Infineon IPI139N08N3G Optimos3 power-transistor Datasheet

IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
™
"%&$!"# 3 Power-Transistor
Product Summary
Features
0(
V 9H
Q #451<6? B8978 6B5AE5>3 I CG9D389
>7
R , ? >=1H, &
Q ( @D9=9J54 D53 8>? <? 7I 6? B 3 ? >F5BD5BC
J
)+&.
Y"
,-
I9
6
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Q
1F1<1>3 85 D5CD
54
Q) 2 6B55 @<1D
9>7 + ? " , 3 ? =@<91>D
Q* E1<96954 13 3 ? B49>7 D? $ )#
6? BD1B75D1@@<9
3 1D9? >C
Q" 1<? 75> 6B55 13 3 ? B49
>7 D? # Type
#) ) ' ' !
#) # ' ' !
#) '
' !
Package
E=%ID%**(%+
E=%ID%*.*%+
E=%ID%*.+%+
Marking
)+1C(0C
)+1C(0C
)+.C(0C
Maximum ratings, 1DT V T E><5CC ? D85BG9C5 C@53 9
6954
Parameter
Symbol Conditions
? >D
9>E? EC 4B
19> 3 EBB5>D
I9
Value
T 8 T
,-
T 8
+1
T
Unit
6
) E<C54 4B19> 3 EBB5>D*#
I 9$\aX_Q
T 8 T
)0(
F1<1>3 85 5>5B7I C9
>7<5 @E<C5+#
E 6H
I 9 R =H "
-(
Y@
!1D5 C? EB35 F? <D175
V =H
q*(
J
) ? G5B49CC9@1D9? >
P `[`
/1
K
( @5B1D9>7 1>4 CD? B175 D5=@5B1DEB5
T V T _`S
T 8 T
# 3 <9=1D
93 3 1D57? BI #' # T
)#
$ , - 1>4 $ , , 55 697EB
5 6? B=? B
5 45D
19<54 9
>6? B
=1D9? >
+#
, 55 697EB
5 6? B=? B
5 45D
19<54 9>6? B
=1D
9? >
*#
+ 5F @175
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
)&1
Thermal characteristics
-85B=1<B5C9
CD1>3 5 :E>3 D9
? > 3 1C5
R `T@8
-85B=1<B5C9
CD1>3 5
R `T@6
=9>9
=1<6? ? D@B9>D
3 = * 3 ? ? <9
>7 1B51,#
:E>3 D
9? > 1=2 9
5>D
A'K
%
%
,(
0(
%
%
Electrical characteristics, 1DT V T E><5CC ? D85BG9C5 C@53 96954
Static characteristics
B19> C? EB35 2 B51;4? G> F? <D175
V "7G#9HH V =H
. I 9
=
!1D5 D8B5C8? <4 F? <D175
V =H"`T#
V 9H4V =H I 9 V *
*&0
+&-
05B? 71D5 F? <D175 4B
19> 3 EBB5>D
I 9HH
V 9H . V =H
T V T
.
%
(&)
)
V 9H . V =H
T V T
.
%
)(
)((
.
%
)
)((
Z6
Y"
J
r6
!1D5 C? EB35 <51;175 3 EBB5>D
I =HH
V =H . V 9H
B19> C? EB35 ? > CD1D5 B5C9CD1>3 5
R 9H"[Z#
V =H
. I 9 %
))&0
)+&1
V =H . I 9 %
).&(
*.
V =H
. I 9 "HB9#
%
))&-
)+&.
V =H . I 9 "HB9#
%
).&(
*.&(
%
*
%
"
*,
,0
%
H
B19> C? EB35 ? > CD1D5 B5C9CD1>3 5
R 9H"[Z#
!1D5 B5C9CD
1>3 5
R=
I^MZ_O[ZPaO`MZOQ
g R_
,#
5F935 ? > == H == H == 5@? HI ) 3 ? >>53 D
9? > ) 9C F5B
D931<9> CD
9<<19B
+ 5F gV 9Hg5*gI 9gR 9H"[Z#YMd
I 9 + G9D8 3 =* ? >5 <1I5B
@175 V=D
893; 3 ? @@5B1B
51 6? B4B
19>
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
%
)+((
)/+(
%
+-+
,.1
Dynamic characteristics
#>@ED3 1@13 9D1>3 5
C U__
V =H . V 9H f & " J
.
( ED@ED3 1@13 9
D1>3 5
C [__
+ 5F5BC5 DB1>C65B3 1@13 9D1>3 5
C ^__
%
)-
%
-EB> ? > 45<1I D9=5
t P"[Z#
%
)*
%
+ 9C5 D9
=5
t^
%
+-
%
-EB> ? 6645<1I D9=5
t P"[RR#
%
)0
%
tR
%
-
%
!1D5 D? C? EB35 3 81B75
Q S_
%
/
%
!1D5 D? 4B19> 3 81B75
Q SP
%
,
%
%
0
%
1<<D9
=5
V 99 . V =H
.
