FAIRCHILD NDM3001

February 1997
NDM3001
3 Phase Brushless Motor Driver
General Description
Features
The NDM3001 three phase brushless motor driver consists of
three N-Channel and P-Channel MOSFETs in a half bridge
configuration. These devices are produced using Fairchild's
proprietary, high cell density DMOS technology. This very high
density process is tailored to minimize on-state resistance
which reduces power loss, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage 3 phase motor driver such as
disk drive spindle motor control and other half bridge
applications.
±2.9 A, ±30 V, 2.5W
High density cell design for extremely low RDS(ON).
High power and current handling capability.
Industry standard SOIC-16 surface mount package.
________________________________________________________________________________
11,14
10
12
15
Q1
Q3
Q5
Q2
Q4
Q6
1,16
4,13
8,9
2
5
7
3,6
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
Parameter
NDM3001
Units
VDSS
Drain-Source Voltage (All Types)
±30
V
VGSS
Gate-Source Voltage (All Types)
±20
V
ID
Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 Continuous Q3+Q6 or Q5+Q2 or Q5+Q4
±2.9
A
- Pulsed
(Note 1a & 2)
±10
Total Power Dissipation
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1a)
PD
Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
W
1.6
(Note 1c)
TJ,TSTG
2.5
(Note 1b)
1.4
-55 to 150
°C
NDM3001 Rev.C
THERMAL CHARACTERISTICS
RθJA
Thermal Resistance, Junction-to-Ambient
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1a)
50
°C/W
RθJC
Thermal Resistance, Junction-to-Case
Q1+Q4 or Q1+Q6 or Q3+Q2 or
Q3+Q6 or Q5+Q2 or Q5+Q4
(Note 1)
20
°C/W
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Type
Min
All
±30
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = ± 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = ±24 V, VGS = 0 V
V
All
o
TJ=55 C
IGSS
Gate - Body Leakage, Forward
ON CHARACTERISTICS
VGS(th)
VGS = ±20 V, VDS = 0 V
All
Gate Threshold Voltage
Q1, Q3, Q5
VDS = VGS, ID = -250 µA
TJ=125 C
Q2, Q4, Q6
VDS = VGS, ID = 250 µA
o
µA
±100
nA
V
Static Drain-Source
On-Resistance
-1
-1.6
-2
- 0.75
-1.3
-1.5
1
1.5
2
0.75
TJ=125 C
Q1, Q3, Q5
VGS = -10 V, ID = -2.9 A
o
TJ=125 C
VGS = -4.5 V, ID = -2.2 A
Q2, Q4, Q6
VGS = 10 V, ID = 2.9 A
TJ=125oC
VGS = 4.5 V, ID = 2.2 A
ID(on)
µA
(Note 3)
o
RDS(ON)
±1
±10
On-State Drain Current
1.2
1.5
0.19
0.24
0.27
0.45
0.3
0.36
0.09
0.115
0.126
0.221
0.13
0.16
VGS = 10 V, VDS = -5 V
Q1, Q3, Q5
-10
VGS = 10 V, VDS = 5 V
Q2, Q4, Q6
10
Q1, Q3, Q5
VDS = -15 V, VGS = 0 V,
f = 1.0 MHz
Q1, Q3, Q5
260
Q2, Q4, Q6
185
Ω
A
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Q2, Q4, Q6
15 V, VGS = 0 V,
f = 1.0 MHz
VDS =
Q1, Q3, Q5
140
Q2, Q4, Q6
115
Q1, Q3, Q5
50
Q2, Q4, Q6
40
pF
pF
pF
NDM3001 Rev.C
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
SWITCHING CHARACTERISTICS
tD(on)
Turn - On Delay Time
Q1, Q3, Q5
VDD = -15 V, ID = -1 A,
VGEN = -10 V, RGEN = 6 Ω
Turn - On Rise Time
tr
tD(off)
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Q2, Q4, Q6
VDD = 15 V, ID = 1 A,
VGEN = 10 V, RGEN = 6 Ω
Turn - Off Delay Time
tf
Type
Min
Typ
Max
Units
Q1, Q3, Q5
10
40
ns
Q2, Q4, Q6
9
40
(Note 3)
Q1, Q3, Q5
VDS = -10 V,
ID = -3.0 A, VGS = -10 V
Q2, Q4, Q6
VDS = 10 V,
ID = 3.0 A, VGS = 10 V
Gate-Drain Charge
Q1, Q3, Q5
13
40
Q2, Q4, Q6
21
40
Q1, Q3, Q5
21
90
Q2, Q4, Q6
21
90
Q1, Q3, Q5
5
50
Q2, Q4, Q6
8
50
Q1, Q3, Q5
10
25
Q2, Q4, Q6
9.5
25
Q1, Q3, Q5
1.6
Q2, Q4, Q6
1.5
Q1, Q3, Q5
3
Q2, Q4, Q6
2.5
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode Forward Current
IS
VSD
trr
Q1, Q3, Q5
-1.2
Q2, Q4, Q6
1.2
Drain-Source Diode Forward
Voltage
VGS = 0 V, IS = -3.0 A
(Note 3)
Q1, Q3, Q5
-0.8
-1.3
VGS = 0 V, IS = 3.0 A
(Note 3)
Q2, Q4, Q6
0.8
1.3
Reverse Recovery Time
VGS = 0 V, I F = ±3.0 A,
dI F /dt = 100 A/µs
All
100
A
V
ns
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.
