FJAF6810 FJAF6810 High Voltage Color Display Horizontal Deflection Output • High Collector-Base Breakdown Voltage : BVCBO = 1500V • High Switching Speed : tF(typ.) =0.1µs • For Color Monitor TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Rating 1500 Units V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 750 V 6 IC Collector Current (DC) 10 V A ICP* Collector Current (Pulse) 20 A PC Collector Dissipation 60 W TJ Junction Temperature 150 °C TSTG Storage Temperature -55 ~ 150 °C * Pulse Test: Pulse Width=5ms, Duty Cycle < 10% Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Conditions VCB=1400V, RBE=0 Min Typ Max 1 Units mA ICBO Collector Cut-off Current VCB=800V, IE=0 10 µA IEBO Emitter Cut-off Current VEB=4V, IC=0 1 mA BVEBO Emitter-Base Breakdown Voltage IE=500µA, IC=0 6 hFE1 hFE2 DC Current Gain VCE=5V, IC=1A VCE=5V, IC=6A 10 5 VCE(sat) Collector-Emitter Saturation Voltage IC=6A, IB=1.5A 3 VBE(sat) Base-Emitter Saturation Voltage IC=6A, IB=1.5A 1.5 V tSTG* Storage Time 3 µs tF* Fall Time VCC=200V, IC=6A, RL=33Ω IB1=1.2A, IB2= - 2.4A 0.2 µs V 8 V * Pulse Test: PW=20µs, duty Cycle=1% Pulsed Thermal Characteristics TC=25°C unless otherwise noted Symbol RθjC Parameter Thermal Resistance, Junction to Case ©2001 Fairchild Semiconductor Corporation Typ Max 2.08 Units °C/W Rev. A2, May 2001 FJAF6810 Typical Characteristics 10 100 VCE = 5V 8 0 Ta = 125 C hFE, DC CURRENT GAIN IC [A], COLLECTOR CURRENT IB=2.0A 6 IB=0.6A IB=0.4A 4 IB=0.2A 2 0 0 2 4 6 8 10 12 0 Ta = - 25 C 10 1 0.1 14 VCE [V], COLLECTOR-EMITTER VOLTAGE 1 10 Figure 2. DC current Gain 10 100 VCE(sat) [V], SATURATION VOLTAGE IC = 5 IB 10 1 0 Ta = 125 C 0 Ta = 25 C 0 Ta = - 25 C 0.1 0.01 0.1 1 IC = 3 IB 1 0 Ta = 25 C 0 Ta = 125 C 0.1 0 Ta = - 25 C 0.01 0.1 10 IC [A], COLLECTOR CURRENT 1 10 IC [A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector-Emitter Saturation Voltage 14 10 VCE = 5V VCC = 200V, IC = 6A, IB1 = 1.2A tSTG & tF[µs], SWITCHING TIME 12 IC [A], COLLECTOR CURRENT 100 IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic VCE(sat) [V], SATURATION VOLTAGE 0 Ta = 25 C 10 8 6 4 0 Ta = 125 C 0 25 C 0 - 25 C 2 0 0.0 tSTG 1 tF 0.1 0.01 0.2 0.4 0.6 0.8 1.0 VBE [V], BASE-EMITTER VOLTAGE Figure 5. Base-Emitter On Voltage ©2001 Fairchild Semiconductor Corporation 1.2 1 10 IB2 [A], REVERSE BASE CURRENT Figure 6. Resistive Load Switching Time Rev. A2, May 2001 FJAF6810 Typical Characteristics (Continued) 100 10 VCC = 200V, IB1 = 1.0A, IB2 = - 2.4A tSTG & tF [µs], SWITCHING TIME tSTG & tF[µ s], SWITCHING TIME VCC = 200V, IC = 6A, IB2 = - 2.4A 10 tSTG 1 tF 0.1 0.01 tSTG 1 tF 0.1 1 10 1 IC [A], COLLECTOR CURRENT IB1 [A], FORWARD BASE CURRENT Figure 7. Resistive Load Switching Time Figure 8. Resistive Load Switching Time 100 30 RB2 = 0, IB1 = 15A VCC = 30V, L = 200µ H IC (Pulse) t = 100ms t = 10ms IC [A], COLLECTOR CURRENT 25 IC [A], COLLECTOR CURRENT 10 20 15 10 VBE(off) = - 6V 5 10 IC (DC) t = 1ms 1 0.1 o TC = 25 C Sigle Pulse VBE(off) = - 3V 0.01 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE 1 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 9. Reverse Bias Safe Operating Area Figure 10. Forward Bias Safe Operating Area 80 PD [W], POWER DISSIPATION 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 200 C o T [ C], CASE TEMPERATURE Figure 11. Power Derating ©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001 FJAF6810 Package Demensions TO-3PF 4.50 ±0.20 5.50 ±0.20 15.50 ±0.20 2.00 ±0.20 ° 22.00 ±0.20 23.00 ±0.20 10 1.50 ±0.20 16.50 ±0.20 2.50 ±0.20 14.50 ±0.20 0.85 ±0.03 2.00 ±0.20 16.50 ±0.20 2.00 ±0.20 4.00 ±0.20 3.30 ±0.20 +0.20 0.75 –0.10 2.00 ±0.20 3.30 ±0.20 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] +0.20 0.90 –0.10 5.50 ±0.20 26.50 ±0.20 10.00 ±0.20 (1.50) 2.00 ±0.20 2.00 ±0.20 14.80 ±0.20 3.00 ±0.20 ø3.60 ±0.20 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. A2, May 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DenseTrench™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ FRFET™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ LittleFET™ MicroFET™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SLIENT SWITCHER® SMART START™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H2