FUJITSU SEMICONDUCTOR DATA SHEET DS04-27200-6E ASSP For Power Management Applications BIPOLAR Switching Regulator Controller (Switchable between push-pull and single-end functions) MB3759 ■ DESCRIPTION The MB3759 is a control IC for constant-frequency pulse width modulated switching regulators. The IC contains most of the functions required for switching regulator control circuits. This reduces both the component count and assembly work. ■ FEATURES • • • • • • • Drives a 200 mA load Can be set to push-pull or single-end operation Prevents double pulses Adjustable dead-time Error amplifier has wide common phase input range Built in a circuit to prevent misoperation due to low power supply voltage. Built in an internal 5 V reference voltage with superior voltage reduction characteristics ■ PACKAGES 16-pin plastic DIP (DIP-16P-M04) 16-pin ceramic DIP (DIP-16C-C01) 16-pin plastic SOP (FPT-16P-M06) MB3759 ■ PIN ASSIGNMENT (TOP VIEW) +IN1 1 16 +IN2 −IN1 2 15 −IN2 FB 3 14 VREF DT 4 13 OC CT 5 12 VCC RT 6 11 C2 GND 7 10 E2 C1 8 9 E1 (DIP-16P-M04) (DIP-16C-C01) (FPT-16P-M06) ■ BLOCK DIAGRAM Output control OC 13 RT 6 CT 5 Dead time control DT Q 8 C1 9 E1 = 0.2 V 11 C2 10 E2 Error amp.1 −IN1 2 2 T 4 +IN1 1 Feed back Q OSC + A1 − +IN2 16 + −IN2 15 − FB 3 A2 Error amp.2 PMW comparator Reference regurator 12 VCC 14 VREF 7 GND MB3759 ■ ABSOLUTE MAXIMUM RATINGS Unit Rating Parameter Symbol Condition Min Max Power supply voltage VCC — — 41 V Collector output voltage VCE — — 41 V Collector output current ICE — — 250 mA Amplifier input voltage VI — — VCC + 0.3 V Ta ≤ +25 °C — 1000 Ta ≤ +60 °C — 800 Ta ≤ +25 °C — 620 Plastic DIP Power dissipation Ceramic DIP PD SOP * mW Operating temperature Top — −30 +85 °C Storage temperature Tstg — −55 +125 °C *: When mounted on a 4 cm square double-sided epoxy circuit board (1.5 mm thickness) The ceramic circuit board is 3 cm x 4 cm (0.5 mm thickness) WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings. ■ RECOMMENDED OPERATING CONDITIONS Parameter Symbol Value Min Typ Max Unit Power supply voltage VCC 7 15 32 V Collector output voltage VCE — — 40 V Collector output current ICE 5 — 200 mA Amplifier input voltage VIN −0.3 0 to VR VCC − 2 V FB sink current ISINK — — 0.3 mA ISOURCE — — 2 mA Reference section output current IREF — 5 10 mA Timing resistor RT 1.8 30 500 kΩ 6 FB source current Timing capacitor CT 470 1000 10 pF Oscillator frequency fosc 1 40 300 kHz Operating temperature Top −30 +25 +85 °C Note: Values are for standard derating conditions. Give consideration to the ambient temperature and power consumption if using a high supply voltage. WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand. 3 MB3759 ■ ELECTRICAL CHARACTERISTICS (VCC = 15 V, Ta = +25 °C) Parameter Reference section Oscillator section Symbol IO = 1 mA Value Unit Min Typ Max 4.75 5.0 5.25 V Output voltage VREF Input regulation ∆VR(IN) 7 V ≤ VCC ≤ 40 V, Ta = +25 °C — 2 25 mV Load regulation ∆VR(LD) 1 mA ≤ IO ≤ 10 mA, Ta = +25 °C — −1 −15 mV Temperature stability ∆VR/∆T −20 °C ≤ Ta ≤ + 85 °C — ±200 ±750 µV/°C Short circuit output current ISC — 15 40 — mA Reference lockout voltage — — — 4.3 — V Reference hysteresis voltage — — — 0.3 — V Oscillator frequency fosc RT = 30 kΩ, CT = 1000 pF 36 40 44 kHz Standard deviation of frequency — RT = 30 kΩ, CT = 1000 pF — ±3 — % Frequency change with voltage — 7 V ≤ VCC ≤ 40 V, Ta = +25 °C — ±0.1 — % ∆fosc/∆T −20 °C ≤ Ta ≤ +85 °C — ±0.01 ±0.03 %/°C Input bias current ID 0 ≤ VI ≤ 5.25 V — −2 −10 µA Maximum duty cycle (Each output) — VI = 0 40 45 — % Frequency change with temperature Dead-time