PD (t ) =
T J−TA
R θJ A(t )
=
T J−TA
R θJ C+RθCA(t )
= I 2D (t ) × RDS(ON )
TJ
Typical RθJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 50oC/W when mounted on a 1 in2 pad of 2oz cpper.
b. 80oC/W when mounted on a 0.027 in2 pad of 2oz cpper.
o
2
c. 90 C/W when mounted on a 0.0028 in pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDM3001 Rev. C
Typical Electrical Characteristics
10
V GS = -10V
-7.0
-6.0
4.0
6
3.5
4
2
-5.5
, DRAIN-SOURCE CURRENT (A)
8
-10
7.0
6.0
5.0
4.5
-5.0
-6
-4.5
-4.0
-4
-3.5
-2
D
3.0
-8
-3.0
I
I D , DRAIN-SOURCE CURRENT (A)
V GS =10V
0
0
0.5
1
1.5
2
VDS , DRAIN-SOURCE VOLTAGE (V)
2.5
0
3
0
-1
-2
V
DS
Figure 1. N-Channel On-Region Characteristic.
2.4
R DS(on), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R DS(on), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-5
2.6
VGS = 3.5V
2 .4
2 .2
4.0
2
1 .8
4.5
1 .6
5.0
1 .4
6.0
7
1 .2
10
1
0 .8
0
2
4
6
I D , DRAIN CURRENT (A)
8
V GS = -4.0V
2.2
2
-5.0
-5.5
1.6
-6.0
1.4
-7.0
1.2
-10
1
0.8
10
0
-2
-4
-6
I D , DRAIN CURRENT (A)
-8
-10
Figure 4. P-Channel On-Resistance Variation
with Gate Voltage and Drain Current.
1 .6
1.6
ID = 2.9A
V GS = 10V
R DS(ON), NORMALIZED
1.2
1
0.8
-25
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. N-Channel On-Resistance Variation
with Temperature.
150
DRAIN-SOURCE ON-RESISTANCE
I D = -2.9A
1.4
0.6
-50
-4.5
1.8
Figure 3. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
R DS(ON), NORMALIZED
-4
Figure 2. P-Channel On-Region
Characteristics.
2 .6
DRAIN-SOURCE ON-RESISTANCE
-3
, DRAIN-SOURCE VOLTAGE (V)
1 .4
V GS = -10V
1 .2
1
0 .8
0 .6
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
125
150
J
Figure 6. P-Channel On-Resistance Variation
with Temperature.
NDM3001 Rev.C
Typical Electrical Characteristics
2
1.8
V G S = 10 V
V GS = -10V
R DS(on), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
R DS(on) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1 .8
TJ = 125°C
1 .6
1 .4
1 .2
25°C
1
0 .8
-55°C
0 .6
TJ = 125°C
1.4
1.2
25°C
1
0
1
I
D
2
3
, DRAIN CURRENT (A)
4
-55°C
0.8
0.6
0 .4
5
0
-1
-2
I
Figure 7. N-Channel On-Resistance Variation
with Drain Current and Temperature.
D
-3
-4
-5
, DRAIN CURRENT (A)
Figure 8. P-Channel On-Resistance Variation with
Drain Current and Temperature.
5
-5
V DS =10V
T
V DS = -10V
4
J
25°C
= -55°C
-4
I D, DRAIN CURRENT (A)
I D, DRAIN CURRENT (A)
1.6
3
2
T = -55°C
J
25°C
1
125°C
-3
-2
-1
125°C
0
0
1
1.5
V
GS
2
2.5
3
, GATE TO SOURCE VOLTAGE (V)
3.5
-1
4
GS
Figure 9. N-Channel Transfer
Characteristics.
