Mitsubishi FM600TU-2A Mosfet module high power switching use insulated package Datasheet

MITSUBISHI <MOSFET MODULE>
FM600TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
FM600TU-2A
● ID(rms) .......................................................... 300A
● VDSS ............................................................. 100V
● Insulated
Type
● 6-elements in a pack
● NTC Thermistor inside
● UL Recognized
Yellow Card No.E80276
File No.E80271
APPLICATION
AC motor control of forklift (battery power source), UPS
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
110
97 ±0.25
70.9
32
6.5
16
16
36
36
10
35 ±1.0
10
30
6.5
V
20
(SCREWING DEPTH)
32
4
25
B
P
Tc measured point
Housing Type of A and B
(Tyco Electronics P/N:)
A: 917353-1
B: 179838-1
(9)GWP
(3)SWP
V
W
(10)GUN
(11)GVN
(12)GWN
(4)SUN
N
(5)SVN
(6)SWN
(13)
NTC
U
90
14
20
32
CIRCUIT DIAGRAM
(8)GVP
(2)SVP
80
14
A
(7)GUP
(1)SUP
75
W
14
20
16.5
4
22.57
U
14
7-M6NUTS
3.96
9.2
5-6.5
38
6
(6)
12
3
(8.7)
67 ±0.25
9.1
13
1
14
4-φ6.5
MOUNTING HOLES
11.5
(6)
P
(15.8)
3 6.5
7
(14.5)
(14.5)
(6)
7
N
(17.5)
7
22.75
26 +1.0
−0.5
30
L A B E L
15.2
16.5
(14)
(1)SUP
(2)SVP
(3)SWP
(7)GUP
(8)GVP
(9)GWP (10)GUN (11)GVN (12)GWN
(13)TH1 (14)TH2
(4)SUN
(5)SVN
(6)SWN
A
B
Feb. 2009
MITSUBISHI <MOSFET MODULE>
FM600TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tch = 25°C unless otherwise specified.)
Symbol
VDSS
VGSS
ID(rms)
IDM
IDA
IS(rms)*1
ISM*1
PD*4
PD*4
Tch
Tstg
Viso
Item
Drain-source voltage
Gate-source voltage
Drain current
Avalanche current
Source current
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
—
Mounting torque
—
Weight
Ratings
100
±20
300
600
300
300
600
960
1300
–40 ~ +150
–40 ~ +125
2500
3.5 ~ 4.5
3.5 ~ 4.5
600
Conditions
G-S Short
D-S Short
TC’ = 133°C*3
Pulse*2
L = 10µH Pulse*2
Pulse*2
TC = 25°C
TC’ = 25°C*3
Terminals to base plate, f = 60Hz, AC 1 minute
Main terminals M6 screw
Mounting M6 screw
Typical value
Unit
V
V
Arms
A
A
Arms
A
W
W
°C
°C
Vrms
N•m
N•m
g
ELECTRICAL CHARACTERISTICS (Tch = 25°C unless otherwise specified.)
Symbol
Item
IDSS
VGS(th)
IGSS
rDS(ON)
(chip)
VDS(ON)
(chip)
Drain cutoff current
Gate-source threshold voltage
Gate leakage current
Static drain-source
On-state resistance
Static drain-source
On-state voltage
R(lead)
Lead resistance
Ciss
Coss
Crss
QG
td(on)
tr
td(off)
tf
trr*1
Qrr*1
VSD*1
Rth(ch-c)
Rth(ch-c’)
Rth(c-f)
Rth(c’-f’)
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Reverse recovery time
Reverse recovery charge
Source-drain voltage
Thermal resistance
Contact thermal resistance
Conditions
VDS = VDSS, VGS = 0V
ID = 30mA, VDS = 10V
VGS = VGSS, VDS = 0V
ID = 300A
VGS = 15V
ID = 300A
VGS = 15V
ID = 300A
terminal-chip
Tch = 25°C
Tch = 125°C
Tch = 25°C
Tch = 125°C
Tch = 25°C
Tch = 125°C
VDS = 10V
VGS = 0V
VDD = 48V, ID = 300A, VGS = 15V
VDD = 48V, ID = 300A, VGS ± 15V
RG = 4.2Ω, Inductive load
IS = 300A
IS = 300A, VGS = 0V
MOSFET part (1/6 module)*7
MOSFET part (1/6 module)*3
Case to fin, Thermal grease Applied*8 (1/6 module)
Case to fin, Thermal grease Applied*3, *8 (1/6 module)
Min.
—
4.7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
6
—
0.8
1.37
0.24
0.41
0.7
1.0
—
—
—
1800
—
—
—
—
—
6.2
—
—
—
0.1
0.09
Max.
1
7.3
1.5
1.1
—
0.33
—
—
—
110
15
10
—
400
600
600
400
250
—
1.3
0.13
0.096
—
—
Min.
—
—
Limits
Typ.
100
4000
Max.
—
—
Unit
mA
V
µA
mΩ
V
mΩ
nF
nC
ns
ns
µC
V
K/W
NTC THERMISTOR PART
Symbol
RTh*6
B*6
Parameter
Resistance
B Constant
Conditions
TTh = 25°C*5
Resistance at TTh = 25°C, 50°C*5
Unit
kΩ
K
*1: It is characteristics of the anti-parallel, source-drain free-wheel diode (FWDi).
*2: Pulse width and repetition rate should be such that the device channel temperature (Tch) does not exceed Tch max rating.
*3: Case Temperature (Tc’) measured point is just under the chips. If use this value, Rth(f-a) should be measured just under the chips.