control section Condition Input threshold voltage 0% duty cycle VDO — — 3.0 3.3 V Max. duty cycle VDM — 0 — — V (Continued) 4 MB3759 (Continued) (VCC = 15 V, Ta = +25 °C) Parameter Error amplifier section Symbol Value Min Typ Max Unit Input offset voltage VIO VO (pin3) = 2.5 V — ±2 ±10 mV Input offset current IIO VO (pin3) = 2.5 V — ±25 ±250 nA Input bias current II VO (pin3) = 2.5 V — −0.2 −1.0 µA −0.3 — VCC − 2 V Common-mode input voltage VCM 7 V ≤ VCC ≤ 40 V Open-loop voltage amplification AV 0.5 V ≤ VO ≤ 3.5 V 70 95 — dB Unity-gain bandwidth BW AV = 1 — 800 — kHz VCC = 40 V 65 80 — dB ISINK -5 V ≤ VID ≤ -15 mV, VO = 0.7 V 0.3 0.7 — mA ISOURCE 15 mV ≤ VID ≤ 5V, VO = 3.5 V −2 −10 — mA Common-mode rejection ratio Output sink ISINK current (pin 3) ISOURCE Output section Condition CMR Collector leakage current ICO VCE = 40 V, VCC = 40 V — — 100 µA Emitter leakage current IEO VCC = VC = 40 V, VE = 0 — — −100 µA Collector emitter saturation voltage Emitter grounded VSAT(C) VE = 0, IC = 200 mA — 1.1 1.3 V Emitter follower VSAT(E) VC = 15 V, IE = −200 mA — 1.5 2.5 V Output control input current IOPC VI = VREF — 1.3 3.5 mA Input threshold voltage VTH 0% Duty — 4 4.5 V Input sink current (pin 3) ISINK VO (pin3) = 0.7 V 0.3 0.7 — mA Power supply current ICC V(pin4) = 2 V, See Fig-2 — 8 — mA Standby current ICCQ V(pin6) = VREF, I/O open — 7 12 mA PWM comparator section Rise time Switching characteristics Fall time Rise time Fall time Emitter grounded tR RL = 68 Ω — 100 200 ns tF RL = 68 Ω — 25 100 ns Emitter follower tR RL = 68 Ω — 100 200 ns tF RL = 68 Ω — 40 100 ns 5 MB3759 ■ TEST CIRCUIT VCC = 15V 150 Ω /2 W 150 Ω /2 W VD TEST INPUT DT VC 30 kΩ 1000 pF VCC C1 FB E1 RT C2 OUTPUT 1 OUTPUT 2 CT E2 −IN1 +IN1 −IN2 +IN2 VREF OC GND 50 kΩ ■ OPERATING TIMING = 3.0 V Voltage at CT VC VD =0 V OUTPUT 1 ON ON ON ON OUTPUT 2 ON 6 ON ON MB3759 ■ OSCILLATION FREQUENCY f OSC = 1.2 RT · C T RT : kΩ CT : µF fosc : kHZ ■ OUTPUT LOGIC TABLE Input (Output Control) Output State GND Single-ended or parallel output VREF Push-pull 7 MB3759 ■ TYPICAL CHARACTERISTICS Reference voltage vs. power supply voltage Reference voltages. temperature 10 5 VREF 4 5 ∆VREF 3 0 2 −5 1 0 0 10 20 30 40 Reference voltage change ∆VREF (mV) IO = 1 mA Reference voltage change ∆VREF (mV) Reference voltage VREF (V) 6 VCC = 15 V IO = 1 mA 0 −10 −20 −30 −25 0 25 50 75 100 Temperature Ta (°C) Power supply voltage VCC (V) Duty ratio vs. dead time control voltage Oscillator vs. RT, CT 1M VCC =15 V 200 k 100 k CT = 470 pF 50 k 1000 pF 20 k 10 k 0.01µF 5k 0.1µF Duty radio TON / T (%) Oscillator frequency fOSC (HZ) 500 k 0 VCC = 15 V Ta = 0°C CT = 1000 pF RT = 30 kΩ Ta = +25°C 10 Ta = +70°C 20 30 40 2k 50 1k 2k 5 k 10 k 20 k 100 k 200 k 500 k RT (Ω) 0 1 2 3 Dead time control voltage VD (V) (Continued) 8 MB3759 Open loop voltage amplification vs. frequency 80 0.8 Low - level output voltage VOL (V) Open loop voltage amplification AV (dB) VCC = 15 V ∆VO = 3 V 90 70 60 50 40 30 20 10 0 10 5 Ta = 0°C Ta = +70˚C 0.6 Ta = +70°C 0.4 3 Ta = 0°C Ta = +25°C VOL 0.2 1k 10 k 100 k 2 1 0 0 1M 0.5 5 Ta = 0°C 0.8 Ta = +70°C 0.6 0.4 50 100 150 Collector output current IC (mA) 200 Emitter saturation voltage VSAT (E) (V) VCC = 15 V Ta = +25°C 1.5 15 IOL IOH Emitter saturation voltage vs. emitter output current 1.2 1.0 1.0 10 Output current IOL, IOH (mA) Collector saturation voltage vs. collector output current Collector saturation voltage VSAT ( C ) (V) 4 VOH Frequency f (Hz) 0 VCC = 15 V Ta = +25°C 0 100 High - level output voltage VOH (V) Output voltage vs. output current (feed back terminal) 100 