Fuji ESAD39MC Fast recovery diode Datasheet

ESAD39M(C,N,D) (10A)
(400V to 600V / 10A)
Outline drawings, mm
15.5 ±0.3
3.2 +0.3
±0.3
+0.2
20 Min
1.6 ±0.3
1.1 —0.1
5.45 ±0.2
Features
Insulated package by fully molding
Super high speed switching
Low VF in turn on
±0.3
21.5
5.5 ±0.2
2.3 ±0.2
2.1±0.3
5.45 ±0.2
5.5
ø3.2 ±0.2
9.3 ±0.3
FAST RECOVERY DIODE
0.6 +0.2
3.5 ±0.2
1. Gate
2. Drain
3. Source
JEDEC
EIAJ
Connection diagram
High reliability
2
Applications
ESAD39M-
C
1
ESAD39M-
N
1
ESAD39M-
D
1
3
2
High speed power switching
3
2
Maximum ratings and characteristics
3
Absolute maximum ratings
Item
Symbol
Rating
Conditions
-04
-06
Unit
Repetitive peak reverse voltage
VRRM
400
600
V
Non-repetitive peak reverse voltage
VRSM
400
600
V
Isolating voltage
Viso
Terminals-to-case, AC. 1min.
Average output current
IO
Surge current
IFSM
Operating junction temperature
Storage temperature
1500
V
Square wave, duty=1/2, Tc=85°C
10*
A
Sine wave 10ms
50
A
Tj
-40 to +150
°C
Tstg
-40 to +150
°C
*Average forward current of centertap full wave connection
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VFM
IFM=4A
Reverse current
IRRM
VR=VRRM
Reverse recovery time
t rr
IF=0.1A, IR=0.2A, Irec=0.05A
Thermal resistance
Rth(j-c)
Junction to case
Max.
2.5
Unit
V
100
µA
50
ns
2.5
°C/W
ESAD39M(C,N,D)(10A)
(400V to 600V / 10A )
Characteristics
Reverse characteristics
Forward characteristics
30
10
100
5
IF
[A]
3
IR
10
[µA]
1
0.5
1
0.3
0.1
0
2
4
0.1
6
0
200
400
600
VR [V]
VF [V]
Forward power dissipation
Output current-case temperature
20
140
15
120
Tc
W F 10
[W]
[°C] 100
80
5
60
0
0
2
4
6
8
10
0
2
4
Io [A]
6
8
Io [A]
Junction capacitance characteristics
Surge capability
100
100
50
50
30
Cj
[pF] 10
IFSM
30
[A]
5
10
3
5
1
3
5
10
30
50
VR [V]
100
300
1
3
5
[time] (at 50Hz)
10
10
ESAD39M(C,N,D)(10A)
(400V to 600V / 10A )
Transient thermal impedance
101
[°C/W]
100
10-1
10-3
10-2
10-1
t [sec.]
100
101
102
Similar pages