*4: Pulse width and repetition rate should be such as to cause negligible temperature rise.
*5: TTh is thermistor temperature.
25
1
1
*6: B = In( R
)/(
)
R50 T25
T50
R25: resistance at absolute temperature T25 [K]: T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]: T50 = 50 [°C]+273.15 = 323.15 [K]
*7: Case Temperature (Tc) measured point is shown in page OUTLINE DRAWING.
*8: Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)].
Feb. 2009
2
MITSUBISHI <MOSFET MODULE>
FM600TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
PERFORMANCE CURVES
TRANSFER CHARACTERISTICS
(TYPICAL)
Chip
OUTPUT CHARACTERISTICS
(TYPICAL)
Chip
500
DRAIN CURRENT ID (A)
600
VGS = 20V
VDS = 10V
12V
500
15V
DRAIN CURRENT ID (A)
600
10V
400
9V
300
200
100
Tch = 25°C
Tch = 125°C
400
300
200
100
Tch = 25°C
0
0
0.2
0.4
0.6
0.8
0
1.0
5
GATE THRESHOLD VOLTAGE VGS(th) (V)
DRAIN-SOURCE
ON-STATE RESISTANCE rDS(ON) (mΩ)
1.8
ID = 300A
1.6
VGS = 12V
VGS = 15V
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80 100 120 140 160
6
5
Tch = 25°C
3
2
1
0
0
20
40
1.2
0.8
ID = 600A
ID = 300A
3
2
101
7
5
Coss
3
2
VGS = 0V
ID = 150A
8
12
16
80 100 120 140 160
Ciss
1.6
4
60
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
7
5
CAPACITANCE (nF)
DRAIN-SOURCE
ON-STATE VOLTAGE VDS(ON) (V)
VDS = 10V
ID = 30mA
4
102
2.0
0
15
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. GATE BIAS
(TYPICAL)
Chip
0
13
7
CHANNEL TEMPERATURE Tch (°C)
0.4
11
GATE THRESHOLD
VOLTAGE VS. TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE
VOLTAGE VS. TEMPERATURE
(TYPICAL)
Chip
1.2
9
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
1.4
7
Crss
100 –1
10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb. 2009
3
MITSUBISHI <MOSFET MODULE>
FM600TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
GATE CHARGE CHARACTERISTICS
(TYPICAL)
103
ID = 300A
SOURCE CURRENT IS (A)
GATE-SOURCE VOLTAGE VGS (V)
20
16
VDD = 24V
12
VDD = 48V
8
4
0
0
103
500
1000
1500
2000
102
7
5
3
2
0.6
0.7
0.8
0.9
1.0
104
7
5
SWITCHING TIME (ns)
td(off)
td(on)
tr
tf
Conditions:
VDD = 48V
VGS = ±15V
RG = 4.2Ω
Tch = 125°C
Inductive load
2
SWITCHING LOSS (mJ/pulse)
Tch = 25°C
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
3
2
3
5 7 102
2
3
2
tr
103 td(off)
7
5
tf
td(on)
3
2
Conditions:
VDD = 48V
VGS = ±15V
ID = 300A
Tch = 125°C
Inductive load
102
7
5
3
2
101
5 7 103
3
0
5
10 15 20 25 30 35 40 45
DRAIN CURRENT ID (A)
GATE RESISTANCE RG (Ω)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
7
5
Esw(off)
3
2
Esw(on)
102
100
7
5
3
2
Err
Conditions:
VDD = 48V
VGS = ±15V
RG = 4.2Ω
Tch = 125°C
Inductive load
10–1
7
5
3
2
10–2 1
10
Tch = 125°C
2
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
7
5
101
3
SOURCE-DRAIN VOLTAGE VSD (V)
102
101 1
10
VGS = 0V
GATE CHARGE QG (nC)
SWITCHING LOSS (mJ/pulse)
SWITCHING TIME (ns)
2
7
5
101
0.5
2500
7
5
3
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
Chip
(TYPICAL)
2
3
5 7 102
2
3
7
5
3
2
101 Esw(off)
7
5
3
2
100 Esw(on)
7
5
Err
3
2
10–1
7
5
3
2
10–2
5 7 103
DRAIN CURRENT ID (A)
Conditions:
VDD = 48V
VGS = ±15V
ID = 300A
Tch = 125°C
Inductive load
0
5
10 15 20 25 30 35 40 45
GATE RESISTANCE RG (Ω)
Feb. 2009
4
MITSUBISHI <MOSFET MODULE>
FM600TU-2A
HIGH POWER SWITCHING USE
INSULATED PACKAGE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101
100
3
2
trr
Irr (A), trr (ns)
102
Irr
7
5
3
2
Conditions:
VDD = 48V
VGS = ±15V
RG = 4.2Ω
Tch = 25°C
Inductive load
101
7
5
3
2
100 1
10
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(ch-c)
7
5
2
3
5 7 102
2
3
7
5
3
2
10–1
10–1
7
5
7
5
3
2
3
2
10–2
10–2
7
5
3 Single pulse
2 Tch = 25°C
Per unit base = Rth(ch-c) = 0.13K/W
10–3
10–5 2 3 5 710–4 2 3 5 7 10–3
10–3
5 7 103
7
5
3
2
TIME (s)
SOURCE CURRENT IS (A)
CHIP LAYOUT
(110)
(97)
47.2
P
1
TrUP
13
TrVP
TrWP
TrUN
Th
12
TrVN
(90)
(80)
14
(67)
49.2
51.8
29.2
N
7
TrWN
LABEL SIDE
6
U
V
W
24.8
57.8
90.8
Feb. 2009
5
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