I 9 R = "
\<
Z_
!1D5 81BS5 81B13 D5B9
CD
93C-#
V 99 . I 9 V =H D?
.
Z8
, G9D389
>7 3 81B75
Q _c
!1D5 3 81B75 D? D
1<
QS
%
)1
*-
!1D5 @<1D51E F? <D
175
V \XM`QMa
%
-&-
%
( ED@ED3 81B75
Q [__
%
*-
+,
Z8
%
%
,-
6
%
%
)0(
%
)&(
)&*
J
%
-(
%
Z_
%
/,
%
Z8
V 99 . V =H
.
J
Reverse Diode
9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB
5>D
IH
9? 45 @E<C5 3 EBB
5>D
I H$\aX_Q
9? 45 6? BG1B4 F? <D175
V H9
+ 5F5BC5 B53 ? F5BI D9
=5
t ^^
+ 5F5BC5 B53 ? F5BI 3 81B
75
Q ^^
-#
+ 5F T 8 T
V =H . I < T V T
V G . I <4I H
Pi <'Pt VC
, 55 697EB
5 6? B71D5 3 81B
75 @1B1=5D5B4569>9D
9? >
@175 IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
1 Power dissipation
2 Drain current
P `[`4R"T 8#
I 94R"T 8 V =H"
80
.
50
40
60
I D [A]
P tot [W]
30
40
20
20
10
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I 94R"V 9H T 8 T D 4(
Z `T@84R"t \#
@1B1=5D5B t \
@1B1=5D5B
D 4t \'T
103
101
<9=9D54 2 I ? > CD1D
5
^Q_U_`MZOQ
VC
10
2
100
(&-
Z thJC [K/W]
I D [A]
VC
VC
=C
101
(&*
(&)
(&((&(*
10-1
(&()
=C
C9>7<5 @E<C5
98
100
10
10-2
-1
10
0
10
1
10
2
V DS [V]
+ 5F 10-5
10-4
10-3
10-2
10-1
100
t p [s]
@175 IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I 94R"V 9H T V T
R 9H"[Z#4R"I 9 T V T
@1B
1=5D5B V =H
@1B1=5D5B
V =H
150
30
.
.
.
.
100
20
R DS(on) [m ]
.
I D [A]
.
.
.
.
50
.
.
.
10
.
.
.
0
0
0
1
2
3
4
5
0
40
80
V DS [V]
120
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I 94R"V =H K
V 9Hg5*gI 9gR 9H"[Z#YMd
g R_4R"I 9 T V T
@1B
1=5D5B T V
120
80
60
I D [A]
g fs [S]
80
40
40
20
T
T
0
0
0
2
4
6
8
+ 5F 0
20
40
60
80
100
I D [A]
V GS [V]
@175 IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9 V =H
V =H"`T#4R"T V V =H4V 9H
.
@1B1=5D5B
I9
30
4
25
3
V
V V GS(th) [V]
R DS(on) [m ]
20
YMd
15
`e\
2
10
1
5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
11 Typ. capacitances
C 4R"V 9H V =H
. f 100
140
180
T j [°C]
T j [°C]
12 Forward characteristics of reverse diode
& " J
I <4R"V H9#
@1B1=5D5B
TV
104
103
8U__
103
8[__
102
T I F [A]
C [pF]
T
T
102
8^__
101
T 101
100
100
0
20
40
60
80
V DS [V]
+ 5F 0
0.5
1
1.5
2
2.5
V SD [V]
@175 IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
13 Avalanche characteristics
14 Typ. gate charge
I 6H4R"t 6J R =H "
V =H4R"Q SM`Q I 9 @E<C54
@1B
1=5D5B T V"_`M^`#
@1B1=5D5B
V 99
100
12
.
10
.
8
V GS [V]
I AV [A]
T
T
10
T
.
6
4
2
1
0
0.1
1
10
100
1000
0
5
t AV [µs]
15 Drain-source breakdown voltage
V 7G"9HH#4R"T V I 9
10
15
20
Q gate [nC]
16 Gate charge waveforms
=
90
V =H
Qg
85
V BR(DSS) [V]
80
75
V S _"`T#
70
65
Q S "`T#
Q _c
Q S_
60
-60
-20
20
60
100
140
Q g ate
Q SP
180
T j [°C]
+ 5F @175 IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
PG-TO-263-3 (D²-Pak)
+ 5F @175 IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
PG-TO-262-3 (I²-Pak)
+ 5F @175 IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
PG-TO-220-3
+ 5F @175
IPP139N08N3 G IPI139N08N3 G
IPB136N08N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
+ 5F @175
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