1.8 VCC = 15 V Ta = 0°C 1.6 Ta = +25°C 1.4 Ta = +70°C 1.2 1.0 0 50 100 150 200 Emitter output current IE (mA) (Continued) 9 MB3759 Output voltage vs. reference voltage Power supply current vs. power supply voltage 6 10 Power supply current ICC ,ICCQ (mA) Output voltage VOUT (V) (Continued) 5 5V 4 400 Ω 3 VOUT 8 2 1 0 0 1 2 3 4 5 ICC 7.5 ICCQ 5 2.5 0 6 0 Reference voltage VREF (V) Power dissipation PD (mW) (200, 10) 800 (100, 10) (200, 5) (100, 5) 600 (100, 0) 400 (0, 0) 200 40 1000 ceramic DIP 800 plastic DIP 600 SOP 400 200 0 0 0 10 20 30 40 Power supply voltage VCC (V) 10 30 Power dissipation vs. ambient temperature Power dissipation PD (mW) (IO, IR) (mA) Ta = +25°C 20 Power supply voltage VCC (V) Power dissipation vs. power supply voltage 1000 10 0 20 40 60 80 Temperature Ta (°C) 100 MB3759 ■ BASIC OPERATION Switching regulators can achieve a high level of efficiency. This section describes the basic principles of operation using a chopper regulator as an example. As shown in the diagram, diode D provides a current path for the current through inductance L when Q is off. Transistor Q performs switching and is operated at a frequency that provides a stable output. As the switching element is saturated when Q is on and cutoff when Q is off, the losses in the switching element are much less than for a series regulator in which the pass transistor is always in the active state. While Q is conducting, the input voltage VIN is supplied to the LC circuit and when Q is off, the energy stored in L is supplied to the load via diode D. The LC circuit smooths the input to supply the output voltage. The output voltage VO is given by the following equation. VO = Ton Ton VIN = VIN Ton + Toff T Q : ON L Q VIN D Q : OFF C VO RL Q: Switching element D: Flywheel diode As indicated by the equation, variation in the input voltage is compensated for by controlling the duty cycle (Ton/ T). If VIN drops, the control circuit operates to increase the duty cycle so as to keep the output voltage constant. The current through L flows from the input to the output when Q is on and through D when Q is off. Accordingly, the average input current IIN is the product of the output current and the duty cycle for Q. IIN = Ton IO T The theoretical conversion efficiency if the switching loss in Q and loss in D are ignored is as follows. PO × 100 (%) PIN VO · IO = × 100 VIN · IIN VIN · IO · Ton / T = × 100 VIN · IO · Ton / T = 100 (%) η= The theoretical conversion efficiency is 100%. In practice, losses occur in the switching element and elsewhere, and design decisions to minimize these losses include making the switching frequency as low as practical and setting an optimum ratio of input to output voltage. 11 MB3759 ■ SWITCHING ELEMENT 1. Selection of the Switching Transistor It can be said that the success or otherwise of a switching regulator is determined by the choice of switching transistor. Typically, the following parameters are considered in selecting a transistor. • Withstand voltage • Current • Power • Speed For the withstand voltage, current, and power, it is necessary to determine that the area of safe operation (ASO) of the intended transistor covers the intended range for these parameters. The speed (switching speed: rise time tr, storage time tstg, and fall time tf) is related to the efficiency and also influences the power. The figures show the transistor load curve and VCE - IC waveforms for chopper and inverter-type regulators. The chopper regulator is a relatively easy circuit to deal with as the diode clamps the collector. A peak can be seen