and Keypad Backlighting
Camera Photo Flash
Buck and Boost dc−dc Converters
Reverse Voltage and Current Protection
Clamping & Protection
1
Mobile Handsets
MP3 Players
Digital Camera and Camcorders
Notebook PCs and PDAs
GPS
AC = Specific Device Code
M = Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
VR
40
Vdc
Forward Continuous Current (DC)
IF
250
mA
IFSM
1.0
A
Non−Repetitive Peak Forward Surge
Current
ESD Rating: Human Body Model
Machine Model
AC MG
G
SOD−323
CASE 477
STYLE 1
Markets
•
•
•
•
•
MARKING
DIAGRAM
2
ESD
Class 1B
Class A
Device
Package
Shipping†
NSR0240HT1G
SOD−323*
(Pb−Free)
3000/Tape & Reel
*This package is inherently Pb−Free.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2008
September, 2008 − Rev. 0
1
Publication Order Number:
NSR0240H/D
NSR0240HT1G
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
RqJA
PD
740
160
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ TA = 25°C
RqJA
PD
460
270
°C/W
mW
TJ, Tstg
−55 to +150
°C
Junction and Storage Temperature Range
1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Leakage
(VR = 10 V)
(VR = 25 V)
(VR = 40 V)
IR
Forward Voltage
(IF = 10 mA)
(IF = 100 mA)
(IF = 200 mA)
VF
Total Capacitance
(VR = 5.0 V, f = 1 MHz)
CT
Reverse Recovery Time
(IF = IR = 10 mA, IR = 1.0 mA)
trr
Min
Typ
Max
0.2
0.6
0.55
2.0
10
345
480
585
450
550
710
4.0
3.0
DC Current
− Source +
750 mH
50 W Output
Pulse
Generator
0.1 mF
0V
IF
tr
tp
10%
90%
VR
Pulse Generator
Output
0.1 mF
IF
DUT
Adjust for IRM
trr
RL = 50 W
IRM
Current
Transformer
50 W Input
Oscilloscope
1.
2.
3.
4.
5.
iR(REC) = 1 mA
Output Pulse
(IF = IRM = 10 mA; measured
at iR(REC) = 1 mA)
DC Current Source is adjusted for a Forward Current (IF) of 10 mA.
Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA.
Pulse Generator transition time << trr.
IR(REC) is measured at 1 mA. Typically 0.1 X IRM or 0.25 X IRM.
tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
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2
Unit
mA
mV
pF
ns
NSR0240HT1G
1000
Ir, REVERSE CURRENT (mA)
100
125°C
10
150°C
1
0.1
0.01
0.001
85°C
0
25°C
0.1
−40°C
0.3
0.2
0.4
0.5
150°C
100 125°C
1
25°C
0.1
0.01
0.001
0.0001 −40°C
0.00001
0.6
85°C
10
0
5
10
15
20
25
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 2. Forward Voltage
Figure 3. Leakage Current
14
CT, TOTAL CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1000
12
TA = 25°C
10
8
6
4
2
0
0
5
10
15
20
25
30
35
VR, REVERSE VOLTAGE (V)
Figure 4. Total Capacitance
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3
40
45
30
35
NSR0240HT1G
PACKAGE DIMENSIONS
SOD−323
CASE 477−02
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF
RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
STYLE 1:
PIN 1. CATHODE
2. ANODE
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSR0240H/D
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