Renesas CR12PM-12B Thyristor Datasheet

Preliminary Datasheet
CR12PM-12B
R07DS0119EJ0100
Rev.1.00
Sep 03, 2010
Thyristor
Medium Power Use
Features




 The product guaranteed maximum junction
temperature of 150°C
 Insulated Type
 Planar Passivation Type
 UL Recognized: Yellow Card No. E223904
IT (AV) : 12 A
VDRM : 600 V
IGT : 30 mA
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
2
1. Cathode
2. Anode
3. Gate
3
1
1
2 3
Applications
Switching mode power supply, motor control, heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
R07DS0119EJ0100 Rev.1.00
Sep 03, 2010
Symbol
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Voltage class
12
600
720
480
600
480
Unit
V
V
V
V
V
Page 1 of 6
CR12PM-12B
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Mass
Isolation voltage
Preliminary
Symbol
IT (RMS)
IT (AV)
Ratings
18.8
12
Unit
A
A
ITSM
360
A
I2 t
544
A2s
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
5
0.5
6
10
2
– 40 to +150
– 40 to +150
2.0
W
W
V
V
A
°C
°C
g
Viso
2000
V
Conditions
Commercial frequency, sine half wave
180° conduction, Tc = 81°C
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
each terminal to case
Electrical Characteristics
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Symbol
IRRM
IDRM
VTM
Min.
—
—
—
Typ.
—
—
—
Max.
2.0/5.0
2.0/5.0
1.6
Unit
mA
mA
V
Test conditions
Tj = 125°C/150°C, VRRM applied
Tj = 125°C/150°C, VDRM applied
VGT
—
—
1.5
V
Tc = 25°C, ITM = 40 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 1 A
VGD
0.2/0.1
—
—
V
IGT
IH
Rth (j-c)
—
—
—
—
15
—
30
—
3.2
mA
mA
°C/W
Tj = 125°C/150°C,
VD = 1/2 VDRM
Tj = 25°C, VD = 6 V, IT = 1 A
Tj = 25°C, VD = 12 V
Junction to caseNote1
Notes: 1. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
R07DS0119EJ0100 Rev.1.00
Sep 03, 2010
Page 2 of 6
CR12PM-12B
Preliminary
Performance Curves
Maximum On-State Characteristics
Rated Surge On-State Current
103
400
Surge On-State Current (A)
102
101
1.2
1.6
2.0
2.4
2.8
Gate Voltage (V)
101
102
× 100 (%)
Gate Trigger Current vs.
Junction Temperature
PGM = 5 W
VFGM = 6 V
PG(AV) =
0.5 W
IFGM
=2A
IGT = 30 mA
VGD = 0.1 V
10–2
101
Gate Trigger Voltage (Tj = t°C)
Gate Trigger Voltage (Tj = 25°C) × 100 (%)
80
Gate Characteristics
10–1
102
103
104
103
Typical Example
102
101
100
–40
0
40
80
160
120
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
Typical Example
102
101
100
–40
160
Conduction Time (Cycles at 60 Hz)
VGT = 1.5 V
100
240
On-State Voltage (V)
102
101
320
0
100
3.2
Gate Trigger Current (Tj = t°C)
Gate Trigger Current (Tj = 25°C)
100
0.8
0
40
80
120
Junction Temperature (°C)
R07DS0119EJ0100 Rev.1.00
Sep 03, 2010
160
Transient Thermal Impedance (°C/W)
On-State Current (A)
Tc = 25°C
102
101
100
10-1
10-3
10-2
10-1
100
101
Time (s)
Page 3 of 6
CR12PM-12B
Preliminary
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Half Wave)
Maximum Average Power Dissipation
(Single-Phase Half Wave)
160
360°
180°
Resistive,
inductive loads
30
120°
90°
60°
θ = 30°
20
10
360°
100
80
60
60° 120°
40
θ = 30°
90° 180°
0
0
4
8
12
16
20
24
0
4
8
12
16
20
24
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Single-Phase Full Wave)
Allowable Case Temperature vs.