immediately after turn-on. However, this is due to the diode and is explained later. In an inverter regulator, the diodes on the secondary side act as a clamp. Viewed from the primary side, however, a leakage inductance is present. This results in an inductive spike which must be taken account of as it is added to double the VIN voltage. chopper regulator IN VCE IC inverter regulator IN L VO D1 L Q VO C D C D2 IC IC on on off VCE off VCE VIN VIN 2 VIN VCE Ton VCE Ton 2 VIN VIN t t IC IC Ton t 12 Ton t MB3759 The figure below shows an example of the ASO characteristics for a forward-biased power transistor (2SC3058A) suitable for switching. Check that the ASO characteristics for the transistor you intend to use fully covers the load curve. Next, check whether the following conditions are satisfied. If so, the transistor can be expected to perform the switching operation safely. • The intended ON time does not exceed the ON-time specified for the ASO characteristic. • The OFF-time ASO characteristic satisfies the intended operation conditions. • Derating for the junction temperature has been taken into account. For a switching transistor, the junction temperature is closely related to the switching speed. This is because the switching speed becomes slower as the temperature increases and this affects the switching losses. Forward-biased area of safe operation single pulse 2SC3058A (450 V, 30 A) 50 TC = +25˚C Single pulse IC (Pulse) max. IC max. Pw µs 10 5 s 1m ms Collector current IC (A) . 10 0 .C 50 D = 20 2 1 0.5 0.2 0.1 0.05 5 10 20 50 100 200 500 1000 Collector - emitter voltage VCE (V) 2. Selecting the Diode Consideration must be given to the switching speed when selecting the diode. For chopper regulators in particular, the diode affects the efficiency and noise characteristics and has a big influence on the performance of the switching regulator. If the reverse recovery time of the diode is slower than the turn-on time of the transistor, an in-rush current of more than twice the load current occurs resulting in noise (spikes) and reduced efficiency. As a rule for diode selection, use a diode with a reverse recovery time trr that is sufficiently faster than the transistor tr. 13 MB3759 ■ APPLICATION IN PRACTICAL CIRCUITS 1. Error Amplifier Gain Adjustment Take care that the bias current does not become large when connecting an external circuit to the FB pin (pin 3) for adjusting the amplifier gain. As the FB pin is biased to the low level by a sink current, the duty cycle of the output signal will be affected if the current from the external circuit is greater than the amplifier can sink. The figure below shows a suitable circuit for adjusting the gain. It is very important that you avoid having a capacitive load connected to the output stage as this will affect the response time. OUT R1 + Vo VREF − RIN R2 RF 2. Synchronized Oscillator Operation The oscillator can be halted by connecting the CT pin to the GND pin. If supplying the signal externally, halt the internal oscillator and input to the CT pin. Using this method, multiple ICs can be used together in synchronized operation. For synchronized operation, set one IC as the master and connect the other ICs as shown in the diagram. Slave Master RT 14 CT VREF RT CT MB3759 3. Soft Start A soft start function can be incorporated by using the dead-time control element. VREF VREF R2 VR VD = R1+R2 R1 Cd DT DT R2 Rd Setting the dead-time Incorporating soft start When the power is turned on, Cd is not yet charged and the DT input is pulled to the VREF pin causing the output