FUJITSU SEMICONDUCTOR
DATA SHEET
DS04-27300-2E
ASSP
VOLTAGE DETECTOR
MB3761
VOLTAGE DETECTOR
Designed for voltage detector applications, the Fujitsu MB3761 is a dual
comparator with a built-in high precision reference voltage generator.
Outputs are open-collector outputs and enable use of the OR-connection
between both channels. Both channels have hysteresis control outputs.
PLASTIC PACKAGE
SIP-08P-M03
PLASTIC PACKAGE
DIP-08P-M01
Because of a wide power supply voltage range and a low power supply
current, the MB3761 is suitable for power supply monitors and battery
backup systems.
PLASTIC PACKAGE
FPT-08P-M01
• Wide power supply voltage range: 2.5 V to 40 V
• Low power and small voltage dependency supply current: 250 µA
typical.
• Built-in stable low voltage generator: 1.20 V typical.
• Easy-to-add hysteresis characteristics.
• Package: 8-pin Plastic SIP Package (Suffix: -PS)
8-pin Plastic DIP Package (Suffix: -P)
8-pin Plastic FPT Package (Suffix: -PF)
ABSOLUTE MAXIMUM RATINGS (See NOTE)
Rating
Symbol
Value
VCC
41
V
Output Voltage
VO
41
V
Output Current
IO
50
mA
Input Voltage
VIN
-0.3 to +6.5
V
Power Dissipation
PD
350
(TA ≤ 70°C)
mW
-55 to 125
°C
TSTG
(FRONT VIEW)
B (+)
+
—
(—)
Unit
Power Supply Voltage
Storage Temperature
PIN ASSIGNMENT
A
(—)
8
VCC
7
HYS-B
6
OUT-B
5
GND
4
OUT-A
3
IN-A
2
HYS-A
1
IN-B
—
+
(+)
(TOP VIEW)
(+)
NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections
of this data sheet. Exposure to absolute maximum rating conditions
for extended periods may affect device reliability.
IN-B
HYS-A
1
+
B
—
2
8
VCC
7
HYS-B
6
OUT-B
5
GND
(—)
(+)
IN-A
3
+
OUT-A
4
(—)
A
—
This device contains circuitry to protect the inputs against damage due
to high static voltages or electric fields. However, it is advised that
normal precautions be taken to avoid application of any voltage
higher than maximum rated voltages to this high impedance circuit.
1
MB3761
Figure 1. MB3761 Equivalent Circuit
8
V CC
2
HYS-A
7
4
HYS-B
OUT-A
V REF
∼ 1.2V
5
GND
■
3
1
6
IN-A
IN-B
OUT-B
RECOMMENDED OPERATING CONDITIONS
Parameter
2
Symbol
Value
Unit
Power Supply Voltage
VCC
2.5 to 40
V
Operating Temperature
TA
-20 to 75
°C
Output Current at pin 4
IO4
4.5
mA
Output Current at pin 6
IO6
3.0
mA
MB3761
■
ELECTRICAL CHARACTERISTICS
TA=25°C, VCC=5V
Parameter
Power Supply Voltage
Threshold Voltage
Deviation of Threshold Voltage
Offset Voltage between Outputs
Designator
Conditions
Values
Min
Typ
Max
Unit
ICCL
VCC=40 V, VIL=1.0 V
-
250
400
µA
ICCH
VCC=40 V, VIH =1.5 V
-
400
600
µA
VTH
IO =2 mA, VO=1 V
1.15
1.20
1.25
V
2.5 V ≤ VCC ≤ 5.5 V
-
3
12
mV
4.5 V ≤ VCC ≤ 40 V
-
10
40
mV
VOOSA
IOA= 4.5 mA, VOA=2 V
IHA= 20 mA, VHA=3 V
-
2.0
-
mV
VOSSB
IOB=3 mA, VOB=2 V
IHB=3 mA, VHB=2 V
-
2.0