Average On-State Current
(Single-Phase Full Wave)
50
160
140
40
180°
120°
30
60°
90°
θ = 30°
20
θ
10
θ
Case Temperature (°C)
Average Power Dissipation (W)
θ
120
20
0
360°
4
8
12
16
20
θ
120
Resistive loads
100
80
60
60°
40
0
24
θ
360°
20
Resistive loads
0
0
0
120°
θ = 30°
90°
4
12
8
180°
16
20
24
Average On-State Current (A)
Average On-State Current (A)
Maximum Average Power Dissipation
(Rectangular Wave)
Allowable Case Temperature vs.
Average On-State Current
(Rectangular Wave)
160
θ
40
360°
Resistive,
30 inductive loads
120°
90°
180° 270°
DC
60°
θ = 30°
20
10
Case Temperature (°C)
50
Average Power Dissipation (W)
Resistive,
inductive loads
140
θ
40
Case Temperature (°C)
Average Power Dissipation (W)
50
Resistive,
inductive loads
140
120
360°
100
80
60
60° 120°
40
θ = 30°
20
0
0
4
8
12
16
20
Average On-State Current (A)
R07DS0119EJ0100 Rev.1.00
Sep 03, 2010
24
θ
0
0
4
270°
90° 180°
8
12
DC
16
20
24
Average On-State Current (A)
Page 4 of 6
CR12PM-12B
Preliminary
101
–40
0
40
80
120
× 100 (%)
160
Holding Current (Tj = t°C)
Holding Current (Tj = 25°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
Tj = 125°C
140
120
100
80
60
40
20
0
101
102
103
104
Repetitive Peak Reverse Voltage vs.
Junction Temperature
160
Typical Example
120
80
40
0
–40
0
40
80
120
160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
Tj = 150°C
140
120
100
80
60
40
20
0
101
102
103
104
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Holding Current vs.
Junction Temperature
Gate Trigger Current vs.
Gate Current Pulse Width
103
Typical Example
102
101
–40
0
40
80
120
Junction Temperature (°C)
R07DS0119EJ0100 Rev.1.00
Sep 03, 2010
160
× 100 (%)
× 100 (%)
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
× 100 (%)
Junction Temperature (°C)
Repetitive Peak Reverse Voltage (Tj = t°C)
Repetitive Peak Reverse Voltage (Tj = 25°C)
102
× 100 (%)
Typical Example
Breakover Voltage (dv/dt = vV/μs)
Breakover Voltage (dv/dt = 1V/μs)
103
Gate Trigger Current (tw)
Gate Trigger Current (DC)
Breakover Voltage (Tj = t°C)
Breakover Voltage (Tj = 25°C)
× 100 (%)
Breakover Voltage vs.
Junction Temperature
103
Typical Example
102
101
10−1
100
101
102
Gate Current Pulse Width (μs)
Page 5 of 6
CR12PM-12B
Preliminary
Package Dimensions
Package Name
TO-220F
JEITA Package Code
SC-67
RENESAS Code
PRSS0003AA-A
Previous Code
⎯
MASS[Typ.]
2.0g
Unit: mm
10.5Max
2.8
17
8.5
5.0
1.2
5.2
φ3.2±0.2
13.5Min
3.6
1.3Max
0.8
2.54
0.5
2.6
4.5
2.54
Order Code
Lead form
Straight type
Lead form
Standard packing
Vinyl sack
Plastic Magazine (Tube)
Quantity
100
50
Standard order code
Type name
Type name – Lead forming code
Standard order
code example
CR12PM-12B
CR12PM-12B-A8
Note : Please confirm the specification about the shipping in detail.
R07DS0119EJ0100 Rev.1.00
Sep 03, 2010
Page 6 of 6
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