transistor to turn off. Next, the input voltage to the DT pin drops in accordance with the Cd, Rd constant causing the output pulse width to increase steadily, providing stable control circuit operation. If you wish to use both dead-time and softstart, combine these in an OR configuration. VREF Cd R1 DT Rd R2 4. Output Current Limiting (Fallback system using a detection resistor inserted on the output side) (1) Typical example VREF RS VO IO VO R3 VO1 R1 + VIO D − R4 R5 R2 0 GND 0 IL3 IL2 IL1 IO 15 MB3759 • Initial limit current IL1 VO > R4 VREF R3 + R4 The condition for VO is: As the diode is reverse biased R1 VO – VIO R1 + R2 VIO VO R1 ∴IL1 = – RS R1 + R2 RS RS IL1 = Eq. (1) (where R2 >> R1) VIO is the input offset voltage to the op-amp (-10 mV ≤ VIO ≤ +10 mV) and this causes the variation in IL. Accordingly, if for example the variation in IL is to be limited to ±10 %, using equation (1) and only considering the variation in the offset voltage gives the following: IO = 1 VIO R1 ( R2 >> R1 ) ( VO + VEE ) − RS R1 + R2 RS This indicates a setting of 100 mV or more is required. • Polarity change point IL2 As this is the point where the diode becomes forward biased, it can be calculated by substituting [R4/(R3+R4) VREF - VD] for VO in equation (where VD is the forward voltage of the diode). IL2 = VIO R1 R4 / (R3 + R4) · VREF – VD – R1 + R2 RS RS • Final limit current IL3 The limit current for VO = 0 when R2 >> R1 is the point where the voltages on either side of RS and on either side of R5 are biased. R4R5 VREF − R3R5 VD − R4R5 VD − VIO R3R4 + R3R5 + R4R5 VIO 1 1 R4 (2) Eq. ( VREF − VD ) − ∴IL3 = RS RS 1 + (R 3 // R 4) / R5 R3 + R4 RS IL3 = R3//R4 is the resistance formed by R3 and R4 in parallel (R3R4/(R3 + R4)). When R3//R4 << R5, equation (2) becomes: IL3 C = VIO 1 R4 ( VREF – VD ) – RS RS R3 + R4 In addition to determining the limit current IL3 for VO = 0, R3, R4, R5, and diode D also operate as a starter when the power is turned on. • Starter circuit The figure below shows the case when the starter circuit formed by R3, R4, R5, and D is not present. The output current IO after the operation of the current limiting circuit is: IO = VIO VO R1 − RS R1 + R2 RS When VO = 0 such as when the power is turned on, the output current IO = -VI O / RS and, if the offset voltage VIO is positive, the output current is limited to being negative and therefore the output voltage does not rise. Accordingly, if using a fallback system with a detection resistor inserted in the output, always include a starter circuit, expect in the cases described later. 16 MB3759 VO IO RS VO VIO > 0 R1 VIO < 0 VO + VIO − R2 GND 0 IO IL1 (2) Example that does not use a diode VREF VO IO RS VO R3 R1 R4 > R1+R2 R3+R4 VO R1 + VIO − R1 R4 < R1+R2 R3+R4 R4 R2 0 GND 0 IL1 IO The output current IO after current limiting is: IO = 1 R1 R4 R4 [( – VREF – VIO ] (R2 >> R1) ) VO + RS R1 + R2 R3 + R4 R3 + R4 In this case, a current flows into the reference voltage source via R3 and R4 if VO > VREF. To maintain the stability of the reference voltage, design the circuit such that this does not exceed 200 µA. 17 MB3759 (3) When an external stabilized negative power supply is present RS IO VO VO VO R1 + VIO VO* − R2 −VEE 0 0 I L5 I L1 IO The output current IO after current limiting is: IO = 1 VIO R1 (VO + VEE) – (R2 >>R1) RS R1 + R2 RS If the output is momentarily shorted, VO* goes briefly negative. In this case, set the voltage across R1 to 300 mV or less to ensure that a voltage of less than -0.3 V is not applied to the op-amp input. 