-5
1.2
V DS = V GS
1.1
V GS(th) , NORMALIZED
I D = 250µA
1
0.9
0.8
0.7
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
Figure 11. N-Channel Gate Threshold Variation with
Temperature.
GATE-SOURCE THRESHOLD VOLTAGE
V th, NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
-3
-4
, GATE TO SOURCE VOLTAGE (V)
Figure 10. P-Channel Transfer
Characteristics.
1.2
0.6
-50
-2
V
VDS = V
GS
I D =- 250µA
1.1
1
0.9
0.8
0.7
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
125
150
J
Figure 12. P-Channel Gate Threshold Variation
with Temperature.
NDM3001 Rev.C
1.08
1.12
I D = 250µA
, NORMALIZED
1.08
1.04
BV
DSS
1
0.96
0.92
-50
-25
0
25
50
75
100
125
DRAIN-SOURCE BREAKDOWN VOLTAGE
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
Typical Electrical Characteristics
150
I D = -250µA
1.06
1.04
1.02
1
0.98
0.96
0.94
-50
-25
0
25
50
75
100
T , JUNCTION TEMPERATURE (°C)
TJ , JUNCTION TEMPERATURE (°C)
125
Figure 14. P-Channel Breakdown Voltage
Variation with Temperature.
Figure 13. N-Channel Breakdown Voltage
Variation with Temperature.
500
600
300
400
300
C iss
CAPACITANCE (pF)
CAPACITANCE (pF)
200
C oss
100
60
40
20
0.1
f = 1 MHz
C rss
Ciss
200
Coss
100
50
0.5
1
2
5
10
, DRAIN TO SOURCE VOLTAGE (V)
V
20
V GS = 0 V
30
0.1
30
0.2
-V
DS
0.5
1
2
5
10
, DRAIN TO SOURCE VOLTAGE (V)
20
30
DS
Figure 16. P-Channel Capacitance
Characteristics.
Figure 15. N-Channel Capacitance
Characteristics.
10
10
V DS = -5V
-VGS , GATE-SOURCE VOLTAGE (V)
V DS = 5V
I D = 2.9A
10V
8
15V
6
4
2
V
GS
, GATE-SOURCE VOLTAGE (V)
Crss
f = 1 MHz
V GS = 0V
0.2
150
J
I D = -2.9A
-10V
8
-15V
6
4
2
0
0
0
2
Qg
4
, GATE CHARGE (nC)
6
Figure 17. N-Channel Gate Charge Characteristics.
8
0
1
2
3
4
5
6
7
Q g , GATE CHARGE (nC)
Figure 18. P-Channel Gate Charge
Characteristics.
NDM3001 Rev.C
Typical Electrical Characteristics
5
5
-I , REVERSE DRAIN CURRENT (A)
I S , REVERSE DRAIN CURRENT (A)
1
TJ = 125°C
0.1
25°C
-55°C
0.01
T J = 125°C
0 .1
25°C
0 .0 1
-55°C
0 .0 0 1
S
0.001
VGS = 0V
2
1
0 .5
V GS = 0V
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0 .0 0 0 1
0
V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure19. N-Channel Body Diode Forward Voltage
Variation with Source Current and
Temperature.
T J = -55°C
6
25°C
5
125°C
4
3
2
1
g
FS
, TRANSCONDUCTANCE (SIEMENS)
V DS = 10V
0
0
2
4
6
I D , DRAIN CURRENT (A)
8
10
SD
0 .4
0.6
0 .8
1
, BODY DIODE FORWARD VOLTAGE (V)
5
V DS =-10V
T J = -55°C
4
25°C
3
125°C
2
1
0
0
-1
t on
-5
t off
tr
RL
t d(off)
tf
90%
90%
V OUT
D
VO U T
10%
10%
DUT
G
-4
Figure 22. P-Channel Transconductance Variation
with Drain Current and Temperature.
t d(on)
R GEN
-3
D
VDD
VGS
-2
I , DRAIN CURRENT (A)
Figure 21. N-Channel Transconductance Variation
with Drain Current and Temperature.
V IN
1 .2
Figure 20. P-Channel Body Diode Forward Voltage
Variation with Source Current and
Temperature.
gFS , TRANSCONDUCTANCE (SIEMENS)
7
0 .2
-V
90%
V IN
S
50%
50%
10%
PULSE WIDTH
Figure 23. N or P-Channel Switching Test Circuit.
Figure 24. N or P-Channel Switching Waveforms.
