IRFY130 MECHANICAL DATA Dimensions in mm (inches) 4.70 5.00 0.70 0.90 3.56 Dia. 3.81 VDSS ID(cont) RDS(on) 10.41 10.92 13.39 13.64 10.41 10.67 16.38 16.89 N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS 12.70 19.05 1 2 3 100V 11A 0.19W FEATURES 0.89 1.14 2.54 BSC 2.65 2.75 • HERMETICALLY SEALED TO–220 METAL PACKAGE • SIMPLE DRIVE REQUIREMENTS TO–220M – Metal Package Pad 1 – Gate Pad 2 – Drain Pad 3 – Source • LIGHTWEIGHT • SCREENING OPTIONS AVAILABLE • ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS Gate – Source Voltage ±20V ID Continuous Drain Current @ Tcase = 25°C 11A ID Continuous Drain Current @ Tcase = 100°C 7A IDM Pulsed Drain Current 44A PD Power Dissipation @ Tcase = 25°C 45W Linear Derating Factor 0.36W/°C TJ , Tstg Operating and Storage Temperature Range –55 to 150°C RqJC Thermal Resistance Junction to Case 2.8°C/W max. RqJA Thermal Resistance Junction to Ambient 80°C/W max. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.4/98 IRFY130 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. 100 Reference to 25°C V 0.1 ID = 1mA V / °C Static Drain – Source On–State VGS = 10V ID = 7A 0.19 Resistance VGS = 10V ID = 11A 0.22 VDS = VGS ID = 250mA 2 VDS ³ 15V IDS = 7A 3 VGS = 0 VGS(th) Gate Threshold Voltage V (W) S(W VDS = 0.8BVDSS 25 TJ = 125°C 250 mA Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V -100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance VGS = 0 650 Coss Output Capacitance VDS = 25V 240 Crss Reverse Transfer Capacitance f = 1MHz 44 Qg Total Gate Charge Qgs Gate – Source Charge Qgd Gate – Drain (“Miller”) Charge td(on) Turn–On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 11 ISM Pulse Source Current 43 VSD Diode Forward Voltage trr Reverse Recovery Time IS = 11A Qrr Reverse Recovery Charge di / dt £ 100A/ms VDD £ 50V LD PACKAGE CHARACTERISTICS Internal Drain Inductance LS Internal Source Inductance Semelab plc. ID = 11A nA pF 12.8 28.5 ID = 11A 1.0 6.3 VDS = 0.5BVDSS 3.8 16.6 VDS = 0.5BVDSS nC nC 30 VDD = 50V 75 ID = 11A 40 RG = 7.5W IS = 11A W 4 gfs VGS = 10V Unit ns 45 TJ = 25°C VGS = 0 TJ = 25°C (from 6mm down drain lead pad to centre of die) 8.7 (from 6mm down source lead to centre of source bond pad) 8.7 Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk A 1.5 V 240 ns 3 mC nH Prelim.4/98