18 MB3759 5. Example Power Supply Voltage Supply Circuit (1) Supplied via a Zener diode VIN VIN VZ R VCC C VZ VCC MB3759 MB3759 VCC = VIN − VZ VCC = VZ (2) Supplied via a three-terminal regulator Three-terminal regulator AC VCC MB3759 6. Example Protection Circuit for Output Transistor Due to its monolithic IC characteristics, applying a negative voltage greater than the diode voltage ( =: 0.5 V) to the substrate (pin 7) of the MB3759 causes a parasitic effect in the IC which can result in misoperation. Accordingly, the following measures are required if driving a transformer or similar directly from the output transistor of the IC. (1) Protect the output transistor from the parasitic effect by using a Schottky barrier diode. 8 9 11 SBD 10 19 MB3759 (2) Provide a bias at the anode-side of the diode to clamp the low level side of the transistor. 8 14 11 7.5 kΩ = 0.7 V 1.2 kΩ (3) Drive the transformer via a buffer transistor. VCC 8 9 20 0.1 µF MB3759 7. Typical Application (1)Chopper regulator 1Ω AC 100 V + 15 V + + 24 V 2.5 A 1 mH 50 Ω 2 kΩ 10 kΩ 16 kΩ VCC 10 kΩ 100 kΩ 0.22 µF 2.2 kΩ 10 µF + 47 kΩ 5.6 kΩ 5.1 kΩ 300 Ω 5.1 kΩ FB E1 −IN1 C1 +IN1 C2 VREF E2 −IN2 RT + +IN2 CT DT OC GND 2200 µF 20 kΩ 2200 pF 5 kΩ 0.1 Ω 21 MB3759 (2) Inverter regulator AC 100 V + 15 V + + A 24 V 2.5 A 33 Ω + 100Ω 0.1 Ω 100Ω 33 Ω B A 10 kΩ VCC 10 kΩ 16 kΩ 100 kΩ 0.22 µF 2.2 kΩ 5.6 kΩ + 10 µF 47 kΩ FB E1 −IN1 C1 +IN1 C2 VREF E2 −IN2 RT +IN2 CT 5.1 kΩ OC DT 20 kΩ GND 300 Ω 5.1 kΩ 5 kΩ B 22 REF 2200 pF 2200 µF MB3759 ■ ORDERING INFORMATION Part number Package MB3759P 16-pin plastic DIP (DIP-16P-M04) MB3759C 16-pin ceramic DIP (DIP-16C-C01) MB3759PF 16-pin plastic SOP (FPT-16P-M06) Remarks 23 MB3759 ■ PACKAGE DIMENSIONS 16-pin plastic DIP (DIP-16P-M04) +0.20 19.55 –0.30 .770 +.008 –.012 INDEX-1 6.20±0.25 (.244±.010) INDEX-2 0.51(.020)MIN 4.36(.172)MAX 0.25±0.05 (.010±.002) 3.00(.118)MIN 0.46±0.08 (.018±.003) +0.30 0.99 –0 +.012 .039 –0 1.27(.050) MAX C +0.30 1.52 –0 +.012 .060 –0 7.62(.300) TYP 15°MAX 2.54(.100) TYP 1994 FUJITSU LIMITED D16033S-2C-3 Dimensions in mm (inches) (Continued) 24 MB3759 (Continued) 16-pin ceramic DIP (DIP-16C-C01) +0.71 19.30 –0.15 .760 +.028 –.006 R0.64(.025) REF +0.30 6.30 –0.10 +.012 .248 –.004 +0.36 7.90 –0.15 +.014 .311 –.006 5.08(.200)MAX 0.81±0.30 (.032±.012) +0.10 0.25 –0.05 +.004 .010 –.002 3.40±0.36 (.134±.014) +0.05 1.52 –0.10 +.002 .060 –.004 2.54±0.25 (.100±.010) 1.27(.050) MAX C 0.81(.032) TYP +0.13 0.46 –0.08 7.62(.300) TYP 0° 15° +.005 .018 –.003 17.78(.700)REF 1994 FUJITSU LIMITED D16011SC-2-3 Dimensions in mm (inches) (Continued) 25 MB3759 (Continued) 16-pin plastic SOP (FPT-16P-M06) +0.25 2.25(.089)MAX (Mounting height) +.010 10.15 –0.20 .400 –.008 INDEX 0.05(.002)MIN (STAND OFF) 5.30±0.30 (.209±.012) +0.40 6.80 –0.20 7.80±0.40 (.307±.016) +.016 .268 –.008 "B" 1.27(.050) TYP 0.45±0.10 (.018±.004) +0.05 Ø0.13(.005) 0.15 –0.02 M +.002 .006 –.001 Details of "A" part Details of "B" part 0.40(.016) 0.15(.006) 0.20(.008) "A" 0.10(.004) 8.89(.350)REF C 0.50±0.20 (.020±.008) 0.20(.008) 0.18(.007)MAX 0.18(.007)MAX 0.68(.027)MAX 0.68(.027)MAX 2000 FUJITSU LIMITED F16015S-2C-5 Dimensions in mm (inches) 26 MB3759 FUJITSU LIMITED For further information please contact: Japan FUJITSU LIMITED Corporate Global Business Support Division Electronic Devices KAWASAKI PLANT, 4-1-1, Kamikodanaka, Nakahara-ku, Kawasaki-shi, Kanagawa 211-8588, Japan Tel: +81-44-754-3763 Fax: +81-44-754-3329 http://www.fujitsu.co.jp/ North and South America FUJITSU MICROELECTRONICS, INC. 3545 North First Street, San Jose, CA 95134-1804, U.S.A. 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