NDM3001 Rev.C
Typical Thermal and Electrical Characteristics
3.5
3.5
I D , DC DRAIN CURRENT (A)
DC POWER DISSIPATION (W)
3
1a
2.5
2
1b
1c
1.5
3
1a
2.5
1b
1c
2
4.5"x5" FR-4 PCB
4.5"x5" FR-4 PCB
Ta = 25C
Still Air
1
Ta = 25C
Still Air
Vgs = -10V
1.5
0.5
0
0.2
0.4
0.6
0.8
0
1
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in 2 )
2oz COPPER MOUNTING PAD AREA (in 2)
Figure 25. SOIC-16 3 Leadframe Device DC Power
Dissipation versus Copper Mounting Pad Area.
Figure 26. P-Ch DC Drain Current Capability versus
Copper Mounting Pad Area.
20
4.5
10
1a
4
±I , DRAIN CURRENT (A)
1b
3.5
1c
R
3
(O
DS
N)
3
4.5"x5" FR-4 PCB
10
Vgs =10V
0
0.2
0.4
0.6
0.8
2oz COPPER MOUNTING PAD AREA (in 2 )
VGS = ±10V
0.1
0m
s
ms
s
SINGLE PULSE
R θJ A = See Note 1c
T
0.01
0.5
1
1s
10
s
DC
0.3
Still Air
2.5
1m
IT
1
0.03
Ta = 25C
LIM
10
D
I D , DC DRAIN CURRENT (A)
1
0.8 1
A
= 25°C
2
5
10
±VDS , DRAIN-SOURCE VOLTAGE (V)
30
50
Figure 28. P-Ch Typical Safe Operating Area.
Figure 27. N-Ch DC Drain Current Capability
versus Copper Mounting Pad Area.
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE
1
0.5
D = 0.5
0.2
0.2
0.1
0.05
R JA (t) = r(t) * R JA
θ
θ
R JA = See Note 1c
θ
0.1
0.05
P(pk)
0.02
0.02
0.01
0.01
t1
Single Pulse
0.005
t2
TJ - T
= P * R JA (t)
θ
Duty Cycle, D = t 1 / t 2
A
0.002
0.001
0.0001
0.001
0.01
0.1
1
10
100
300
t1 , TIME (sec)
Figure 29. Transient Thermal Response Curve.
Note:
Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
depending on the circuit board design.
NDM3001 Rev.C
SOIC-16 Tape and Reel Data and Package Dimensions
SOIC(16lds) Packaging
Configuration: Figure 1.0
Packaging Description:
SOIC-16 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further
described in the Packaging Information table.
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
FD85AB
NDM3001
Qty per Reel/Tube/Bag
Reel Size
Standard
(no flow code)
TNR
Rail/Tube
2,500
45
Pin 1
L86Z
13" Dia
-
343x64x343
530x130x83
Max qty per Box
5,000
13,500
Weight per unit (gm)
0.1437
0.1437
Weight per Reel (kg)
0.7735
-
Box Dimension (mm)
FD85AB
NDM3001
Packaging type
FD85AB
NDM3001
Packaging Option
NDM3001
SOIC (16lds) Packaging Information
FD85AB
FD85AB
NDM3001
Customized
Label
SOIC-16 Unit Orientation
Note/Comments
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label
F63TNR Label sample
LOT: CBVK741B019
QTY: 2500
FSID: NDM3000
SPEC:
F63TNR Label
ESD Label
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
(F63TNR)3
SOIC(16lds) Tape Leader and Trailer
Configuration: Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
October 1999, Rev. B
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC(16lds) Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
SOIC(16lds)
(16mm)
6.60
+/-0.30
10.35
+/-0.25
W
16.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
14.25
min
7.50
+/-0.05
P1
P0
8.0
+/-0.1
4.0
+/-0.1
K0
T
Wc
Tc
2.40
+/-0.40
0.450
+/-0.150
13.0
+/-0.3
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
B0
0.9mm
maximum
10 deg maximum component rotation
Typical
component
center line
Sketch A (Side or Front Sectional View)
A0
Component Rotation
Sketch C (Top View)
Component lateral movement
Sketch B (Top View)
SOIC(16lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim D
min
Dim A
max
Dim N
DETAIL AA
W3
See detail AA
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
16mm
Reel
Option
13" Dia
Dim A
Dim B
13.00
330
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
Dim N
4.00
100
Dim W1
0.646 +0.078/-0.000
16.4 +2/0
Dim W2
0.882
22.4
Dim W3 (LSL-USL)
0.626 – 0.764
15.9 – 19.4
July 1999, Rev. B
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC-16 (FS PKG Code S3)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.1437
October 1999, Rev. A1
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