-
mV
-20°C ≤ TA ≤ 70°C
-
±0.05
-
mV/°C
-10
-
-10
mV
∆VTH1
∆VTH2
Temperature Coefficient of
Threshold Voltage
α
Difference Voltage on
Threshold Voltage between
Channel
∆VTHAB
IIL
VIL=1.0 V
-
5
IIH
VIH=1.5 V
-
100
500
nA
Output Leakage Current
IOH
VO=40 V, VIL=1.0 V
-
-
1
µA
Hysteresis Output Leakage
Current
IHLA
VCC=40 V, VHA=0 V,
VIL=1.0 V
-
-
0.1
µA
IHHB
VHB=40 V, VIH=1.5 V
-
-
1
µA
IOLA
VO=1.0 V, VIH=1.5 V
6
12
-
mA
IOLB
VO=1.0 V, VIH=1.5 V
4
10
-
mA
IHHA
VH=0 V, VIH=1.5 V
40
80
-
µA
IHLB
VH=1.0 V,VIL =1.0 V
4
10
-
mA
VOLA
IO= 4.5 mA, VIH =1.5 V
-
120
400
mV
VOLB
IO= 3.0 mA, VIH=1.5 V
-
120
400
mV
VHHA
IH= 20 µA, VIH=1.5 V
-
50
200
mV
VHLB
IH= 3.0 mA, VIL=1.0 V
-
120
400
mV
tPHL
RL=5 KΩ
-
2
-
µs
tPLH
RL=5 KΩ
-
3
-
µs
Input Current
Output Sink Current
Hysteresis Current
Output Saturation Voltage
Hysteresis Saturation
Output Delay Time
nA
3
MB3761
Figure 2. Operational Definitions
V OA
V IN
V CC
R4
R6
RL
R1
1
RL
8
V ILA
R5
V HB
2
V IHA
V IN
V HB
7
HYS-B
R3
3
6
4
5
OUT-B
V OB
VOB
V IN
R2
V OA
OUT-A
V IN
GND
V ILB
V IHB
NOTE)
4
VIHA =(1+
R1
)V R
R2
VILA =(1+
R1
R 2 // R
3
)V R -
R1
V
R 3 CC
V IHB =(1+
R4
R 5 // R
V ILB =(1+
R4
)V R
R5
6
)V R
VR
∼
VTH (
∼
1.20V)
R 2 // R 3 =
R2 R3
R2 + R 3
R 5 // R 6 =
R5 R6
R5 + R 6
MB3761
■
TYPICAL PERFORMANCE CHARACTERISTICS
Fig. 3 Power
Supply
Current
ICC (µA)
Power Supply Current
vs Power Supply Voltage
Hysteresis (A) Current
vs Power Supply Voltage
Hysteresis 150
(A) Current
IHHA ( µA)
500
70°C
25°C
400
Fig. 4 -
70°C
120
25°C
-20°C
VIH = 1.5V
70°C
300
-20°C
90
25°C
200
VIH=1.5V
60
-20°C
VIL=1.0V
100
30
0
0
0
10
20
30
Power Supply Voltage VCC
Output
(A)
Voltage
VOLA (V)
1.0
Fig. 6 -
0.8
30
40
(V)
25°C
70°C
-20°C
VCC=5V
VIH=1.5V
70°C
0.6
0.4
0.4
0.2
0.2
0
0
0
5
10
15
20
25
0
5
Output (A) Current IOLA (mA)
Threshold 1.22
Voltage
VTH (V)
1.21
20
Output (B) Voltage
vs. Output (B) Current
Output 1.0
(B)
Voltage
VOLB (V) 0.8
-20°C 25°C
VCC=5V
VIH=1.5V
10
Power Supply Voltage VCC
(V)
Fig. 5 - Output (A) Voltage
vs. Output (A) Current
0.6
0
40
10
15
20
25
Output (B) Current IOLB (mA)
Fig. 7 - Threshold Voltage
vs. Power Supply Voltage
Fig. 8 Threshold
Voltage
VTH (V)
1.22
Threshold Voltage
vs. Temperature
1.21
1.20
1.20
TA=25°C
1.19
1.19
VCC=5V
1.18
1.17
1.18
0
10
20
30
Power Supply Voltage VCC (V)
40
1.17
-20
0
20
40
60
80
Temperature TA (°C)
5
MB3761
■
APPLICATION EXAMPLES
Figure 9. Addition of Hysteresis
VOA
VCC (VIN)
R1
R2
1
8
2
7
3
6
4
5
RL
VOA
VIH (VCC)
VILA
R3
VIHA =(1+
GND
R1 + R2
)V
R3
VIHA
VILA =(1+
R2
)VR
R3
IN
VCC
R1
R
R2
R3
VHB
L
1
8
2
7
VHB
3
6
VOB
4
5
C1
VIH
VOB
GND
VIH
VILB
Note:
6
All calculations occur with the output voltage at 0. The
hysteresis values are adjusted for load condition and
saturation voltage.
