Fairchild MPSA12 Npn darlington transistor Datasheet

MPSA12
MPSA12
NPN Darlington Transistor
• This device is designed for applications requiring extremely high
current gain at currents to 1.0A.
• Sourced from process 05.
• See MPSA14 for characteristics.
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
VCES
Parameter
Collector-Emitter Voltage
Value
20
Units
V
VCBO
VEBO
Collector-Base Voltage
20
V
Emitter-Base Voltage
10
IC
Collector Current
V
1.2
A
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
- Continuous
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Off Characteristics
Parameter
Test Condition
Min.
Typ.
Max.
Units
100
nA
V(BR)CES
Collector-Emitter Breakdown Voltage
IC = 100µA, IE = 0
ICBO
Collector Cutoff Current
VCB = 15V, IE = 0
20
V
ICES
Emitter Cutoff Current
VCB = 15V, IC = 0
100
nA
IEBO
Emitter Cutoff Current
VEB = 10V, IC = 0
100
nA
On Characteristics *
hFE
DC Current Gain
VCE = 5.0V, IC = 10mA
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 0.01mA
1.0
V
VBE(on)
Base-Emitter On Voltage
IC = 10mA, VCE = 5.0V
1.4
V
20,000
* Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%
Thermal Characteristics TA=25°C unless otherwise noted
Symbol
PD
Total Device Dissipation
Derate above 25°C
Parameter
Max.
625
5.0
Units
mW
mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
MPSA12
Package Dimensions
TO-92
+0.25
4.58 ±0.20
4.58 –0.15
±0.10
14.47 ±0.40
0.46
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
±0.20
(0.25)
+0.10
0.38 –0.05
1.02 ±0.10
3.86MAX
3.60
+0.10
0.38 –0.05
(R2.29)
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation
Rev. A2, November 2002
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Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
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First Production
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©2002 Fairchild Semiconductor Corporation
Rev. I1
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