Infineon BCR141 Npn silicon digital transistor Datasheet

BCR141...
NPN Silicon Digital Transistor
• Switching circuit, inverter, interface circuit,
driver circuit
• Built in bias resistor (R1=22kΩ, R2=22kΩ)
• BCR141S : Two internally isolated
transistors with good matching
in one multichip package
• BCR141S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
BCR141W
BCR141S
C
C1
B2
E2
3
6
5
4
R2
R1
R1
TR2
TR1
R2
R1
R2
1
B
2
1
2
3
E
E1
B1
C2
EHA07184
EHA07174
Type
Marking
BCR141
WDs
1=B
BCR141S
WDs
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BCR141W
WDs
1=B
1Pb-containing
Pin Configuration
2=E
2=E
3=C
3=C
-
-
Package
-
SOT23
SOT323
package may be available upon special request
1
2010-06-07
BCR141...
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
50
Collector-base voltage
VCBO
50
Input forward voltage
Vi(fwd)
60
Input reverse voltage
Vi(rev)
10
Collector current
IC
100
Total power dissipation-
Ptot
Value
250
BCR141S, T S ≤ 115°C
250
BCR141W, TS ≤ 124°C
250
Tj
Storage temperature
Tstg
Thermal Resistance
Parameter
Junction - soldering point1)
Symbol
RthJS
150
mA
°C
-65 ... 150
Value
BCR141
≤ 130
BCR141S
≤ 90
BCR141W
≤ 140
1For
V
mW
BCR141, TS ≤ 118°C
Junction temperature
Unit
Unit
K/W
calculation of RthJA please refer to Application Note Thermal Resistance
2
2010-06-07
BCR141...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO 50
V
IC = 100 µA, IB = 0
Collector-base breakdown voltage
V(BR)CBO
50
-
-
I CBO
-
-
100
nA
I EBO
-
-
350
µA
h FE
50
-
-
-
-
-
0.3
V
Vi(off)
0.8
-
1.5
Vi(on)
1
-
2.5
Input resistor
R1
15
22
29
kΩ
Resistor ratio
R1/R 2
0.9
1
1.1
-
fT
-
130
-
MHz
Ccb
-
3
-
pF
IC = 10 µA, IE = 0
Collector-base cutoff current
VCB = 40 V, IE = 0
Emitter-base cutoff current
VEB = 10 V, IC = 0
DC current gain1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
VCEsat
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on voltage
IC = 2 mA, VCE = 0.3 V
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
1Pulse
test: t < 300µs; D < 2%
3
2010-06-07
BCR141...
DC current gain hFE = ƒ(IC)
VCE = 5 V (common emitter configuration)
Collector-emitter saturation voltage
VCEsat = ƒ(IC), IC/IB = 20
10 3
1
V
V CEsat
h FE
0.8
10 2
0.7
0.6
-40 °C
-25 °C
25 °C
85 °C
125 °C
0.5
0.4
10
1
-40 °C
-25 °C
25 °C
85 °C
125 °C
0.3
0.2
0.1
10 0 -4
10
10
-3
10
-2
A
10
0 -3
10
-1
10
-2
A
IC
-1
10 1
-40 °C
-25 °C
25 °C
85 °C
125 °C
V
Vi(off)
Vi(on)
10
Input off voltage V i(off) = ƒ(IC)
VCE = 5V (common emitter voltage)
10 2
10 1
-1
IC
Input on Voltage Vi(on) = ƒ(IC )
VCE = 0.3V (common emitter voltage)
V
10
-40 °C
-25 °C
25 °C
85 °C
125 °C
10 0
10 0
10 -1 -5
10
10
-4
10
-3
10
-2
A
10
10 -1 -5
10
-1
IC
10
-4
10
-3
10
-2
A
IC
4
2010-06-07
BCR141...
Total power dissipation Ptot = ƒ(TS)
BCR141
Total power dissipation Ptot = ƒ(TS)
BCR141S
300
300
mW
250
250
225
225
200
200
P tot
P tot
mW
175
175
150
150
125
125
100
100
75
75
50
50
25
25
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
15
30
45
60
90 105 120 °C
75
TS
150
TS
Total power dissipation Ptot = ƒ(TS)
BCR141W
Permissible Pulse Load RthJS = ƒ(t p)
BCR141
10 3
300
mW
K/W
250
10 2
RthJS
Ptot
225
200
175
10 1
150
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
125
100
10 0
75
50
25
0
0
15
30
45
60
75
90 105 120 °C
10 -1 -6
10
150
TS
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
5
2010-06-07
BCR141...
Permissible Puls Load R thJS = ƒ (tp)
BCR141S
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
BCR141
10 3
10 3
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
RthJS
P totmax / P totDC
K/W
-
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 -1 -6
10
0
10
-5
10
-4
10
-3
10
-2
tp
s
10
0
10
0
tp
Permissible Puls Load R thJS = ƒ (tp)
BCR141W
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
BCR141S
10 3
10 3
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
RthJS
Ptotmax / PtotDC
K/W
-
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 -1 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
tp
6
2010-06-07
BCR141...
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
BCR141W
P totmax / P totDC
10 3
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
7
2010-06-07
Package SOT23
BCR141...
0.4 +0.1
-0.05
1)
2
0.08...0.1
C
0.95
1.3 ±0.1
1
2.4 ±0.15
3
0.1 MAX.
10˚ MAX.
B
1 ±0.1
10˚ MAX.
2.9 ±0.1
0.15 MIN.
Package Outline
A
5
0...8˚
1.9
0.2
0.25 M B C
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
1.3
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
2005, June
Date code (YM)
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
8
2.13
2.65
0.9
Pin 1
1.15
3.15
8
2010-06-07
Package SOT323
BCR141...
Package Outline
0.9 ±0.1
2 ±0.2
0.3 +0.1
-0.05
0.1 MAX.
3x
0.1
M
0.1
A
1
2
1.25 ±0.1
0.1 MIN.
2.1 ±0.1
3
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
0.8
1.6
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
2.3
8
4
Pin 1
2.15
1.1
9
2010-06-07
Package SOT363
BCR141...
Package Outline
2 ±0.2
0.9 ±0.1
+0.1
6x
0.2 -0.05
0.1
0.1 MAX.
M
0.1
Pin 1
marking
1
2
3
A
1.25 ±0.1
4
0.1 MIN.
5
2.1 ±0.1
6
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
1.6
0.9 0.7
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
0.2
2.3
8
4
Pin 1
marking
1.1
2.15
10
2010-06-07
BCR141...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office ( <www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
11
2010-06-07
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