VIHB = (1 +
R1
)V R
R2
VIHB
V ILB =(1+
R1
R2 + R3
)VR
MB3761
■
APPLICATION EXAMPLES (Continued)
Figure 10. Voltage Detection for Alarm
VCC
VO
R3
R1
R2
1
8
2
7
3
6
4
5
RL
VO
VCCL
R4
VCCH = (1+
GND
VCC
VCCH
R1
)VR
R2
VCCL = (1+
R3
R4
)VR
VCCL ≥ 2.5 V
For hysteresis, a positive feedback from pin 2 or 7 is required.
Figure 11. Voltage Detection for Alarm
VCC
VO
R3
R1
R2
R4
1
8
2
7
3
6
4
5
RL
VO
VCC
VCCL
GND
VCCH = (1 +
R3
)VR
R4
VCCH
VCCL = (1 +
R1
)VR
R2
VCCL ≥ 2.5 V
7
MB3761
■
APPLICATION EXAMPLES (Continued)
Figure 12. Programmable Zener
VCC
R2
VZ ∼ (1+ R3 ) VR
R1
VZ
R2
+ R3
1
8
2
7
3
6
4
5
VZ
≤
R2 +R3
VCC - VZ
R1
GND
Channel B can be used independently.
Figure 13. Recovery Reset Circuit
VCC = 5 V
R1
R2
3.3 KΩ
6.8 KΩ
R3
15 KΩ
330 KΩ
R4
1
8
2
7
3
6
4
5
OUT
R5
6.8 KΩ
0.1µF
C1
OUT
8
GND
≤
6mA
MB3761
■
TYPICAL CHARACTERISTICS
Figure 14. DC Characteristics
Figure 15. Response Characteristics
VO (V) 6
VCC
5
VCCL
VCC
4
VCCH
(V)
0
VO
4.4
2
VO (V)
tRST
0
0
0
•
1
3
VCC (V)
4
5
6
∼
30 ms
Voltage Threshold Levels (VCCL and VCCH) and
Hysteresis Width can be changed by the resistors
(R1 through R4).
R1 + R2 + R3
VCCL =
VTH
R3
VCCH
•
2
= VCCL +
R1 (R2 + R3 )
VTH
R3 R4
Power-On Reset Time is provided by the following
approximate equation:
VTH
R1
tRST
= -C1 R4 • In { 1 (1 +
VCC
R2 + R3
•
The recommended value of hFE of the external
transistor is from 50 to 200.
•
In the case of an instant power fail,
the remaining charge in C1 effects tRST.
•
If necessary, the reversed output is provided
on HYS terminal
)}
9
MB3761
■
PACKAGE DIMENSIONS (Continued)
8 pin, Plastic SIP
(SIP-08P-M03)
3.26±0.25
(.128±.010)
+0.15
19.65 –0.35
+.006
.774 –.014
INDEX-1
6.20±0.25
(.244±.010)
8.20±0.30
(.323±.012)
INDEX-2
+0.30
0.99 –0
4.00±0.30
(.157±.012)
+.012
.039 –0
2.54(.100)
TYP
C
10
1994 FUJITSU LIMITED S08010S-3C-2
+0.30
1.52 –0
+.012
.060 –0
0.50±0.08
(.020±.003)
0.25±0.05
(.010±.002)
Dimensions in mm (inches).
MB3761
■
PACKAGE DIMENSIONS (Continued)
8 pin, Plastic DIP
(DIP-08P-M01)
+0.40
9.40 –0.30
+.016
.370 –.012
6.20±0.25
(.244±.010)
1 PIN INDEX
0.51(.020)MIN
4.36(.172)MAX
0.25±0.05
(.010±.002)
3.00(.118)MIN
+0.30
0.99 –0
.039
0.89
.035
C
+.012
–0
+0.35
–0.30
+.014
–.012
1994 FUJITSU LIMITED D08006S-2C-3
0.46±0.08
(.018±.003)
+0.30
1.52 –0
+.012
–0
.060
2.54(.100)
TYP
7.62(.300)
TYP
15°MAX
Dimensions in mm (inches).
11
MB3761
■
PACKAGE DIMENSIONS (Continued)
8 pin, Plastic SOP
(FPT-08P-M01)
2.25(.089)MAX
+0.25
+.010
6.35 –0.20 .250 –.008
0.05(.002)MIN
(STAND OFF)
5.30±0.30
(.209±.012)
INDEX
1.27(.050)
TYP
0.45±0.10
(.018±.004)
3.81(.150)REF
+0.40
6.80 –0.20
+.016
.268 –.008
7.80±0.40
(.307±.016)
+0.05
Ø0.13(.005)
M
0.15 –0.02
+.002
.006 –.001
0.50±0.20
(.020±.008)
Details of "A" part
0.20(.008)
0.50(.020)
"A"
0.18(.007)MAX
0.10(.004)
C
12
1994 FUJITSU LIMITED F08002S-4C-4
0.68(.027)MAX
Dimensions in mm(inches).
FUJITSU LIMITED
For further information please contact:
Japan
FUJITSU LIMITED
Corporate Global Business Support Division
Electronic Devices
KAWASAKI PLANT, 4-1-1, Kamikodanaka
Nakahara-ku, Kawasaki-shi
Kanagawa 211-88, Japan
Tel: (044) 754-3763
Fax: (044) 754-3329
North and South America
FUJITSU MICROELECTRONICS, INC.
Semiconductor Division
3545 North First Street
San Jose, CA 95134-1804, U.S.A.
Tel: (408) 922-9000
Fax: (408) 432-9044/9045
Europe
FUJITSU MIKROELEKTRONIK GmbH
Am Siebenstein 6-10
63303 Dreieich-Buchschlag
Germany
Tel: (06103) 690-0
Fax: (06103) 690-122
Asia Pacific
FUJITSU MICROELECTRONICS ASIA PTE. LIMITED
#05-08, 151 Lorong Chuan
New Tech Park
Singapore 556741
Tel: (65) 281-0770
Fax: (65) 281-0220
All Rights Reserved.
The contents of this document are subject to change without
notice. Customers are advised to consult with FUJITSU sales
representatives before ordering.
The information and circuit diagrams in this document presented
as examples of semiconductor device applications, and are not
intended to be incorporated in devices for actual use. Also,
FUJITSU is unable to assume responsibility for infringement of
any patent rights or other rights of third parties arising from the
use of this information or circuit diagrams.
FUJITSU semiconductor devices are intended for use in
standard applications (computers, office automation and other
office equipment, industrial, communications, and measurement
equipment, personal or household devices, etc.).
CAUTION:
Customers considering the use of our products in special
applications where failure or abnormal operation may directly
affect human lives or cause physical injury or property damage,
or where extremely high levels of reliability are demanded (such
as aerospace systems, atomic energy controls, sea floor
repeaters, vehicle operating controls, medical devices for life
support, etc.) are requested to consult with FUJITSU sales
representatives before such use. The company will not be
responsible for damages arising from such use without prior
approval.
Any semiconductor devices have inherently a certain rate of
failure. You must protect against injury, damage or loss from
such failures by incorporating safety design measures into your
facility and equipment such as redundancy, fire protection, and
prevention of over-current levels and other abnormal operating
conditions.
If any products described in this document represent goods or
technologies subject to certain restrictions on export under the
Foreign Exchange and Foreign Trade Control Law of Japan, the
prior authorization by Japanese government should be required
for export of those products from Japan.
F9703
FUJITSU LIMITED Printed in Japan
24